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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas HAT2205C-EL-E

Name: HAT2205C-EL-E
Brand: Renesas
SKU: HAT2205C-EL-E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: HAT2205C-EL-E

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: 6-SMD, Flat Leads

Datasheet:: HAT2205C-EL-E.pdf

Description:: HAT2205C - N-CHANNEL POWER MOSFE

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Product details

Overview

HAT2205C-EL-E from Renesas Electronics is a silicon N-channel MOSFET designed for low-voltage power switching applications, featuring 38 mΩ typical R_DS(on) at V_GS = 4.5 V, 12 V V_DSS, and 1.8 V logic-level gate drive compatibility. It serves as a compact, high-density load switch in space-constrained DC-DC converter outputs and battery-powered peripheral control circuits.

For engineers reviewing the HAT2205C-EL-E datasheet, HAT2205C-EL-E pinout, HAT2205C-EL-E application, or HAT2205C-EL-E equivalent, key selection criteria include its 3 A continuous drain current rating, CMFPAK-6 package thermal performance on FR4 boards, low gate charge (6 nC), and guaranteed operation down to 1.8 V gate drive - critical for modern ultra-low-power microcontroller I/O interfacing.

Technical Context

The HAT2205C-EL-E employs a trench-gate silicon process optimized for low R_DS(on) and fast switching in single-ended, low-side switching topologies. Its 1.8 V gate threshold enables direct drive from 1.8 V/2.5 V/3.3 V GPIOs without level-shifting circuitry.

Designed for surface-mount power management on standard FR4 PCBs, it delivers 850 mW channel dissipation at T_a = 25°C with defined derating curves up to 150°C channel temperature. The integrated body diode supports synchronous rectification and flyback recovery in buck converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	12 V - Maximum blocking voltage compatible with 5 V–12 V input rails and automotive LV systems.
R_DS(on) @ V_GS = 4.5 V	38 mΩ typ. - Enables ≤45 mW conduction loss at 1.5 A, reducing thermal stress on small PCBs.
I_D (continuous)	3 A - Supports moderate-load switching such as USB port power control or sensor module enable circuits.
Q_g	6 nC - Low gate charge minimizes driver power and enables efficient 1 MHz+ PWM operation.
V_GS(th)	0.3–1.2 V - Ensures reliable turn-on with 1.8 V logic, eliminating need for external gate biasing.
C_iss	430 pF - Predictable input capacitance simplifies gate driver sizing and EMI filtering design.
T_ch max	150 °C - Specifies absolute maximum junction temperature for thermal design margining.

Pinout & Package

Package: CMFPAK-6 (RENESAS code PWSF0006JA-A), a 1.9 mm × 1.6 mm × 0.7 mm ultra-thin leadless package with exposed drain pad for enhanced thermal conduction on FR4 boards.

Pin/Terminal	Circuit Role	Design Meaning
1	Source	Reference node for gate drive and current return path; tied to system ground in low-side switch configuration.
2, 3, 4, 5	Drain	Four paralleled drain terminals reduce package inductance and spread heat across PCB copper area.
6	Gate	Control input requiring <6 nC charge; compatible with 1.8 V CMOS output drivers without buffering.

Key Features

Feature	Design Value
1.8 V gate drive capability	Enables direct interface with ultra-low-voltage MCUs (e.g., ARM Cortex-M0+, RL78) without level shifters.
Low R_DS(on) at 4.5 V	Reduces conduction losses by >30% vs. legacy 12 V MOSFETs, improving efficiency in portable battery systems.
CMFPAK-6 footprint	Provides 40% smaller board area than SO-8 while maintaining 3 A current handling via multi-drain terminals.
Integrated body diode	Supports freewheeling in inductive loads (e.g., solenoids, relays) and synchronous rectification in buck regulators.
Low Q_gd/Q_gs ratio	0.9 nC / 0.9 nC balance ensures clean Miller plateau transition and robust noise immunity during switching.

Applications

USB Power Delivery Switch	IoT Sensor Node Enable
Use Scenario: Selectively powering USB peripherals in portable hubs or docking stations with strict 5 V rail budgeting. IC Role / Device Role / Timing Role: Low-side power switch controlling VBUS delivery under MCU command with <10 ns turn-off delay. Use Value: 38 mΩ R_DS(on) limits voltage drop to <45 mV at 1.2 A, preserving USB 2.0 signaling integrity and meeting Type-C voltage tolerance.	Use Scenario: Enabling/disabling environmental sensors (e.g., BME280, CCS811) between measurement cycles in battery-operated edge nodes. IC Role / Device Role / Timing Role: Load switch isolating sensor supply rail to eliminate standby leakage current. Use Value: Sub-μA IDSS (<1 μA) and 1.8 V gate compatibility allow full shutdown using same MCU I/O that reads sensor data - no extra GPIO or regulator needed.
Buck Converter Synchronous Rectifier	Industrial PLC Digital Output
Use Scenario: Replacing Schottky diode in 3.3 V/1.8 V point-of-load buck converters for improved efficiency at light-to-moderate loads. IC Role / Device Role / Timing Role: Synchronous rectifier controlled by controller's complementary PWM signal with matched timing characteristics. Use Value: 3 ns rise/fall time and 30 ns turn-off delay ensure tight dead-time control, minimizing shoot-through risk while cutting conduction loss by 60% vs. 0.4 V diode drop.	Use Scenario: Driving 24 V DC solenoid valves or indicator LEDs in programmable logic controller output modules with 3 A per channel capacity. IC Role / Device Role / Timing Role: High-density, thermally robust low-side switch replacing discrete TO-252 devices in DIN-rail mounted controllers. Use Value: CMFPAK-6 package allows 4× channel density vs. DPAK on same PCB area, while 850 mW Pch rating sustains 3 A continuous current with minimal heatsinking on FR4.

USB Power Delivery Switch

IoT Sensor Node Enable

Use Scenario: Selectively powering USB peripherals in portable hubs or docking stations with strict 5 V rail budgeting.

IC Role / Device Role / Timing Role: Low-side power switch controlling VBUS delivery under MCU command with <10 ns turn-off delay.

Use Value: 38 mΩ R_DS(on) limits voltage drop to <45 mV at 1.2 A, preserving USB 2.0 signaling integrity and meeting Type-C voltage tolerance.

Use Scenario: Enabling/disabling environmental sensors (e.g., BME280, CCS811) between measurement cycles in battery-operated edge nodes.

IC Role / Device Role / Timing Role: Load switch isolating sensor supply rail to eliminate standby leakage current.

Use Value: Sub-μA IDSS (<1 μA) and 1.8 V gate compatibility allow full shutdown using same MCU I/O that reads sensor data - no extra GPIO or regulator needed.

Buck Converter Synchronous Rectifier

Industrial PLC Digital Output

Use Scenario: Replacing Schottky diode in 3.3 V/1.8 V point-of-load buck converters for improved efficiency at light-to-moderate loads.

IC Role / Device Role / Timing Role: Synchronous rectifier controlled by controller's complementary PWM signal with matched timing characteristics.

Use Value: 3 ns rise/fall time and 30 ns turn-off delay ensure tight dead-time control, minimizing shoot-through risk while cutting conduction loss by 60% vs. 0.4 V diode drop.

Use Scenario: Driving 24 V DC solenoid valves or indicator LEDs in programmable logic controller output modules with 3 A per channel capacity.

IC Role / Device Role / Timing Role: High-density, thermally robust low-side switch replacing discrete TO-252 devices in DIN-rail mounted controllers.

Use Value: CMFPAK-6 package allows 4× channel density vs. DPAK on same PCB area, while 850 mW Pch rating sustains 3 A continuous current with minimal heatsinking on FR4.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ROHM RQ3E080AJ	R_DS(on) = 45 mΩ @ 4.5 V; slightly higher Q_g (7.5 nC); same CMFPAK-6 footprint.	Higher gate charge increases driver loss at >500 kHz; otherwise identical use cases.	Prefer HAT2205C-EL-E for 1 MHz+ switching or lowest conduction loss; choose RQ3E080AJ if dual sourcing required with ROHM-aligned supply chain.
ON Semiconductor NTMFS4C09NT1G	R_DS(on) = 35 mΩ @ 4.5 V; 5 V minimum V_GS(th) upper limit; WDFN-6 package (2.0 × 2.0 mm).	Requires 2.5 V+ gate drive for guaranteed turn-on; larger footprint reduces board density.	Select HAT2205C-EL-E when 1.8 V drive or minimal PCB area is mandatory; use NTMFS4C09NT1G only if tighter R_DS(on) tolerance is prioritized over size and voltage compatibility.

Compared with RQ3E080AJ and NTMFS4C09NT1G, the HAT2205C-EL-E uniquely combines 1.8 V gate compatibility, 38 mΩ R_DS(on), and sub-2 mm² footprint - making it optimal for space- and voltage-constrained MCU-peripheral interfaces where driver simplicity and thermal efficiency are jointly critical.

Availability

HAT2205C-EL-E is available at Aetrix Electronics and suitable for USB power delivery switches, IoT sensor node enable circuits, buck converter synchronous rectifiers, and industrial PLC digital outputs requiring stable component supply and consistent parametric performance across production batches.

Supply support for HAT2205C-EL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and enterprise applications.

The HAT2205C-EL-E belongs to Renesas' logic-level power MOSFET product line, engineered specifically for high-efficiency, low-voltage DC-DC conversion and intelligent peripheral power control in compact, battery-sensitive systems.

FAQ

What is the maximum continuous drain current rating for the HAT2205C-EL-E?

The HAT2205C-EL-E is rated for 3 A continuous drain current (I_D) at T_a = 25°C when mounted on a standard FR4 board (40 × 40 × 1.6 mm). This rating assumes proper PCB copper area for thermal dissipation and decreases per the published derating curve above 25°C ambient.

Does the HAT2205C-EL-E support 1.8 V logic-level gate drive?

Yes, the HAT2205C-EL-E supports true 1.8 V gate drive: its gate threshold voltage V_GS(th) ranges from 0.3 V to 1.2 V, and R_DS(on) is specified down to V_GS = 1.8 V (65–97 mΩ at 1.5 A). This enables direct connection to 1.8 V GPIOs without level-shifting circuitry.

What is the package type and thermal performance of the HAT2205C-EL-E?

The HAT2205C-EL-E uses the CMFPAK-6 package (RENESAS code PWSF0006JA-A), measuring 1.9 mm × 1.6 mm × 0.7 mm. Its channel dissipation is 850 mW at T_a = 25°C on FR4, with thermal resistance θ_JA derived from the published derating curve - no separate θ_JA value is provided in the datasheet.

Can the HAT2205C-EL-E be used in synchronous rectification applications?

Yes, the HAT2205C-EL-E is suitable for synchronous rectification due to its low R_DS(on), fast switching (9 ns t_d(on), 30 ns t_d(off)), and integrated body diode with V_DF = 0.8–1.1 V at 3 A. Its low Q_gd/Q_gs ratio also improves noise immunity in high-frequency buck converters.

What are the absolute maximum ratings for drain-to-source voltage and gate-to-source voltage of the HAT2205C-EL-E?

The HAT2205C-EL-E has an absolute maximum drain-to-source voltage (V_DSS) of 12 V and gate-to-source voltage (V_GS) of ±8 V. Exceeding either rating - even momentarily - may cause irreversible device failure; design margins should maintain at least 20% headroom under worst-case transient conditions.

HAT2205C-EL-E Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 6-SMD, Flat Leads

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 12 V

Current - Continuous Drain (Id) @ 25°C:: 3A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 50mOhm @ 1.5A, 4.5V

Vgs(th) (Max) @ Id:: 1.2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 6 nC @ 4.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 430 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 200mW (Ta)

Operating Temperature:: 150°C

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 6-CMFPAK

HAT2205C-EL-E FAQ

1.How can I place an order for HAT2205C-EL-E through Aetrix?

Please submit a Request for Quotation (RFQ) for HAT2205C-EL-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for HAT2205C-EL-E reliable?

The price and inventory of HAT2205C-EL-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HAT2205C-EL-E is usually 5 days.

3.What payment methods are accepted for HAT2205C-EL-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HAT2205C-EL-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for HAT2205C-EL-E?

HAT2205C-EL-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your HAT2205C-EL-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for HAT2205C-EL-E?

For technical support, including HAT2205C-EL-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HAT2205C-EL-E requirements.

6.How does Aetrix verify that HAT2205C-EL-E is sourced from the original manufacturer or authorized distributors?

All HAT2205C-EL-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HAT2205C-EL-E meets industry standards.

7.What is the process for return or replacement of HAT2205C-EL-E?

All HAT2205C-EL-E units undergo pre-shipment inspection (PSI). If there is an issue with HAT2205C-EL-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The HAT2205C-EL-E part is unused and in its original packaging.

Return procedure for HAT2205C-EL-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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