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Renesas HAT2279H-EL-E
- Part No.:
- HAT2279H-EL-E
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- SC-100, SOT-669
- Datasheet:
-
HAT2279H-EL-E.pdf
- Description:
- MOSFET N-CH 80V 30A LFPAK
- Quantity:
- Payment:
- Shipping:
Inventory:9,498
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Product details
Overview
HAT2279H-EL-E from Renesas Electronics is a silicon N-channel power MOSFET designed for high-efficiency DC-DC conversion and motor drive switching in industrial power supplies and automotive body control modules. It delivers RDS(on) = 9.5 mΩ (typ.) at VGS = 10 V, supports 4.5 V gate drive, and handles continuous drain current up to 30 A with 80 V VDSS rating.
For engineers reviewing the HAT2279H-EL-E datasheet, HAT2279H-EL-E pinout, HAT2279H-EL-E application, or HAT2279H-EL-E equivalent, key selection criteria include its LFPAK package thermal performance (θch-C = 5°C/W), avalanche energy rating (EAR = 83 mJ), and low gate charge (Qg = 60 nC) for fast switching in synchronous buck converters.
Technical Context
This MOSFET employs a trench-gate process optimized for low conduction loss and high switching speed. Its gate threshold voltage range (VGS(off) = 0.8–2.3 V) enables reliable turn-on with standard logic-level drivers, while the integrated body diode exhibits trr = 50 ns and VDF = 0.83 V (typ.) at IF = 30 A.
The device operates within a channel temperature range of –55°C to +150°C and is rated for repetitive avalanche energy up to 83 mJ at Tch = 25°C. Its Ciss = 3520 pF and Crss = 160 pF support stable operation in hard-switched topologies with minimal Miller-induced shoot-through risk.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 80 V - Maximum blocking voltage for 24 V/48 V industrial bus and automotive battery-supplied systems |
| RDS(on) @ VGS = 10 V | 9.5 mΩ typ. - Enables ≤1.4 W conduction loss at 30 A, reducing heatsink requirements |
| RDS(on) @ VGS = 4.5 V | 11 mΩ typ. - Ensures full enhancement with 3.3 V or 5 V microcontroller GPIOs |
| Qg | 60 nC - Supports <100 ns total switching time with 4.7 Ω gate resistor, minimizing switching loss |
| tr/tf | 14.5 ns / 9.5 ns - Enables >1 MHz PWM operation in high-frequency DC-DC regulators |
| EAR | 83 mJ - Withstands single-pulse inductive energy without failure in motor drive freewheeling |
| θch-C | 5°C/W - Allows 25 W dissipation with ≤125°C case temperature rise, supporting compact PCB layout |
Pinout & Package
Package: LFPAK (RENESAS code PTZZ0005DA-A), surface-mount, lead-free, 5-pin outline with exposed drain pad for thermal enhancement.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source | Common source connection for low-side switching; electrically tied to thermal pad via internal metal |
| 4 | Gate | Control input requiring ≤0.5 Ω gate resistance for optimal switching; sensitive to ESD (±20 V max) |
| 5 | Drain | Main power output node; connected to large copper area for heat transfer and current handling |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Guaranteed turn-on at VGS = 4.5 V, compatible with 3.3 V/5 V MCU outputs without level-shifting |
| Low RDS(on) × Qg figure-of-merit | 570 mΩ·nC - Balances conduction and switching losses for high-efficiency SMPS designs |
| High-density LFPAK packaging | 4.0 mm × 4.2 mm footprint with 0.75 mm height - Enables >30% board space reduction vs. SO-8 |
| Robust avalanche capability | Rated for 25 A repetitive avalanche current and 83 mJ energy - Eliminates need for external snubbers in inductive loads |
| Fast body diode recovery | trr = 50 ns with soft recovery characteristic - Reduces EMI and voltage overshoot in synchronous rectification |
Applications
| Industrial Motor Drive | Automotive Body Control Module |
|---|---|
|
Use Scenario: Driving 12 V BLDC fans and solenoids in HVAC actuators and seat adjusters. IC Role / Device Role / Timing Role: Low-side power switch controlling current flow through inductive loads with PWM duty cycling. Use Value: 9.5 mΩ RDS(on) minimizes power loss during continuous 20 A operation, extending module lifetime under thermal stress. |
Use Scenario: Load switching for lighting, window lift, and mirror controls in 12 V vehicle electrical architecture. IC Role / Device Role / Timing Role: High-reliability power FET enabling short-circuit protected load management per LIN/CAN command. Use Value: 80 V VDSS withstands load-dump transients up to 87 V, meeting ISO 7637-2 Pulse 5a requirements without clamping diodes. |
| Server PSU Synchronous Rectifier | Industrial DC-DC Converter |
|
Use Scenario: Secondary-side synchronous rectification in 48 V–12 V isolated buck converters for data center power supplies. IC Role / Device Role / Timing Role: Fast-turning N-channel switch replacing Schottky diodes to reduce forward voltage drop and improve efficiency. Use Value: 60 nC Qg and 14.5 ns rise time enable precise gate timing control, minimizing dead-time losses at 500 kHz switching frequency. |
Use Scenario: High-current step-down regulation in programmable logic controller (PLC) power rails and I/O module supplies. IC Role / Device Role / Timing Role: Main switching element in non-isolated buck converter delivering up to 30 A at 5 V/3.3 V. Use Value: 5°C/W thermal resistance allows direct mounting to 2 oz copper plane, sustaining full-rated current without forced air cooling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPB070N08N3 G | RDS(on) = 7.0 mΩ @ 10 V, but requires 10 V gate drive; higher Qg = 72 nC | Better conduction loss at full gate drive, but unsuitable for 4.5 V logic-level systems | Prefer HAT2279H-EL-E when gate drive voltage is constrained to ≤5 V or system prioritizes fast switching over ultra-low RDS(on) |
| DMTH8006LSD-13 | RDS(on) = 10.5 mΩ @ 10 V, Qg = 52 nC, LFPAK56 package with identical pinout | Near-identical thermal and electrical specs; slightly higher RDS(on) but lower gate charge | Valid alternative if sourcing flexibility is required; verify PCB land pattern compatibility with PTZZ0005DA-A footprint |
Compared with IPB070N08N3 G and DMTH8006LSD-13, the HAT2279H-EL-E uniquely balances 4.5 V gate compatibility, 9.5 mΩ conduction loss, and 60 nC gate charge in the LFPAK package-making it optimal for space-constrained, logic-driven industrial switching where both efficiency and drive simplicity matter.
Availability
HAT2279H-EL-E is available at Aetrix Electronics and suitable for industrial motor drives, automotive body control modules, server power supply synchronous rectifiers, and industrial DC-DC converters requiring stable component supply across multi-year production cycles.
Supply support for HAT2279H-EL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.
The HAT2279H-EL-E belongs to Renesas' high-current logic-level power MOSFET product line, engineered specifically for robust, high-efficiency switching in thermally demanding 12 V–48 V power systems where gate drive simplicity and avalanche ruggedness are critical.
FAQ
What is the maximum continuous drain current rating for HAT2279H-EL-E?
The HAT2279H-EL-E is rated for 30 A continuous drain current (ID) at Tc = 25°C. Derating applies above 25°C case temperature per the Power vs. Temperature Derating curve on page 3 of the datasheet; at 100°C case temperature, the usable ID drops to approximately 18 A. This rating assumes proper PCB copper area and thermal management per the LFPAK package recommendations.
Does HAT2279H-EL-E support 3.3 V gate drive?
The HAT2279H-EL-E is specified for guaranteed turn-on at VGS = 4.5 V, with typical RDS(on) = 11 mΩ at that voltage. While it may partially enhance at 3.3 V, the gate threshold voltage range (0.8–2.3 V) does not ensure full saturation, and RDS(on) would increase significantly-potentially exceeding 30 mΩ. For reliable 3.3 V operation, a gate driver or level shifter is recommended to deliver ≥4.5 V to the HAT2279H-EL-E gate terminal.
What is the avalanche energy rating of HAT2279H-EL-E and how is it tested?
The HAT2279H-EL-E has a repetitive avalanche energy rating (EAR) of 83 mJ at Tch = 25°C, measured using the standardized avalanche test circuit shown on page 5 of the datasheet with IAP = 25 A, VDD = 50 V, Rg ≥ 50 Ω, and duty cycle < 0.1%. This rating confirms the device's ability to absorb inductive energy during unclamped inductive switching events common in motor and relay driving applications.
Is HAT2279H-EL-E RoHS compliant and lead-free?
Yes, the HAT2279H-EL-E is lead-free and RoHS compliant, as explicitly stated in the "Features" section of the datasheet. The LFPAK package uses Ni/Pd/Au plating, and the device meets EU RoHS Directive requirements for restricted substances. Renesas confirms environmental compliance through material declarations and third-party testing, and no exemptions apply to this part number.
What is the thermal resistance from channel to case (θch-C) for HAT2279H-EL-E?
The HAT2279H-EL-E has a channel-to-case thermal resistance (θch-C) of 5°C/W, measured under standard conditions (Tc = 25°C). This value reflects the internal thermal path from the silicon die to the exposed drain pad, and it assumes optimal soldering to a minimum 100 mm² copper area with ≥2 oz thickness. Actual board-level θJA will depend on PCB stack-up and airflow.
HAT2279H-EL-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- SC-100, SOT-669
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 80 V
- Current - Continuous Drain (Id) @ 25°C:
- 30A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 12mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- 60 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3520 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 25W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- LFPAK
HAT2279H-EL-E FAQ
1.How can I place an order for HAT2279H-EL-E through Aetrix?
Please submit a Request for Quotation (RFQ) for HAT2279H-EL-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HAT2279H-EL-E reliable?
The price and inventory of HAT2279H-EL-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HAT2279H-EL-E is usually 5 days.
3.What payment methods are accepted for HAT2279H-EL-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HAT2279H-EL-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HAT2279H-EL-E?
HAT2279H-EL-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HAT2279H-EL-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HAT2279H-EL-E?
For technical support, including HAT2279H-EL-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HAT2279H-EL-E requirements.
6.How does Aetrix verify that HAT2279H-EL-E is sourced from the original manufacturer or authorized distributors?
All HAT2279H-EL-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HAT2279H-EL-E meets industry standards.
7.What is the process for return or replacement of HAT2279H-EL-E?
All HAT2279H-EL-E units undergo pre-shipment inspection (PSI). If there is an issue with HAT2279H-EL-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HAT2279H-EL-E part is unused and in its original packaging.
Return procedure for HAT2279H-EL-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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