Renesas HS54095TZ-E

Overview

HS54095TZ-E from Renesas is a silicon N-channel MOSFET designed for high-voltage, low-current power switching in offline AC-DC converters and auxiliary power supplies. It features 600 V V_DSS, 13.5 Ω R_DS(on) at V_GS = 10 V, 0.2 A continuous drain current, and TO-92(1) package for compact through-hole mounting in flyback snubber or bias winding circuits.

For engineers reviewing the HS54095TZ-E datasheet, HS54095TZ-E pinout, HS54095TZ-E application, or HS54095TZ-E equivalent, key selection criteria include high-voltage blocking capability (600 V), low gate charge (4.8 nC), fast switching (t_d(off) = 51 ns), body diode recovery time (220 ns), and thermal resistance (θ_ch-a = 166.7 °C/W) in cost-sensitive, space-constrained auxiliary supply designs.

Technical Context

This device implements a high-voltage vertical DMOS structure optimized for low drive current and high-density mounting. Its 600 V breakdown voltage and ±30 V gate rating support direct connection to rectified mains in primary-side snubbers or startup circuits without level-shifting.

The MOSFET operates with a gate threshold of 3–5 V and exhibits 13.5–16.5 Ω on-resistance at 0.1 A and 10 V gate drive. Its 66 pF input capacitance and 1.3 pF reverse transfer capacitance enable predictable turn-on/turn-off timing under 10 Ω gate resistance and 3 kΩ load conditions.

Key Specifications

Pinout & Package

HS54095TZ-E uses the TO-92(1) through-hole package (RENESAS code PRSS0003DA-A, JEITA SC-43A), with 3 leads and 0.25 g typical mass. The package supports high-density manual or wave-solder assembly in compact auxiliary power stages.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage, low-current switching applications.

Compared with STP1NK60Z and IXTP01N60P, HS54095TZ-E offers the fastest documented turn-off delay (51 ns) and verified body diode recovery (220 ns), making it preferable in tightly timed snubber and self-oscillating auxiliary supply designs where timing predictability and freewheeling behavior are essential.

Availability

HS54095TZ-E is available at Aetrix Electronics and suitable for AC-DC auxiliary power supplies, flyback snubber circuits, isolated gate driver bias rails, and low-power startup circuits requiring stable component supply and long-term industrial availability.

Supply support for HS54095TZ-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and infrastructure markets.

The HS54095TZ-E belongs to Renesas' high-voltage discrete MOSFET product line, engineered specifically for reliable, low-cost switching in auxiliary power and protection circuits of offline power conversion systems.

FAQ

What is the maximum continuous drain current rating for HS54095TZ-E?

The HS54095TZ-E has a maximum continuous drain current (I_D) of 0.2 A at T_a = 25°C. This rating assumes adequate PCB copper area for heat dissipation; derating is required above ambient temperatures due to its 166.7 °C/W channel-to-ambient thermal impedance. The HS54095TZ-E is intended for low-duty-cycle or intermittent switching roles such as auxiliary supply control-not main power switching.

Does HS54095TZ-E include an integrated body diode, and what are its characteristics?

Yes, the HS54095TZ-E integrates a body-drain diode with forward voltage (V_DF) of 0.77 V (typ) at 0.2 A and reverse recovery time (t_rr) of 220 ns under specified test conditions (I_F = 0.2 A, di_F/dt = 50 A/µs). This diode enables freewheeling in self-oscillating or resonant auxiliary topologies without adding external components, and its defined t_rr supports predictable timing in snubber applications.

What is the gate threshold voltage range for HS54095TZ-E, and how does it affect drive requirements?

The HS54095TZ-E has a gate-to-source cutoff voltage (V_GS(off)) of 3–5 V, indicating reliable turn-on begins around 4 V. Its low 0.6 nC Q_gs and 4.8 nC total gate charge allow direct drive from microcontroller GPIOs or simple transistor buffers without dedicated gate drivers. This makes the HS54095TZ-E especially suitable for cost-sensitive, low-pin-count auxiliary control circuits where gate drive simplicity is critical.

Can HS54095TZ-E be used in surface-mount designs?

No-HS54095TZ-E is exclusively offered in the through-hole TO-92(1) package (RENESAS code PRSS0003DA-A). It lacks a surface-mount variant. Designers requiring SMT compatibility must select alternative high-voltage MOSFETs such as the SOP-8 packaged RJK0305DPB or DPAK-packaged TK090E06N1, which differ in pinout, thermal performance, and drive characteristics from the HS54095TZ-E.

What safety precautions apply when using HS54095TZ-E in high-voltage circuits?

Because the HS54095TZ-E features a 600 V drain-to-source rating, designers must observe strict creepage and clearance distances-especially between Drain and other terminals-to prevent arcing or electric discharge. The datasheet explicitly warns against insufficient isolation; minimum 2 mm PCB trace spacing and conformal coating are recommended. Also, the Drain terminal is not internally connected to the package tab, so mechanical mounting must avoid unintended grounding paths that could compromise high-voltage integrity in the HS54095TZ-E circuit.