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Renesas HAT2201WP-EL-E
- Part No.:
- HAT2201WP-EL-E
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerWDFN
- Datasheet:
-
HAT2201WP-EL-E.pdf
- Description:
- 15A, 100V, N-CHANNEL MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:2,500
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Product details
Overview
HAT2201WP-EL-E from Renesas Electronics is a silicon N-channel power MOSFET designed for high-efficiency DC-DC converters and motor drive switching applications, featuring 100 V VDSS, 34 mΩ RDS(on) at VGS = 10 V, and 15 A continuous drain current at Tc = 25°C.
For engineers reviewing the HAT2201WP-EL-E datasheet, HAT2201WP-EL-E pinout, HAT2201WP-EL-E application, or HAT2201WP-EL-E equivalent, this device supports 8 V gate drive compatibility, low on-resistance switching in compact WPAK packaging, and avalanche-rated operation for robust power stage design.
Technical Context
The HAT2201WP-EL-E employs a trench-gate vertical DMOS structure optimized for low conduction loss and fast switching. Its 1450 pF Ciss, 65 pF Crss, and 21 nC total gate charge enable efficient gate driving with standard logic-level controllers.
It integrates a body diode with 0.84 V forward voltage at 15 A and 45 ns reverse recovery time, supporting synchronous rectification and freewheeling in buck and half-bridge topologies without external diode addition.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100 V - supports input rails up to 48 V nominal systems with margin for transients |
| RDS(on) | 34 mΩ typ. at VGS = 10 V - enables ≤1.9 W conduction loss at 7.5 A continuous current |
| ID | 15 A - rated for sustained load current in motor gate drivers and DC-DC high-side switches |
| Qg | 21 nC - determines gate driver power requirement and switching speed trade-off |
| Ciss | 1450 pF - impacts Miller effect and EMI behavior during hard-switching transitions |
| tr/tf | 3 ns / 4.1 ns - supports >1 MHz switching frequencies with controlled dV/dt |
| θch-c | 8.33 °C/W - defines thermal path from channel to case, critical for heatsink sizing |
Pinout & Package
Package: WPAK (RENESAS code PWSN0008DA-A), surface-mount, thermally enhanced leadframe with exposed drain pad. Dimensions: 5.9 mm × 4.21 mm × 0.8 mm max, mass 0.075 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source | Common source connection; electrically tied to PCB ground plane for low-inductance return path |
| 4 | Gate | Control terminal; requires <±20 V rating and 0.9 Ω internal gate resistance |
| 5, 6, 7, 8 | Drain | High-current output node; internally connected to exposed die-pad for thermal and electrical conduction |
Key Features
| Feature | Design Value |
|---|---|
| 8 V gate drive capability | Operates fully enhanced with 8 V gate bias-compatible with 3.3 V/5 V logic-level drivers via simple level-shifting |
| Low RDS(on) | 34 mΩ typ. minimizes I²R losses in high-current paths, reducing thermal stress in space-constrained layouts |
| Avalanche rated | 22.5 mJ single-pulse energy rating enables reliable operation under inductive switching stress without snubbers |
| High-density mounting | WPAK package provides 30% smaller footprint than SO-8 while delivering superior thermal performance (θch-c = 8.33 °C/W) |
| Body diode integration | 0.84 V VDF and 45 ns trr support bidirectional current handling in H-bridge and flyback configurations |
Applications
| DC-DC Buck Converter | Brushed DC Motor Driver |
|---|---|
Use Scenario: High-efficiency 12 V to 5 V/3.3 V point-of-load conversion in industrial PLC modules. IC Role / Device Role / Timing Role: High-side synchronous switch in fixed-frequency PWM-controlled buck regulator. Use Value: 34 mΩ RDS(on) reduces conduction loss by >40% vs. legacy SO-8 MOSFETs, enabling higher power density without forced air cooling. | Use Scenario: Bidirectional 24 V brushed motor control in automated gate actuators. IC Role / Device Role / Timing Role: Low-side switching element in half-H-bridge configuration with integrated body diode freewheeling. Use Value: 45 ns trr and 0.84 V VDF minimize switching loss and heat generation during direction reversal and braking cycles. |
| LED Constant-Current Driver | Power Supply OR-ing Circuit |
Use Scenario: Dimmable 48 V LED string driver for commercial lighting fixtures. IC Role / Device Role / Timing Role: PWM-controlled current sink switch operating at 1–5 kHz with precise duty-cycle regulation. Use Value: Low gate charge (21 nC) allows clean, jitter-free PWM edge control using microcontroller GPIOs without dedicated gate drivers. | Use Scenario: Redundant 24 V power input selection in telecom shelf power distribution units. IC Role / Device Role / Timing Role: Active OR-ing FET replacing Schottky diodes to reduce forward drop and improve efficiency. Use Value: 100 V VDSS and ±20 V VGSS rating ensure safe blocking of reverse voltage during hot-swap events and supply fault isolation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPB034N10N3 G | RDS(on) = 3.4 mΩ lower (30.6 mΩ), higher Qg (32 nC), TO-263-7 package | Better conduction loss but slower switching; requires larger PCB area and more gate drive power | Prefer when thermal headroom is limited and switching frequency ≤500 kHz |
| STP16NF10 | RDS(on) = 45 mΩ higher (79 mΩ), TO-220 package, no avalanche rating | Higher conduction loss and no transient energy rating; unsuitable for inductive loads without external protection | Only consider for cost-sensitive, low-frequency (<100 kHz), non-avalanche-critical linear-regulator replacement |
Compared with IPB034N10N3 G and STP16NF10, the HAT2201WP-EL-E delivers optimal balance of low RDS(on), fast switching, compact WPAK footprint, and guaranteed avalanche ruggedness-making it ideal for space-constrained, high-reliability 100 V power stages.
Availability
HAT2201WP-EL-E is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, LED drivers, and OR-ing circuits requiring stable component supply, full tape-and-reel logistics, and long-term industrial lifecycle support.
Supply support for HAT2201WP-EL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.
The HAT2201WP-EL-E belongs to Renesas' high-performance power MOSFET product line, engineered for high-efficiency, high-reliability switching in compact industrial power supplies and motor control systems.
FAQ
What is the maximum gate-to-source voltage rating for the HAT2201WP-EL-E?
The HAT2201WP-EL-E has a maximum gate-to-source voltage rating of ±20 V, as specified in its Absolute Maximum Ratings table. Exceeding this limit risks permanent gate oxide damage. Designers must ensure gate drive circuits include clamping or limiting to stay within this range, especially during transient conditions or level-shifting operations. The HAT2201WP-EL-E datasheet confirms this value applies across the full operating temperature range.
Does the HAT2201WP-EL-E support logic-level gate drive?
Yes, the HAT2201WP-EL-E supports logic-level gate drive down to 8 V, with typical RDS(on) of 35 mΩ at VGS = 8 V. Its gate threshold voltage (VGS(off)) ranges from 3.5 V to 5.0 V, ensuring full enhancement with standard 5 V or 3.3 V logic outputs when used with appropriate gate resistors. This capability is explicitly verified in the Electrical Characteristics table of the HAT2201WP-EL-E datasheet.
What is the thermal resistance from channel to case for the HAT2201WP-EL-E?
The channel-to-case thermal resistance (θch-c) of the HAT2201WP-EL-E is 8.33 °C/W at Tc = 25°C, as stated in the Absolute Maximum Ratings section. This value reflects the intrinsic thermal path through the WPAK package's copper leadframe and exposed drain pad. It is used to calculate junction temperature rise above case temperature and must be combined with heatsink thermal resistance for system-level thermal design of the HAT2201WP-EL-E.
Is the HAT2201WP-EL-E avalanche-rated, and what is its energy rating?
Yes, the HAT2201WP-EL-E is avalanche-rated with a single-pulse repetitive avalanche energy (EAR) of 22.5 mJ at Tch = 25°C and Rg ≥ 50 Ω. This rating is validated per the test circuit and conditions described in the datasheet (page 6). The HAT2201WP-EL-E can safely absorb inductive energy spikes without failure, making it suitable for relay driving, solenoid control, and other inductive load switching where voltage overshoot occurs.
What is the body diode forward voltage of the HAT2201WP-EL-E at rated current?
The body diode forward voltage (VDF) of the HAT2201WP-EL-E is 0.84 V typical at IF = 15 A and VGS = 0, as measured per the Electrical Characteristics table. This low forward drop reduces conduction loss during freewheeling phases in half-bridge and synchronous rectifier applications. The HAT2201WP-EL-E datasheet also specifies a maximum of 1.10 V under the same conditions, defining worst-case thermal and voltage margin.
HAT2201WP-EL-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 8-PowerWDFN
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 15A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 43mOhm @ 7.5A, 10V
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- 21 nC @ 10 V
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- 1450 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-WPAK
HAT2201WP-EL-E FAQ
1.How can I place an order for HAT2201WP-EL-E through Aetrix?
Please submit a Request for Quotation (RFQ) for HAT2201WP-EL-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HAT2201WP-EL-E reliable?
The price and inventory of HAT2201WP-EL-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HAT2201WP-EL-E is usually 5 days.
3.What payment methods are accepted for HAT2201WP-EL-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HAT2201WP-EL-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HAT2201WP-EL-E?
HAT2201WP-EL-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HAT2201WP-EL-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HAT2201WP-EL-E?
For technical support, including HAT2201WP-EL-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HAT2201WP-EL-E requirements.
6.How does Aetrix verify that HAT2201WP-EL-E is sourced from the original manufacturer or authorized distributors?
All HAT2201WP-EL-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HAT2201WP-EL-E meets industry standards.
7.What is the process for return or replacement of HAT2201WP-EL-E?
All HAT2201WP-EL-E units undergo pre-shipment inspection (PSI). If there is an issue with HAT2201WP-EL-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HAT2201WP-EL-E part is unused and in its original packaging.
Return procedure for HAT2201WP-EL-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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