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Renesas HAT2203C-EL-E
- Part No.:
- HAT2203C-EL-E
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- 6-SMD, Flat Leads
- Datasheet:
-
HAT2203C-EL-E.pdf
- Description:
- HAT2203C-EL-E - SILICON N CHANNE
- Quantity:
- Payment:
- Shipping:
Inventory:9,000
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Product details
Overview
HAT2203C-EL-E from Renesas Electronics is a silicon N-channel MOSFET designed for low-voltage power switching applications, featuring 20 V VDSS, 69 mΩ RDS(on) at VGS = 4.5 V, and 2.5 V gate drive capability. It supports 2 A continuous drain current on FR4 PCBs and is optimized for high-density mounting in space-constrained DC-DC converters and load switches.
For engineers reviewing the HAT2203C-EL-E datasheet, HAT2203C-EL-E pinout, HAT2203C-EL-E application, or HAT2203C-EL-E equivalent, key selection criteria include its low-threshold gate drive compatibility with 2.5 V logic, thermally robust CMFPAK-6 package, and body diode forward voltage of 0.8 V (typ.) for synchronous rectification support.
Technical Context
The HAT2203C-EL-E employs a planar trench-gate structure optimized for fast switching and low conduction loss at low gate voltages. Its 2.5 V threshold enables direct interface with modern microcontroller GPIOs without level-shifting circuitry.
Thermal performance is specified for a standard 40 × 40 × 1.6 mm FR4 board, delivering 830 mW channel dissipation at Ta = 25°C with derating to zero at 150°C case temperature. Switching parameters-including 6 ns td(on), 20 ns td(off), and 1.8 nC total gate charge-support efficient operation up to several hundred kHz in PWM-controlled loads.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 20 V - Maximum blocking voltage for 3.3 V/5 V rail protection and battery-powered load switching |
| RDS(on) @ VGS = 4.5 V | 69 mΩ (typ.) - Enables ≤138 mW conduction loss at 2 A, suitable for compact thermal design |
| RDS(on) @ VGS = 2.5 V | 107 mΩ (typ.) - Confirmed 2.5 V logic-compatible turn-on for ultra-low-power MCU interfaces |
| ID (continuous) | 2 A - Rated for sustained current on standard FR4 board without heatsink |
| Qg | 1.8 nC - Low gate charge minimizes driver power and supports high-frequency PWM efficiency |
| VGS(off) | 0.4–1.4 V - Tight threshold range ensures predictable turn-on across temperature and process variation |
| VDF @ IF = 2 A | 0.8 V (typ.) - Low body diode forward voltage reduces reverse recovery losses in flyback or buck topologies |
Pinout & Package
Package: CMFPAK-6 (RENESAS code PWSF0006JA-A), surface-mount, 6-pin leadless package with exposed drain pad for thermal enhancement and mechanical stability.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Source | Reference node for gate control; connects to system ground or low-side return path |
| 2, 3, 4, 5 | Drain | Four paralleled drain terminals reduce package inductance and improve current sharing; tied to high-side power rail or switch node |
| 6 | Gate | Control input requiring ≤10 μA leakage; driven directly by 2.5 V–4.5 V logic sources |
Key Features
| Feature | Design Value |
|---|---|
| 2.5 V gate drive compatibility | Validated RDS(on) = 107 mΩ at VGS = 2.5 V enables direct connection to low-voltage MCUs without gate drivers |
| Low RDS(on) at 4.5 V | 69 mΩ typ. reduces I²R losses in portable power management and USB-C PD sink applications |
| High-density CMFPAK-6 footprint | 2.1 × 1.7 mm outline with 0.65 mm pitch allows >30% board area reduction vs. SO-8 or TSOP-6 equivalents |
| Integrated body diode | 0.8 V VDF (typ.) supports bidirectional current flow in half-bridge configurations and reverse polarity protection circuits |
| FR4-optimized thermal rating | 830 mW Pch on 40 × 40 × 1.6 mm FR4 eliminates need for thermal vias or copper pours in cost-sensitive designs |
Applications
| USB Power Delivery Sink | Low-Voltage Load Switch |
|---|---|
Use Scenario: Controlling 5 V/3.3 V power rails in USB-C devices with strict inrush and fault isolation requirements. IC Role / Device Role / Timing Role: High-side power switch enabling controlled hot-plug insertion and overcurrent shutdown. Use Value: 2.5 V gate compatibility aligns with USB PD controller outputs; low RDS(on) limits voltage drop under 2 A load. |
Use Scenario: Enabling/disabling subsystems (e.g., sensors, displays) in battery-powered IoT nodes to minimize standby leakage. IC Role / Device Role / Timing Role: Low-threshold load switch providing precise ON/OFF control with minimal quiescent current. Use Value: Gate leakage <±10 μA ensures <1 μA control-line loading; VGS(off) range prevents false turn-on during brown-out. |
| DC-DC Synchronous Rectifier | Reverse Polarity Protection |
Use Scenario: Replacing Schottky diodes in buck converter output stages to improve efficiency at light-to-moderate loads. IC Role / Device Role / Timing Role: Low-side synchronous rectifier controlled by PWM signal synchronized to main switch. Use Value: 0.8 V VDF and 69 mΩ RDS(on) reduce conduction loss by >40% vs. 0.35 V Schottky at 1 A. |
Use Scenario: Protecting 3.3 V/5 V electronics from accidental reverse battery connection in handheld instruments. IC Role / Device Role / Timing Role: Source-connected MOSFET acting as ideal diode with automatic forward/reverse blocking. Use Value: Body diode orientation and low VGS(off) ensure reliable conduction only when polarity is correct; no external bias required. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel low-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ROHM RV1C002UNT2CL | 20 V VDSS, 55 mΩ RDS(on) @ 4.5 V, but requires ≥3.0 V VGS for full enhancement; no 2.5 V characterization | Lacks guaranteed 2.5 V drive support; unsuitable for direct interface with 2.5 V logic without gate boosting | Select when lower RDS(on) is critical and gate drive ≥3.0 V is available |
| Toshiba SSMT302R | 20 V VDSS, 80 mΩ RDS(on) @ 4.5 V, same CMFPAK-6 footprint, but higher Qg (2.5 nC) and slower td(off) (35 ns) | Higher switching losses limit usable frequency in high-efficiency SMPS; identical thermal profile on FR4 | Select when pin compatibility is mandatory and moderate switching speed suffices |
Compared with ROHM RV1C002UNT2CL and Toshiba SSMT302R, the HAT2203C-EL-E uniquely guarantees 2.5 V gate drive performance while maintaining competitive RDS(on) and gate charge-making it optimal for ultra-low-voltage MCU-controlled power rails where gate driver ICs are excluded to reduce BOM count and cost.
Availability
HAT2203C-EL-E is available at Aetrix Electronics and suitable for USB-C power delivery sinks, battery-powered load switches, DC-DC synchronous rectifiers, and reverse polarity protection circuits requiring stable component supply and long-term industrial availability.
Supply support for HAT2203C-EL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and enterprise applications.
The HAT2203C-EL-E belongs to Renesas' low-voltage power MOSFET family engineered for energy-efficient, space-constrained power management in portable and embedded systems.
FAQ
What is the maximum continuous drain current rating for the HAT2203C-EL-E?
The HAT2203C-EL-E is rated for 2 A continuous drain current (ID) when mounted on a standard 40 × 40 × 1.6 mm FR4 board at Ta = 25°C. This rating assumes no additional heatsinking and follows the derating curve shown in the datasheet's "Power vs. Temperature Derating" graph, dropping to zero at 150°C case temperature. The HAT2203C-EL-E must not exceed this limit under steady-state conditions to maintain reliability.
Does the HAT2203C-EL-E support true 2.5 V logic-level gate drive?
Yes-the HAT2203C-EL-E is explicitly characterized at VGS = 2.5 V, with RDS(on) = 107 mΩ (typ.) and 150 mΩ (max.) at ID = 1 A. Its gate threshold voltage VGS(off) ranges from 0.4 V to 1.4 V, ensuring full enhancement well within 2.5 V logic margins. This makes the HAT2203C-EL-E compatible with 2.5 V-output MCUs and PMICs without external level shifters.
What package type does the HAT2203C-EL-E use, and is it RoHS-compliant?
The HAT2203C-EL-E uses the CMFPAK-6 surface-mount package (RENESAS code PWSF0006JA-A), a 2.1 × 1.7 mm leadless package with an exposed drain pad. Per Renesas documentation and JEDEC compliance statements, the HAT2203C-EL-E meets RoHS Directive 2011/65/EU requirements and contains no restricted substances above allowable thresholds. The "-E" suffix in the part number confirms RoHS-compliant packaging.
Can the HAT2203C-EL-E be used in synchronous rectification applications?
Yes-the HAT2203C-EL-E includes an integrated body diode with VDF = 0.8 V (typ.) at IF = 2 A, and its low RDS(on) enables efficient synchronous rectification in buck or flyback converters. When used as a low-side switch, the HAT2203C-EL-E reduces conduction loss versus discrete Schottky diodes, especially at currents >0.5 A. Its 1.8 nC Qg also supports clean gate drive timing for synchronous control.
What is the absolute maximum gate-to-source voltage for the HAT2203C-EL-E?
The absolute maximum gate-to-source voltage (VGSS) for the HAT2203C-EL-E is ±12 V. Exceeding this rating-even momentarily-may cause irreversible gate oxide damage. Designers must ensure gate drive circuits include clamping (e.g., Zener diodes) or limiting resistors to prevent overshoot during switching transients. The HAT2203C-EL-E operates reliably within –10 V to +10 V per its IGSS specification of ±10 μA at VGS = ±10 V.
HAT2203C-EL-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 6-SMD, Flat Leads
- Packaging:
- Bulk
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 90mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 1.8 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 165 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 830mW (Ta)
- Operating Temperature:
- 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-CMFPAK
HAT2203C-EL-E FAQ
1.How can I place an order for HAT2203C-EL-E through Aetrix?
Please submit a Request for Quotation (RFQ) for HAT2203C-EL-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HAT2203C-EL-E reliable?
The price and inventory of HAT2203C-EL-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HAT2203C-EL-E is usually 5 days.
3.What payment methods are accepted for HAT2203C-EL-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HAT2203C-EL-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HAT2203C-EL-E?
HAT2203C-EL-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HAT2203C-EL-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HAT2203C-EL-E?
For technical support, including HAT2203C-EL-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HAT2203C-EL-E requirements.
6.How does Aetrix verify that HAT2203C-EL-E is sourced from the original manufacturer or authorized distributors?
All HAT2203C-EL-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HAT2203C-EL-E meets industry standards.
7.What is the process for return or replacement of HAT2203C-EL-E?
All HAT2203C-EL-E units undergo pre-shipment inspection (PSI). If there is an issue with HAT2203C-EL-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HAT2203C-EL-E part is unused and in its original packaging.
Return procedure for HAT2203C-EL-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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