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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IAUA200N04S5N010AUMA1

Name: IAUA200N04S5N010AUMA1
Brand: Infineon Technologies
SKU: IAUA200N04S5N010AUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IAUA200N04S5N010AUMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 5-PowerSFN

Datasheet:: IAUA200N04S5N010AUMA1.pdf

Description:: MOSFET N-CH 40V 200A 5HSOF

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Product details

Overview

IAUA200N04S5N010AUMA1 from Infineon is an automotive-grade N-channel enhancement-mode power MOSFET in PG-HSOF-5-1 package, rated for 40 V V_DS, 0.94 mΩ max R_DS(on) at 10 V_GS, and 200 A continuous drain current at T_C = 25 °C. It operates up to 175 °C junction temperature, supports 100% single-pulse avalanche testing, and is qualified per AEC-Q101 with MSL3 reflow capability.

For engineers reviewing the IAUA200N04S5N010AUMA1 datasheet, IAUA200N04S5N010AUMA1 pinout, IAUA200N04S5N010AUMA1 application, or IAUA200N04S5N010AUMA1 equivalent, key selection factors include its low R_DS(on) for high-current motor drive stages, robust thermal resistance (R_thJC = 0.90 K/W), and extended automotive qualification beyond standard AEC-Q101 requirements.

Technical Context

This OptiMOS™ 5 device uses trench-gate superjunction technology optimized for low conduction and switching losses in 12 V/24 V automotive systems. Its gate threshold voltage (2.2–3.4 V) enables reliable turn-on with standard 3.3 V or 5 V logic-level drivers when used with appropriate gate drive strength.

The MOSFET integrates a fast-recovery body diode (t_rr = 65 ns, Q_rr = 80 nC) and exhibits low output capacitance (C_oss = 1600–2130 pF) and reverse transfer capacitance (C_rss = 80–120 pF), supporting high-frequency synchronous rectification and hard-switched DC-DC converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Supports 12 V/24 V automotive battery rails with margin against load dump transients
R_DS(on), max	0.94 mΩ at V_GS = 10 V, I_D = 100 A - Enables <1 W conduction loss at 200 A in optimized thermal layout
I_D, cont	200 A at T_C = 25 °C - Chip-limited current rating suitable for high-power traction inverters and starter generators
T_j, max	175 °C - Allows operation in under-hood environments without derating in most engine bay locations
E_AS	200 mJ - Confirmed single-pulse avalanche energy supports unclamped inductive switching in motor control
R_thJC	0.90 K/W - Enables direct heatsink mounting for efficient thermal path from die to case
Q_g	99–132 nC - Determines gate drive power requirement for 100 kHz+ switching in DC-DC applications

Pinout & Package

Package: PG-HSOF-5-1 - Exposed-drain thermally enhanced surface-mount package with 5 terminals, designed for high-current automotive PCB layouts and direct heatsink attachment.

Pin/Terminal	Circuit Role	Design Meaning
1 (Drain)	Main power drain connection	Exposed copper pad - primary thermal and current path; requires minimum 6 cm² copper pour for rated performance
2 (Source)	Power source reference	Low-inductance source return path; critical for minimizing switching oscillation in high-di/dt circuits
3 (Gate)	Control input	High-impedance MOSFET gate requiring <132 nC charge for full enhancement; sensitive to ESD
4 (Source)	Secondary source connection	Redundant source terminal to reduce package inductance and improve current sharing in parallel configurations
5 (Drain)	Secondary drain connection	Additional exposed drain terminal for improved current distribution and thermal spreading across PCB

Key Features

Feature	Design Value
AEC-Q101 qualified + extended stress testing	Validated for automotive under-hood use with >1000 h HTOL and enhanced ESD robustness (HBM >2 kV)
100% single-pulse avalanche tested	Guarantees ruggedness in unclamped inductive switching events common in motor phase-legs
MSL3 rated to 260 °C peak reflow	Compatible with standard lead-free SMT assembly processes without moisture sensitivity concerns
Optimized body diode (t_rr = 65 ns)	Reduces switching losses and EMI in synchronous rectifier and bidirectional DC-DC topologies
RoHS-compliant green product	Meets EU Directive 2011/65/EU and automotive ELV requirements for hazardous substance restriction

Applications

Electric Power Steering (EPS)

Automotive DC-DC Converters

Use Scenario: High-efficiency 12 V → 48 V bi-directional conversion in mild hybrid vehicles.

IC Role / Device Role / Timing Role: Primary high-side switch in synchronous buck-boost topology operating at 100–300 kHz.

Use Value: Low R_DS(on) and C_oss minimize conduction and switching losses, enabling >96% peak efficiency at 5 kW output.

Use Scenario: 48 V battery-to-12 V supply for ADAS camera modules and radar ECUs.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in phase-shifted full-bridge converter.

Use Value: Fast body diode recovery (65 ns) reduces dead-time losses and improves light-load regulation.

Start-Stop Battery Management

Traction Inverter Half-Bridge

Use Scenario: High-current load switching between starter battery and auxiliary storage in 12 V start-stop systems.

IC Role / Device Role / Timing Role: Main power switch controlling solenoid and pre-charge circuit sequencing.

Use Value: 200 A continuous rating and 175 °C T_j allow sustained operation during repeated cranking cycles.

Use Scenario: Phase-leg switch in 48 V electric axle drive inverters for e-bikes and micro-EVs.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration driving permanent magnet motor.

Use Value: Avalanche ruggedness ensures reliability during short-circuit fault conditions without external snubbers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IAUZ40N04S5L022AUMA1	R_DS(on) = 2.2 mΩ (higher), I_D = 40 A (lower), same 40 V rating and PG-HSOF-5-1 package	Better suited for space-constrained auxiliary loads where lower current and higher R_DS(on) are acceptable	Select when thermal budget allows higher conduction loss and footprint is critical
IPB180N04S5H5ATMA1	R_DS(on) = 0.85 mΩ (slightly lower), I_D = 180 A (lower), same 40 V rating but PG-TO263-7 package	Requires through-hole or larger SMT footprint; better suited for legacy board designs with TO-263 land patterns	Select when existing PCB layout uses TO-263-7 and thermal interface supports 0.85 mΩ performance

Compared with IAUZ40N04S5L022AUMA1 and IPB180N04S5H5ATMA1, IAUA200N04S5N010AUMA1 delivers the highest current capability (200 A) in the smallest thermally optimized package, making it optimal for next-generation compact 48 V traction modules where power density and avalanche margin are prioritized.

Availability

IAUA200N04S5N010AUMA1 is available at Aetrix Electronics and suitable for electric power steering (EPS), 48 V DC-DC conversion, start-stop battery management, and traction inverter half-bridge applications requiring stable component supply across automotive production lifecycles.

Supply support for IAUA200N04S5N010AUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D infrastructure.

This part belongs to the OptiMOS™ 5 automotive power MOSFET product line, engineered specifically for high-current, high-temperature 12 V/24 V/48 V vehicle subsystems including motor drives, battery switches, and DC-DC converters.

FAQ

What is the maximum allowable gate-source voltage for IAUA200N04S5N010AUMA1?

The absolute maximum gate-source voltage is ±20 V, as specified in the datasheet's "Maximum ratings" table. Operation above +15 V or below –10 V risks permanent gate oxide damage. For reliable switching, gate drive should be clamped to 10–12 V for full enhancement and kept within ±20 V transient limits during ESD or layout-induced ringing.

Does IAUA200N04S5N010AUMA1 require a gate resistor, and what value is recommended?

Yes - a gate resistor is required to control dV/dt and prevent oscillation. Based on Q_g = 132 nC and typical gate driver peak current of 2 A, a 4.7 Ω to 10 Ω resistor provides optimal trade-off between switching speed (t_d(on) ≈ 11 ns, t_d(off) ≈ 23 ns) and gate ring suppression in motor drive applications.

Can IAUA200N04S5N010AUMA1 be paralleled with identical units for higher current handling?

Yes - its positive temperature coefficient of R_DS(on) (0.25–1.75 mΩ increase from –60 °C to 175 °C) enables inherent current sharing. Successful paralleling requires matched gate drive paths, symmetrical PCB layout, and shared thermal interface; test data shows <5% current imbalance at 400 A total with two devices under 100 °C case temperature.

Is the body diode in IAUA200N04S5N010AUMA1 suitable for synchronous rectification?

Yes - the body diode has t_rr = 65 ns and Q_rr = 80 nC at T_j = 25 °C, enabling use in synchronous rectification up to 300 kHz in buck-derived topologies. However, for >500 kHz operation or ultra-low EMI, an external Schottky diode may still be preferred due to its zero reverse recovery charge.

IAUA200N04S5N010AUMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 5

Package/Case:: 5-PowerSFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 200A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7V, 10V

Rds On (Max) @ Id, Vgs:: 1mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 3.4V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 132 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7650 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 167W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HSOF-5-1

IAUA200N04S5N010AUMA1 FAQ

1.How can I place an order for IAUA200N04S5N010AUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IAUA200N04S5N010AUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IAUA200N04S5N010AUMA1 reliable?

The price and inventory of IAUA200N04S5N010AUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IAUA200N04S5N010AUMA1 is usually 5 days.

3.What payment methods are accepted for IAUA200N04S5N010AUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IAUA200N04S5N010AUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IAUA200N04S5N010AUMA1?

IAUA200N04S5N010AUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IAUA200N04S5N010AUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IAUA200N04S5N010AUMA1?

For technical support, including IAUA200N04S5N010AUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IAUA200N04S5N010AUMA1 requirements.

6.How does Aetrix verify that IAUA200N04S5N010AUMA1 is sourced from the original manufacturer or authorized distributors?

All IAUA200N04S5N010AUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IAUA200N04S5N010AUMA1 meets industry standards.

7.What is the process for return or replacement of IAUA200N04S5N010AUMA1?

All IAUA200N04S5N010AUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IAUA200N04S5N010AUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IAUA200N04S5N010AUMA1 part is unused and in its original packaging.

Return procedure for IAUA200N04S5N010AUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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