Renesas HAT2266H-EL-E

Overview

HAT2266H-EL-E from Renesas Electronics is a silicon N-channel power MOSFET designed for high-efficiency DC-DC conversion and motor drive switching applications, featuring R_DS(on) = 9.5 mΩ (typ.) at V_GS = 10 V, 4.5 V logic-level gate drive capability, and 30 A continuous drain current rating in LFPAK (PTZZ0005DA-A) package.

For engineers reviewing the HAT2266H-EL-E datasheet, HAT2266H-EL-E pinout, HAT2266H-EL-E application, or HAT2266H-EL-E equivalent, key selection criteria include low on-resistance at 4.5 V gate drive, avalanche energy rating of 34 mJ, body-diode reverse recovery time of 40 ns, and thermal resistance θ_ch-C = 5.44 °C/W - all critical for compact, high-current power stage designs.

Technical Context

This MOSFET employs a trench-gate process optimized for low R_DS(on) and fast switching, with gate charge Q_g = 25 nC and Q_gd = 9 nC enabling efficient operation in synchronous buck converters up to 500 kHz. Its 60 V V_DSS rating supports 24–48 V industrial bus systems.

The integrated body diode exhibits V_DF = 0.84 V (typ.) at I_F = 30 A and t_rr = 40 ns under dI/dt = 100 A/µs, making it suitable for freewheeling paths where reverse recovery loss must be minimized. Thermal design is anchored by a channel-to-case resistance of 5.44 °C/W and T_ch = 150 °C maximum.

Key Specifications

Pinout & Package

Package: LFPAK (RENESAS code PTZZ0005DA-A), surface-mount, 5-pin lead-free outline with exposed drain pad for thermal performance. Dimensions: 4.9 × 3.95 × 1.3 mm (L × W × H).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar power switching applications.

Compared with IPB070N06LGATMA1 and DMTH6005LSD-13, the HAT2266H-EL-E delivers optimal balance of 4.5 V drive compatibility, 60 V robustness, and LFPAK thermal performance - making it ideal for mid-power industrial and telecom converters where board area, gate drive simplicity, and transient resilience are jointly prioritized.

Availability

HAT2266H-EL-E is available at Aetrix Electronics and suitable for industrial motor drives, server VRMs, telecom DC-DC converters, and automotive body control modules requiring stable component supply and long-term production continuity.

Supply support for HAT2266H-EL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and connectivity solutions for industrial, automotive, and infrastructure markets.

The HAT2266H-EL-E belongs to Renesas' high-current logic-level power MOSFET product line, engineered specifically for efficiency-critical switching in 24–48 V power systems where low gate drive voltage, fast transitions, and rugged avalanche behavior are mandatory.

FAQ

What is the maximum continuous drain current rating for the HAT2266H-EL-E?

The HAT2266H-EL-E is rated for 30 A continuous drain current (I_D) at T_c = 25 °C. This rating assumes proper PCB copper area for thermal dissipation; derating applies above 25 °C case temperature per the power vs. temperature curve on page 3 of the datasheet. At 100 °C case temperature, the usable I_D drops to approximately 18 A. The HAT2266H-EL-E must be mounted on ≥ 10 cm² of 2 oz copper with thermal vias to sustain full 30 A operation.

Does the HAT2266H-EL-E support 3.3 V gate drive?

The HAT2266H-EL-E does not fully enhance at 3.3 V gate drive - its gate threshold voltage (V_GS(off)) ranges from 1.0 V to 2.5 V, but R_DS(on) rises sharply below 4.5 V. At V_GS = 3.3 V, R_DS(on) exceeds 25 mΩ, doubling conduction loss. The HAT2266H-EL-E is specified and characterized for reliable operation at V_GS = 4.5 V and above, making it compatible with 5 V logic and most 3.3 V systems paired with simple gate buffer stages.

What is the thermal resistance from channel to case for the HAT2266H-EL-E?

The channel-to-case thermal resistance (θ_ch-C) of the HAT2266H-EL-E is 5.44 °C/W, measured under standard test conditions (T_c = 25 °C). This value reflects the intrinsic thermal path from the silicon die to the exposed drain pad in the LFPAK package. To achieve this performance, the HAT2266H-EL-E must be soldered to a minimum 10 mm × 10 mm copper area with ≥ 9 thermal vias (0.3 mm diameter) connecting to inner ground planes. The HAT2266H-EL-E's low θ_ch-C enables 23 W channel dissipation at 125 °C temperature rise.

Can the HAT2266H-EL-E be used in avalanche mode repeatedly?

The HAT2266H-EL-E is rated for single-pulse avalanche energy (E_AR) of 34 mJ at T_ch = 25 °C, but Renesas does not specify repetitive avalanche capability. The datasheet provides only single-pulse test conditions (R_g ≥ 50 Ω, T_ch = 25 °C); no derating curves or cycle-life data are given for repeated events. For reliability, the HAT2266H-EL-E should be operated within SOA limits or protected with external clamping. Repetitive avalanche stress is not recommended in production designs using the HAT2266H-EL-E.

Is the HAT2266H-EL-E RoHS compliant and lead-free?

Yes, the HAT2266H-EL-E is lead-free and RoHS compliant, as explicitly stated in the "Features" section of the datasheet ("Lead Free") and confirmed by Renesas' environmental compliance documentation. The LFPAK package uses Ni/Pd/Au plating, and the device meets EU RoHS Directive 2011/65/EU requirements. The HAT2266H-EL-E carries the "-EL-E" suffix, which denotes lead-free taping packaging per Renesas' ordering nomenclature - ensuring full compliance for both the die and assembly.