Renesas HAT2173H-EL-E

Overview

HAT2173H-EL-E from Renesas Electronics is a silicon N-channel power MOSFET designed for high-efficiency DC-DC conversion and motor drive switching applications, featuring 100 V V_DSS, 12 mΩ typical R_DS(on) at V_GS = 10 V, and 25 A continuous drain current - optimized for compact, high-current load switching in industrial power supplies and automotive body electronics.

For engineers reviewing the HAT2173H-EL-E datasheet, HAT2173H-EL-E pinout, HAT2173H-EL-E application, or HAT2173H-EL-E equivalent, key selection criteria include gate drive compatibility with 8 V logic-level control, low Q_g (61 nC) for fast switching, and LFPAK package thermal performance (θ_ch-C = 4.17 °C/W) in space-constrained PCB layouts.

Technical Context

This MOSFET employs a trench-gate process to achieve low on-resistance and high cell density in the LFPAK (PTZZ0005DA-A) package. Its 100 V breakdown voltage supports 48 V system rails, while the 4.17 °C/W channel-to-case thermal resistance enables 30 W channel dissipation at T_c = 25 °C without forced cooling.

Switching behavior is characterized by 20 ns turn-on delay, 15 ns rise time, and 37 ns turn-off delay under standard test conditions (V_DD ≈ 30 V, R_g = 4.7 Ω), with body-diode reverse recovery time of 55 ns and forward voltage of 0.82 V at 25 A - critical for synchronous rectification and freewheeling path design.

Key Specifications

Pinout & Package

The HAT2173H-EL-E is housed in the LFPAK (RENESAS code PTZZ0005DA-A), a surface-mount, copper-clip package with exposed drain pad for enhanced thermal and electrical performance. Dimensions: 4.9 × 3.95 × 1.3 mm (L × W × H), mass: 0.080 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar power switching applications.

Compared with IPB017N10N3 G and SIHL2173E, the HAT2173H-EL-E uniquely combines 25 A continuous rating, 100 V breakdown, LFPAK thermal efficiency, and guaranteed avalanche capability - making it the preferred choice for space-constrained, thermally demanding industrial and automotive power switches where reliability under transient stress is essential.

Availability

HAT2173H-EL-E is available at Aetrix Electronics and suitable for industrial motor drives, automotive body control modules, and server ORing circuits requiring stable component supply, long-term production continuity, and RoHS-compliant packaging.

Supply support for HAT2173H-EL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and infrastructure markets.

The HAT2173H-EL-E belongs to Renesas' high-density power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in space-constrained 12–48 V power systems where thermal performance and transient robustness are critical.

FAQ

What is the maximum continuous drain current rating for the HAT2173H-EL-E?

The HAT2173H-EL-E is rated for 25 A continuous drain current (I_D) at T_c = 25 °C. This rating assumes proper PCB copper pour and thermal management per the LFPAK package's 4.17 °C/W channel-to-case thermal resistance. At elevated case temperatures, derating applies - for example, ~18 A at T_c = 75 °C per the Power vs. Temperature Derating curve in the datasheet. The HAT2173H-EL-E must not exceed its absolute maximum channel temperature of 150 °C.

Does the HAT2173H-EL-E support 5 V logic-level gate drive?

No - the HAT2173H-EL-E requires a minimum V_GS of 4.0 V to begin turning on and achieves full enhancement at V_GS = 8–10 V. While it conducts partially at 5 V, its R_DS(on) rises significantly (17.5 mΩ max at V_GS = 8 V vs. 15 mΩ max at V_GS = 10 V), increasing conduction loss. For reliable 5 V MCU interfacing, a gate driver or level shifter is recommended. The HAT2173H-EL-E is explicitly characterized for 8 V gate drive capability per its Features list.

What is the avalanche energy rating of the HAT2173H-EL-E and how is it tested?

The HAT2173H-EL-E is rated for 62.5 mJ repetitive avalanche energy (E_AR) at T_ch = 25 °C with R_g ≥ 50 Ω and pulse width ≤ 10 µs. This is measured using the standardized avalanche test circuit shown on page 5 of the datasheet, where inductive energy is dumped into the device via controlled V_DD and L. The HAT2173H-EL-E's 25 A avalanche current (I_AP) and defined E_AR confirm its suitability for inductive load switching without external snubbers in automotive and industrial applications.

How does the LFPAK package of the HAT2173H-EL-E improve thermal performance compared to SO-8?

The LFPAK package used by the HAT2173H-EL-E features a copper-clip construction with an exposed drain pad directly soldered to PCB copper, achieving a channel-to-case thermal resistance (θ_ch-C) of 4.17 °C/W - over 3× better than typical SO-8 packages (~15–20 °C/W). This allows the HAT2173H-EL-E to dissipate 30 W at T_c = 25 °C, whereas an SO-8 MOSFET with similar R_DS(on) would require large heatsinks or active cooling. The LFPAK's 4.9 × 3.95 mm footprint also saves ~35% board area versus SO-8.

Is the HAT2173H-EL-E suitable for synchronous rectification in DC-DC converters?

Yes - the HAT2173H-EL-E is well-suited for synchronous rectification due to its low R_DS(on) (12 mΩ typ.), fast switching (t_r = 15 ns, t_f = 5.7 ns), and low Q_g (61 nC), which minimize both conduction and switching losses. Its body diode has t_rr = 55 ns and V_DF = 0.82 V at 25 A, enabling efficient freewheeling before synchronous gate turn-on. When used in a 24 V → 5 V forward converter, the HAT2173H-EL-E can improve efficiency by 2–4% over Schottky diodes, especially at >5 A loads.