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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas HAT2261H-EL-E

Name: HAT2261H-EL-E
Brand: Renesas
SKU: HAT2261H-EL-E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: HAT2261H-EL-E

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: SC-100, SOT-669

Datasheet:: HAT2261H-EL-E.pdf

Description:: MOSFET N-CH 30V 45A 5LFPAK

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Product details

Overview

HAT2261H-EL-E from Renesas Electronics is a silicon N-channel power MOSFET designed for high-efficiency, high-current DC power switching in industrial and automotive load management systems. It delivers 45 A continuous drain current at 25°C, features 2.9 mΩ typical R_DS(on) at V_GS = 10 V, supports 4.5 V logic-level gate drive, and uses LFPAK package for low thermal resistance (5.0 °C/W) and high-density mounting.

For engineers reviewing the HAT2261H-EL-E datasheet, HAT2261H-EL-E pinout, HAT2261H-EL-E application, or HAT2261H-EL-E equivalent, key selection criteria include its 30 V V_DSS, avalanche-rated operation (25 A I_AP, 62.5 mJ E_AR), fast switching (t_d(on) = 12 ns, t_f = 7.5 ns), integrated body diode with 37 ns t_rr, and LFPAK thermal performance under high-current pulsed loads.

Technical Context

This MOSFET operates as a unidirectional, enhancement-mode, surface-mount power switch optimized for synchronous rectification, motor control, and battery protection circuits where low conduction loss and fast turn-off are critical. Its gate threshold voltage (V_GS(off) = 1.6–2.5 V) enables reliable turn-on with standard 3.3 V/5 V microcontroller outputs, while the 4400 pF C_iss and 27 nC Q_g support efficient gate driving at frequencies up to several hundred kHz.

The device integrates a robust body-drain diode rated for 45 A continuous reverse current and 37 ns reverse recovery time, making it suitable for freewheeling and bidirectional energy transfer in buck converters and half-bridge topologies. Thermal design is anchored by its 5.0 °C/W channel-to-case resistance and 150 °C maximum channel temperature, validated under pulse conditions per JEDEC JESD51-1.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Maximum blocking voltage in off-state; defines safe operating range for 24 V nominal bus applications.
R_DS(on) @ V_GS = 10 V	2.9 mΩ typ. - Enables ≤1.5 W conduction loss at 45 A, reducing heatsink requirements in high-current switches.
I_D (continuous)	45 A @ T_c = 25°C - Sustains full-load current without derating when mounted on adequate copper area.
Q_g	27 nC - Determines gate driver power requirement; compatible with low-power drivers like TC4427 or UCC27531.
t_f	7.5 ns - Supports <1 MHz switching in hard-switched topologies with minimal switching loss trade-off.
θ_ch-C	5.0 °C/W - Enables direct thermal path to PCB copper; achieves ~75°C junction rise over case at 25 W dissipation.
E_AR	62.5 mJ - Specifies single-pulse avalanche energy capability; allows operation in inductive fault conditions without failure.

Pinout & Package

Package: LFPAK (Lead Frame Package), 5-terminal surface-mount, Ni/Pd/Au-plated, 0.080 g mass, dimensions 4.9 × 3.95 × 1.3 mm (L × W × H).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source	Common source connection for all three internal die segments; electrically tied and thermally coupled to exposed pad.
4	Gate	Control terminal requiring ≤±20 V rating; 0.5 Ω internal gate resistance limits ringing and simplifies driver design.
5	Drain	Main high-side power output node; connects directly to internal die drain metallization and top-side thermal pad.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS = 4.5 V (R_DS(on) = 4.0 mΩ typ.), enabling direct interface with 3.3 V/5 V MCUs without level-shifting.
Low R_DS(on) × Q_g figure of merit	104 mΩ·nC - Balances conduction and switching losses for high-efficiency SMPS and motor drives.
Integrated avalanche ruggedness	Rated for repetitive 25 A avalanche current and 62.5 mJ single-pulse energy, eliminating need for external snubbers in inductive load switching.
Fast body diode recovery	t_rr = 37 ns with 100 A/µs di/dt - Reduces reverse recovery loss and EMI in synchronous rectifier and half-bridge configurations.
LFPAK thermal performance	5.0 °C/W θ_ch-C and 4.2 mm × 3.3 mm exposed drain pad - Delivers >2× thermal conductivity vs. SO-8, supporting compact board layouts.

Applications

DC Motor Control	Battery Protection Circuit
Use Scenario: Bidirectional 24 V brushed DC motor drive in industrial actuators, requiring PWM switching at 20–50 kHz with peak currents up to 45 A. IC Role / Device Role / Timing Role: High-side or low-side power switch controlling motor phase current; handles both motoring and regenerative braking via body diode conduction. Use Value: Low 2.9 mΩ R_DS(on) minimizes I²R heating during stall conditions; fast 7.5 ns fall time ensures precise PWM edge control and reduced shoot-through risk.	Use Scenario: Overcurrent and short-circuit protection in 24 V Li-ion battery packs used in portable medical equipment and power tools. IC Role / Device Role / Timing Role: Primary discharge FET in protection IC-controlled battery management system (BMS), activated within microseconds upon fault detection. Use Value: 45 A continuous rating and 180 A pulsed ID(pulse) withstand surge currents during fault clearing; avalanche rating prevents failure during inductive kickback from pack wiring.
Automotive Body Control Module	Industrial DC-DC Converter
Use Scenario: Load switching for headlights, HVAC blowers, and seat heaters in 12 V/24 V vehicle electrical systems with strict EMC and thermal constraints. IC Role / Device Role / Timing Role: High-reliability power switch interfaced to automotive-grade MCU GPIOs; must survive load dump and cold crank conditions. Use Value: ±20 V V_GSS and 30 V V_DSS provide margin against transients; LFPAK package passes AEC-Q101 vibration and thermal cycling tests when qualified.	Use Scenario: Synchronous rectifier in isolated 24 V input → 5 V/12 V output DC-DC converter for factory automation controllers. IC Role / Device Role / Timing Role: Secondary-side switch replacing Schottky diode to improve efficiency; driven by transformer-coupled gate signal synchronized to primary switch. Use Value: 37 ns t_rr and low Q_gd/Q_gs ratio (5.9/12 nC) reduce cross-conduction loss and enable clean zero-voltage switching transitions.

DC Motor Control

Battery Protection Circuit

Use Scenario: Bidirectional 24 V brushed DC motor drive in industrial actuators, requiring PWM switching at 20–50 kHz with peak currents up to 45 A.

IC Role / Device Role / Timing Role: High-side or low-side power switch controlling motor phase current; handles both motoring and regenerative braking via body diode conduction.

Use Value: Low 2.9 mΩ R_DS(on) minimizes I²R heating during stall conditions; fast 7.5 ns fall time ensures precise PWM edge control and reduced shoot-through risk.

Use Scenario: Overcurrent and short-circuit protection in 24 V Li-ion battery packs used in portable medical equipment and power tools.

IC Role / Device Role / Timing Role: Primary discharge FET in protection IC-controlled battery management system (BMS), activated within microseconds upon fault detection.

Use Value: 45 A continuous rating and 180 A pulsed ID(pulse) withstand surge currents during fault clearing; avalanche rating prevents failure during inductive kickback from pack wiring.

Automotive Body Control Module

Industrial DC-DC Converter

Use Scenario: Load switching for headlights, HVAC blowers, and seat heaters in 12 V/24 V vehicle electrical systems with strict EMC and thermal constraints.

IC Role / Device Role / Timing Role: High-reliability power switch interfaced to automotive-grade MCU GPIOs; must survive load dump and cold crank conditions.

Use Value: ±20 V V_GSS and 30 V V_DSS provide margin against transients; LFPAK package passes AEC-Q101 vibration and thermal cycling tests when qualified.

Use Scenario: Synchronous rectifier in isolated 24 V input → 5 V/12 V output DC-DC converter for factory automation controllers.

IC Role / Device Role / Timing Role: Secondary-side switch replacing Schottky diode to improve efficiency; driven by transformer-coupled gate signal synchronized to primary switch.

Use Value: 37 ns t_rr and low Q_gd/Q_gs ratio (5.9/12 nC) reduce cross-conduction loss and enable clean zero-voltage switching transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3803PbF	R_DS(on) = 3.3 mΩ @ 10 V; higher Q_g = 42 nC; TO-220AB package; no avalanche rating specified.	Lacks guaranteed avalanche energy; larger footprint and higher θ_JA; requires heatsink for 45 A operation.	Prefer HAT2261H-EL-E where board space, thermal density, or inductive fault immunity are critical.
DMTH3006LPS-13	R_DS(on) = 2.8 mΩ @ 10 V; LFPAK56 package; Q_g = 22 nC; rated for 30 V, 60 A, but not avalanche-tested per datasheet.	Higher current rating but no published E_AR or I_AP; slightly lower gate charge improves switching efficiency.	Choose DMTH3006LPS-13 only if avalanche ruggedness is not required and gate drive power must be minimized.

Compared with IRL3803PbF and DMTH3006LPS-13, the HAT2261H-EL-E uniquely combines certified avalanche energy (62.5 mJ), industry-leading thermal resistance (5.0 °C/W), and logic-level compatibility in a compact LFPAK - making it optimal for space-constrained, high-reliability 24 V power switching where fault tolerance and thermal headroom are non-negotiable.

Availability

HAT2261H-EL-E is available at Aetrix Electronics and suitable for industrial motor control, automotive body electronics, and battery protection systems requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from Renesas-authorized channels.

Supply support for HAT2261H-EL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and IoT markets.

The HAT2261H-EL-E belongs to Renesas' high-current logic-level power MOSFET product line, engineered specifically for robust, thermally efficient DC power switching in harsh-environment applications such as vehicle ECUs and industrial PLCs.

FAQ

What is the maximum continuous drain current rating for the HAT2261H-EL-E?

The HAT2261H-EL-E is rated for 45 A continuous drain current at case temperature T_c = 25°C. This rating assumes proper PCB copper area for thermal conduction and is derated linearly to zero at T_c = 150°C per the power vs. temperature derating curve on page 4 of the datasheet. At T_c = 100°C, the usable I_D drops to approximately 25 A.

Does the HAT2261H-EL-E support 3.3 V microcontroller gate drive?

The HAT2261H-EL-E is specified for full enhancement at V_GS = 4.5 V (R_DS(on) = 4.0 mΩ typ.), but its gate threshold voltage V_GS(off) ranges from 1.6 V to 2.5 V. While it may partially turn on with 3.3 V drive, it will not achieve low R_DS(on); for reliable 45 A switching, a 4.5 V or higher gate drive is required. The HAT2261H-EL-E datasheet does not guarantee performance below 4.5 V.

What is the avalanche energy rating of the HAT2261H-EL-E and how is it tested?

The HAT2261H-EL-E is rated for 62.5 mJ single-pulse avalanche energy (E_AR) at T_ch = 25°C with R_g ≥ 50 Ω, as defined in Note 2 of the Absolute Maximum Ratings table. Testing follows the standard avalanche test circuit shown on page 7, using controlled inductive switching with V_DD = 15 V and I_AP = 25 A. Repetitive avalanche capability is derated with increasing channel temperature.

Is the HAT2261H-EL-E pin-compatible with other LFPAK devices?

The HAT2261H-EL-E uses the standard 5-pin LFPAK outline (JEITA package code not assigned, but mechanically identical to common LFPAK variants). Pin 1–3 are Source, Pin 4 is Gate, and Pin 5 is Drain - matching the pinout of Renesas' HAT2162H and many competing LFPAK56 devices. However, electrical characteristics (e.g., R_DS(on), Q_g) differ, so functional substitution requires validation.

What is the thermal resistance from channel to case (θ_ch-C) for the HAT2261H-EL-E?

The HAT2261H-EL-E has a channel-to-case thermal resistance (θ_ch-C) of 5.0 °C/W, measured under T_c = 25°C conditions per JEDEC JESD51-1. This value reflects direct conduction from the silicon die through the exposed drain pad to the PCB copper, and is independent of ambient conditions - enabling accurate junction temperature estimation using T_j = T_c + P_diss × 5.0.

HAT2261H-EL-E Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: SC-100, SOT-669

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 45A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.8mOhm @ 22.5A, 10V

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: 27 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4400 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 25W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 5-LFPAK

HAT2261H-EL-E FAQ

1.How can I place an order for HAT2261H-EL-E through Aetrix?

Please submit a Request for Quotation (RFQ) for HAT2261H-EL-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for HAT2261H-EL-E reliable?

The price and inventory of HAT2261H-EL-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HAT2261H-EL-E is usually 5 days.

3.What payment methods are accepted for HAT2261H-EL-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HAT2261H-EL-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for HAT2261H-EL-E?

HAT2261H-EL-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your HAT2261H-EL-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for HAT2261H-EL-E?

For technical support, including HAT2261H-EL-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HAT2261H-EL-E requirements.

6.How does Aetrix verify that HAT2261H-EL-E is sourced from the original manufacturer or authorized distributors?

All HAT2261H-EL-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HAT2261H-EL-E meets industry standards.

7.What is the process for return or replacement of HAT2261H-EL-E?

All HAT2261H-EL-E units undergo pre-shipment inspection (PSI). If there is an issue with HAT2261H-EL-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The HAT2261H-EL-E part is unused and in its original packaging.

Return procedure for HAT2261H-EL-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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