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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IAUC100N04S6N028ATMA1

Name: IAUC100N04S6N028ATMA1
Brand: Infineon Technologies
SKU: IAUC100N04S6N028ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IAUC100N04S6N028ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: IAUC100N04S6N028ATMA1.pdf

Description:: IAUC100N04S6N028ATMA1

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Product details

Overview

IAUC100N04S6N028ATMA1 from Infineon Technologies is an AEC-Q101-qualified N-channel enhancement-mode power MOSFET in PG-TDSON-8 package, rated for 40 V V_DS, 2.8 mΩ R_DS(on) at V_GS = 10 V, and 100 A continuous drain current at T_C = 25 °C. It operates up to 175 °C junction temperature and is 100% avalanche tested for automotive motor control and DC-DC converter applications.

For engineers reviewing the IAUC100N04S6N028ATMA1 datasheet, IAUC100N04S6N028ATMA1 pinout, IAUC100N04S6N028ATMA1 application, or IAUC100N04S6N028ATMA1 equivalent, key selection criteria include R_DS(on) stability over temperature, single-pulse avalanche energy (85 mJ), gate charge profile (Q_g = 22–29 nC), and MSL1 reflow compatibility.

Technical Context

This OptiMOS™-6 device uses trench-gate superjunction technology optimized for low conduction and switching losses in 12 V automotive systems. Its gate plateau voltage of 4.6 V enables robust drive margin with standard 5 V logic-level controllers, while its 2.4 K/W R_thJC supports high-current thermal management on compact PCB layouts.

The integrated body diode exhibits 0.8–1.1 V forward voltage at 50 A and 25 °C, with t_rr = 30 ns and Q_rr = 15 nC under defined conditions, enabling efficient synchronous rectification and freewheeling in half-bridge topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage compatible with 12 V automotive battery systems including load dump transients.
R_DS(on) max	2.8 mΩ at V_GS = 10 V, I_D = 50 A - Enables <1.4 W conduction loss at 100 A, critical for high-efficiency motor drivers.
I_D cont	100 A at T_C = 25 °C - Package-limited current rating supporting high-power traction inverters and starter generators.
E_AS	85 mJ at I_D = 20 A, R_G,min = 25 Ω - Confirmed single-pulse avalanche ruggedness for inductive switching reliability.
Q_g	22–29 nC - Low total gate charge reduces driver power demand and enables fast 4–9 ns switching transitions.
T_j max	175 °C - Extended junction temperature rating ensures operation in under-hood environments without derating.
R_thJC	2.4 K/W - Enables direct heatsink mounting for high-power density designs with minimal thermal interface resistance.

Pinout & Package

PG-TDSON-8 (exposed drain pad) package with 3.3 mm × 3.3 mm footprint and 0.55 mm height. Thermal performance relies on soldered drain pad area for heat transfer to PCB copper or external heatsink.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8 (Drain Pad)	Power Drain / Thermal Path	Monolithic copper-exposed bottom pad carrying full drain current and serving as primary thermal conduction path to PCB.
1 (Source)	Source Terminal	Top-side source connection for gate driver return and current sensing reference point.
2 (Gate)	Control Input	Low-capacitance gate terminal requiring <3.5 Ω series resistance to limit dV/dt-induced shoot-through in bridge configurations.
3 (Source)	Source Terminal	Redundant top-side source bond for reduced source inductance in high-di/dt applications.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive-grade reliability across temperature cycling, humidity, and mechanical stress per JESD47.
MSL1 rating	Compatible with lead-free reflow up to 260 °C peak, eliminating moisture sensitivity handling requirements.
100% avalanche tested	Each unit subjected to controlled single-pulse avalanche stress, ensuring guaranteed ruggedness in inductive loads.
OptiMOS™-6 trench technology	Delivers 15% lower R_DS(on) × Q_g figure-of-merit vs. prior generation, reducing combined conduction/switching loss.

Applications

Electric Power Steering (EPS)

Automotive DC-DC Converters

Use Scenario: High-current H-bridge driving 3-phase brushless motor in steering assist module.

IC Role / Device Role / Timing Role: Low-side and high-side switching element in 12 V to 48 V bidirectional buck-boost converter stage.

Use Value: 2.8 mΩ R_DS(on) minimizes resistive loss during continuous 80–100 A operation, reducing thermal load on compact EPS housing.

Use Scenario: Primary-side synchronous rectifier in isolated 12 V to 48 V DC-DC converter for 48 V mild hybrid systems.

IC Role / Device Role / Timing Role: Main power switch in phase-shifted full-bridge topology operating at 100–200 kHz.

Use Value: 85 mJ E_AS withstands voltage spikes during zero-voltage switching transitions, improving system reliability.

Start-Stop Battery Management

On-Board Charger (OBC) Auxiliary Supplies

Use Scenario: Load switch controlling auxiliary 12 V rail during engine cranking events.

IC Role / Device Role / Timing Role: High-current power distribution switch with fast turn-on (<9 ns) for seamless power handover.

Use Value: 175 °C T_j max allows uninterrupted operation during sustained 150 °C under-hood ambient conditions.

Use Scenario: Secondary-side synchronous rectifier in 12 V auxiliary supply derived from OBC's main transformer.

IC Role / Device Role / Timing Role: Low-loss freewheeling diode replacement with 0.8–1.1 V V_SD and 30 ns t_rr.

Use Value: Reduced reverse recovery charge (Q_rr = 15 nC) cuts switching loss by >30% vs. discrete Schottky alternatives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IAUZ40N04S5N012ATMA1	Lower R_DS(on) (1.2 mΩ), smaller 40 A rating, same PG-TDSON-8 package.	Better suited for space-constrained 40 A applications where thermal budget permits higher current density.	Select when lower conduction loss dominates over peak current capability.
IPB180N04S4-02	Higher R_DS(on) (2.0 mΩ), TO-263-7 package, 180 A rating, no AEC-Q101 certification.	Industrial-grade alternative lacking automotive qualification but offering higher current headroom.	Select only for non-automotive industrial motor drives requiring >100 A continuous current.

Compared with IAUZ40N04S5N012ATMA1 and IPB180N04S4-02, IAUC100N04S6N028ATMA1 uniquely balances 100 A current delivery, 2.8 mΩ on-resistance, AEC-Q101 compliance, and MSL1 reflow readiness-making it optimal for volume automotive power stages where qualification, thermal density, and manufacturability are jointly critical.

Availability

IAUC100N04S6N028ATMA1 is available at Aetrix Electronics and suitable for electric power steering, automotive DC-DC converters, and start-stop battery management systems requiring stable component supply across extended production lifecycles.

Supply support for IAUC100N04S6N028ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS™-6 product line, engineered specifically for high-efficiency, high-reliability 12 V automotive power conversion and motor control applications demanding AEC-Q101 compliance and extended temperature operation.

FAQ

What is the maximum allowable gate-source voltage for IAUC100N04S6N028ATMA1?

The absolute maximum gate-source voltage is ±20 V, with recommended operating range limited to -10 V to +15 V for reliable long-term performance. Exceeding ±20 V risks permanent gate oxide damage, and operation above +15 V provides diminishing R_DS(on) improvement while increasing gate driver stress.

Does IAUC100N04S6N028ATMA1 include an integrated body diode?

Yes-it features a monolithic parasitic body diode with V_SD = 0.8–1.1 V at 50 A and 25 °C, t_rr = 30 ns, and Q_rr = 15 nC. This diode is fully characterized and rated for continuous forward current up to 100 A, enabling use in freewheeling and synchronous rectification roles without external diodes.

How is thermal performance validated for this MOSFET?

Thermal resistance is specified as R_thJC = 2.4 K/W (junction-to-case) under standardized test conditions using a 6 cm² copper area on FR4 PCB. This value is verified via transient dual-interface testing per JEDEC JESD51-14 and correlates directly to measurable case temperature rise under real-world mounting conditions.

Can IAUC100N04S6N028ATMA1 be used in non-automotive applications?

Yes-its 40 V rating, 100 A capability, and 175 °C operation make it suitable for industrial motor drives and telecom power supplies. However, AEC-Q101 qualification adds cost and test overhead; for non-automotive use, consider evaluating non-automotive equivalents like IPB180N04S4-02 if qualification is unnecessary.

IAUC100N04S6N028ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7V, 10V

Rds On (Max) @ Id, Vgs:: 2.86mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 3V @ 24µA

Gate Charge (Qg) (Max) @ Vgs:: 29 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1781 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 62W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8

IAUC100N04S6N028ATMA1 FAQ

1.How can I place an order for IAUC100N04S6N028ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IAUC100N04S6N028ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IAUC100N04S6N028ATMA1 reliable?

The price and inventory of IAUC100N04S6N028ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IAUC100N04S6N028ATMA1 is usually 5 days.

3.What payment methods are accepted for IAUC100N04S6N028ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IAUC100N04S6N028ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IAUC100N04S6N028ATMA1?

IAUC100N04S6N028ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IAUC100N04S6N028ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IAUC100N04S6N028ATMA1?

For technical support, including IAUC100N04S6N028ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IAUC100N04S6N028ATMA1 requirements.

6.How does Aetrix verify that IAUC100N04S6N028ATMA1 is sourced from the original manufacturer or authorized distributors?

All IAUC100N04S6N028ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IAUC100N04S6N028ATMA1 meets industry standards.

7.What is the process for return or replacement of IAUC100N04S6N028ATMA1?

All IAUC100N04S6N028ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IAUC100N04S6N028ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IAUC100N04S6N028ATMA1 part is unused and in its original packaging.

Return procedure for IAUC100N04S6N028ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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