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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas HAT2197R-EL-E

Name: HAT2197R-EL-E
Brand: Renesas
SKU: HAT2197R-EL-E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: HAT2197R-EL-E

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: HAT2197R-EL-E.pdf

Description:: MOSFET N-CH 30V 16A 8SOP

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Product details

Overview

HAT2197R-EL-E from Renesas Electronics is a silicon N-channel power MOSFET designed for high-efficiency, high-speed power switching in DC-DC converters and motor drivers. It delivers 5.3 mΩ typical R_DS(on) at V_GS = 10 V, supports 4.5 V gate drive, and handles 16 A continuous drain current in SOP-8 package.

For engineers reviewing the HAT2197R-EL-E datasheet, HAT2197R-EL-E pinout, HAT2197R-EL-E application, or HAT2197R-EL-E equivalent, key selection criteria include low on-resistance at logic-level gate drive, fast switching (t_d(on) = 10 ns, t_f = 4.2 ns), body diode recovery time (t_rr = 30 ns), thermal performance on FR4 board, and avalanche ruggedness (E_AR = 25.6 mJ).

Technical Context

This MOSFET uses planar trench-gate silicon process optimized for low R_DS(on) and fast switching trade-off. Its gate threshold voltage range (1.0–2.5 V) ensures reliable turn-on with 4.5 V logic drivers while maintaining noise immunity. The integrated body diode exhibits low forward voltage (V_DF = 0.80 V typ.) and controlled reverse recovery (t_rr = 30 ns), supporting synchronous rectification and flyback topologies.

The device is rated for 30 V V_DSS, ±20 V V_GSS, and operates up to 150 °C channel temperature. Thermal impedance θ_ch-a = 50 °C/W is specified on a standard 40 × 40 × 1.6 mm FR4 board - enabling compact, convection-cooled designs without heatsinks in moderate-power applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Maximum blocking voltage in high-side switch or half-bridge leg without breakdown risk.
R_DS(on) @ V_GS = 10 V	5.3 mΩ typ. - Enables <1 W conduction loss at 16 A, critical for >90% efficiency in 12 V input converters.
R_DS(on) @ V_GS = 4.5 V	6.8 mΩ typ. - Confirmed logic-level compatibility with 3.3 V/5 V microcontrollers and gate drivers.
Q_g	18 nC - Low total gate charge reduces driver power and enables >1 MHz switching with modest gate resistance.
t_rr	30 ns - Fast body diode recovery minimizes shoot-through risk and switching losses in synchronous buck stages.
E_AR	25.6 mJ - Avalanche energy rating supports robust operation during inductive load switching transients.
P_ch	2.5 W - Channel dissipation limit on FR4 board defines safe continuous power envelope at ambient temperatures ≤70 °C.

Pinout & Package

Package: SOP-8 (P-SOP8-3.95 × 4.9-1.27, JEITA code FP-8DAV, Renesas code PRSP0008DD-D), surface-mount, Ni/Pd/Au-plated terminals.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source	Common source node for internal parallel FET cells; connects directly to PCB ground plane for low-inductance return path.
4	Gate	Control terminal requiring <18 nC charge; layout must minimize trace inductance to prevent oscillation and overshoot.
5, 6, 7, 8	Drain	High-current output node; pins 5–8 are internally bonded together to share 16 A load and reduce thermal resistance.

Key Features

Feature	Design Value
Logic-level gate drive support	Guaranteed turn-on at V_GS = 4.5 V enables direct interface with 3.3 V/5 V MCUs without level-shifting circuitry.
Low R_DS(on) × Q_g figure of merit	~95 mΩ·nC - balances conduction and switching losses for optimal efficiency in 300 kHz–2 MHz SMPS designs.
Fast body diode with soft recovery	t_rr = 30 ns and low Q_rr reduce EMI and voltage spikes during freewheeling in buck and flyback converters.
High-density mounting capability	SOP-8 footprint allows >2× higher power density than TO-252 packages, easing layout in space-constrained industrial modules.
Avalanche-rated operation	Rated for repetitive unclamped inductive switching (I_AP = 16 A, E_AR = 25.6 mJ) - eliminates need for external snubbers in relay/motor drive circuits.

Applications

DC-DC Converter Power Stage	Brushed DC Motor Driver
Use Scenario: High-efficiency 12 V input, 5 V/10 A output synchronous buck converter in industrial PLC power supply. IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET, switched at 500 kHz with precise dead-time control. Use Value: 5.3 mΩ R_DS(on) cuts conduction loss by 40% vs. comparable 8 mΩ devices, raising full-load efficiency from 92% to 94.5%.	Use Scenario: H-bridge driver for 24 V, 8 A brushed DC motor in automated valve actuator. IC Role / Device Role / Timing Role: High-current quadrant-switching transistor handling bidirectional current and inductive kickback. Use Value: 25.6 mJ avalanche energy rating absorbs back-EMF spikes during rapid PWM reversal, eliminating external TVS diodes.
USB-C PD Power Path	Hot-Swap Controller Load Switch
Use Scenario: 20 V input path switch in USB-C Power Delivery adapter with programmable voltage negotiation. IC Role / Device Role / Timing Role: Input-side power switch enabling/disabling 20 V rail based on CC logic signals. Use Value: 4.5 V gate drive compatibility allows direct control from USB-PD controller GPIOs, reducing BOM count by one level-shifter IC.	Use Scenario: Inrush-limited 12 V load switch for FPGA carrier board with hot-plug capability. IC Role / Device Role / Timing Role: Main pass element controlled by dedicated load switch IC with soft-start timing. Use Value: Low 6.8 mΩ R_DS(on) at 4.5 V gate drive ensures <100 mV drop at 15 A, meeting tight voltage regulation specs during startup.

DC-DC Converter Power Stage

Brushed DC Motor Driver

Use Scenario: High-efficiency 12 V input, 5 V/10 A output synchronous buck converter in industrial PLC power supply.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET, switched at 500 kHz with precise dead-time control.

Use Value: 5.3 mΩ R_DS(on) cuts conduction loss by 40% vs. comparable 8 mΩ devices, raising full-load efficiency from 92% to 94.5%.

Use Scenario: H-bridge driver for 24 V, 8 A brushed DC motor in automated valve actuator.

IC Role / Device Role / Timing Role: High-current quadrant-switching transistor handling bidirectional current and inductive kickback.

Use Value: 25.6 mJ avalanche energy rating absorbs back-EMF spikes during rapid PWM reversal, eliminating external TVS diodes.

USB-C PD Power Path

Hot-Swap Controller Load Switch

Use Scenario: 20 V input path switch in USB-C Power Delivery adapter with programmable voltage negotiation.

IC Role / Device Role / Timing Role: Input-side power switch enabling/disabling 20 V rail based on CC logic signals.

Use Value: 4.5 V gate drive compatibility allows direct control from USB-PD controller GPIOs, reducing BOM count by one level-shifter IC.

Use Scenario: Inrush-limited 12 V load switch for FPGA carrier board with hot-plug capability.

IC Role / Device Role / Timing Role: Main pass element controlled by dedicated load switch IC with soft-start timing.

Use Value: Low 6.8 mΩ R_DS(on) at 4.5 V gate drive ensures <100 mV drop at 15 A, meeting tight voltage regulation specs during startup.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ROHM RQ3E080DDT	R_DS(on) = 6.0 mΩ @ 10 V; Q_g = 15.5 nC; SOP-8; V_DSS = 30 V	Lower gate charge improves high-frequency switching but slightly higher conduction loss.	Prefer when operating >1 MHz or minimizing driver losses is prioritized over peak efficiency at 500 kHz.
ON Semiconductor NTMFS4C09NT1G	R_DS(on) = 5.0 mΩ @ 10 V; Q_g = 22 nC; SO-8FL; V_DSS = 30 V; enhanced thermal pad	SO-8FL package offers lower θ_JA (40 °C/W vs. 50 °C/W) but requires different footprint and solder stencil.	Choose when thermal headroom is constrained and PCB re-layout for thermal pad is feasible.

Compared with RQ3E080DDT and NTMFS4C09NT1G, the HAT2197R-EL-E provides the best balance of low R_DS(on) at 4.5 V gate drive, fast switching, and proven avalanche ruggedness - making it ideal for cost-sensitive, reliability-critical industrial power stages where gate drive voltage margin and transient robustness are non-negotiable.

Availability

HAT2197R-EL-E is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, and USB-C power delivery systems requiring stable component supply across multi-year production cycles.

Supply support for HAT2197R-EL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.

The HAT2197R-EL-E belongs to Renesas' high-performance power MOSFET family targeting logic-level-driven, high-density power conversion - engineered specifically for efficiency-critical, thermally constrained applications in factory automation and embedded power supplies.

FAQ

What is the maximum continuous drain current rating for HAT2197R-EL-E at 25°C ambient?

The HAT2197R-EL-E is rated for 16 A continuous drain current (I_D) at T_a = 25°C, measured under conditions defined in the Absolute Maximum Ratings table. This assumes use on a standard FR4 board (40 × 40 × 1.6 mm) with P_ch derating applied above 25°C ambient per the power vs. temperature curve on page 3 of the datasheet. At 70°C ambient, the usable I_D drops to approximately 11 A.

Does HAT2197R-EL-E support 3.3 V logic-level gate drive?

The HAT2197R-EL-E is specified for operation down to 4.5 V gate drive, with guaranteed R_DS(on) = 6.8 mΩ typ. at V_GS = 4.5 V. While its V_GS(off) range (1.0–2.5 V) suggests potential turn-on at 3.3 V, the datasheet does not characterize performance below 4.5 V. Therefore, HAT2197R-EL-E is not recommended for reliable 3.3 V-only gate drive without validation of actual R_DS(on) and switching behavior in the target application.

What is the thermal resistance from channel to ambient for HAT2197R-EL-E?

The channel-to-ambient thermal impedance (θ_ch-a) for HAT2197R-EL-E is 50 °C/W, measured on a glass epoxy board (FR4, 40 × 40 × 1.6 mm) under pulsed conditions (PW ≤ 10 s). This value reflects real-world PCB-level thermal performance - not junction-to-case - and is used to calculate maximum allowable power dissipation at a given ambient temperature using the derating curve on page 3 of the datasheet.

Is HAT2197R-EL-E suitable for avalanche operation?

Yes, the HAT2197R-EL-E is explicitly rated for repetitive avalanche operation: I_AP = 16 A and E_AR = 25.6 mJ at T_ch = 25°C with R_g ≥ 50 Ω. These values are validated per the test circuit on page 6 and support unclamped inductive switching in motor drive and relay control applications without external protection components.

What is the body diode forward voltage of HAT2197R-EL-E at 16 A?

The body-drain diode forward voltage (V_DF) of the HAT2197R-EL-E is 0.80 V typical and 1.04 V maximum at I_F = 16 A and V_GS = 0 V, as specified in the Electrical Characteristics table on page 2. This low V_DF contributes to reduced freewheeling losses in asynchronous topologies and supports efficient synchronous rectification when paired with complementary high-side control.

HAT2197R-EL-E Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 16A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.7mOhm @ 8A, 10V

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: 18 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2650 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOP

HAT2197R-EL-E FAQ

1.How can I place an order for HAT2197R-EL-E through Aetrix?

Please submit a Request for Quotation (RFQ) for HAT2197R-EL-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for HAT2197R-EL-E reliable?

The price and inventory of HAT2197R-EL-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HAT2197R-EL-E is usually 5 days.

3.What payment methods are accepted for HAT2197R-EL-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HAT2197R-EL-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for HAT2197R-EL-E?

HAT2197R-EL-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your HAT2197R-EL-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for HAT2197R-EL-E?

For technical support, including HAT2197R-EL-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HAT2197R-EL-E requirements.

6.How does Aetrix verify that HAT2197R-EL-E is sourced from the original manufacturer or authorized distributors?

All HAT2197R-EL-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HAT2197R-EL-E meets industry standards.

7.What is the process for return or replacement of HAT2197R-EL-E?

All HAT2197R-EL-E units undergo pre-shipment inspection (PSI). If there is an issue with HAT2197R-EL-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The HAT2197R-EL-E part is unused and in its original packaging.

Return procedure for HAT2197R-EL-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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