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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IAUC120N04S6L009ATMA1

Name: IAUC120N04S6L009ATMA1
Brand: Infineon Technologies
SKU: IAUC120N04S6L009ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IAUC120N04S6L009ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: IAUC120N04S6L009ATMA1.pdf

Description:: MOSFET N-CH 40V 150A TDSON-8-34

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Product details

Overview

IAUC120N04S6L009ATMA1 from Infineon Technologies is an AEC-Q101-qualified N-channel logic-level power MOSFET in PG-TDSON-8 package, rated for 40 V V_DS, 0.9 mΩ R_DS(on) at V_GS = 10 V, and 120 A continuous drain current at T_C = 25 °C. It operates up to 175 °C junction temperature and is 100% avalanche tested for automotive powertrain and body control modules.

For engineers reviewing the IAUC120N04S6L009ATMA1 datasheet, IAUC120N04S6L009ATMA1 pinout, IAUC120N04S6L009ATMA1 application, or IAUC120N04S6L009ATMA1 equivalent, key selection criteria include R_DS(on) at 4.5 V gate drive, single-pulse avalanche energy (400 mJ), thermal resistance (R_thJC = 1.0 K/W), and MSL1 reflow compatibility.

Technical Context

This OptiMOS™-6 device uses trench-gate superjunction technology optimized for low conduction and switching losses in 12 V automotive systems. Its logic-level gate threshold (1.2–2.0 V) enables direct drive from microcontrollers, and its integrated body diode supports synchronous rectification with t_rr = 66 ns and Q_rr = 85 nC.

The MOSFET features a thermally enhanced PG-TDSON-8 package with exposed drain pad for low-inductance, high-current PCB mounting. Its safe operating area (SOA) supports pulsed currents up to 480 A and avalanche ruggedness up to 400 mJ under defined test conditions (I_D = 60 A, R_G,min = 25 Ω).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage for 12 V battery rail applications including start-stop and load-dump scenarios.
R_DS(on) max @ V_GS = 10 V	0.96 mΩ - Enables <1 W conduction loss at 120 A, critical for high-efficiency motor drivers and DC-DC stages.
R_DS(on) max @ V_GS = 4.5 V	1.2 mΩ - Ensures robust turn-on with standard 3.3/5 V MCU GPIOs without level-shifting circuitry.
I_D continuous @ T_C = 25 °C	120 A - Package-limited current rating; supported by 1.0 K/W junction-to-case thermal path.
E_AS	400 mJ - Single-pulse avalanche energy rating verified per JEDEC JESD24-1, enabling reliable operation during inductive switching transients.
t_rr	66 ns - Fast reverse recovery time of integrated body diode reduces switching loss and EMI in half-bridge configurations.
T_j max	+175 °C - Extended junction temperature range allows placement near heat sources in engine bay ECUs.

Pinout & Package

PG-TDSON-8 (exposed drain pad) package with 0.65 mm pitch, RoHS-compliant, MSL1 rated for peak reflow at 260 °C. Thermal performance optimized via bottom-side copper area connection.

Pin/Terminal	Circuit Role	Design Meaning
1–3, 5–7	Source	Common source terminals; low-inductance parallel routing required for high di/dt stability.
4	Gate	Logic-level input; requires gate resistor (R_G ≥ 25 Ω) to limit dv/dt and suppress oscillation.
8	Drain (exposed pad)	Primary current path and thermal interface; must be soldered to large PCB copper pour for thermal management.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive use across temperature, humidity, and mechanical stress profiles per ISO/TS 16949.
100% avalanche tested	Each unit subjected to single-pulse avalanche stress at I_AS = 60 A, ensuring SOA margin in real-world inductive loads.
Logic-level gate drive	V_GS(th) = 1.2–2.0 V enables direct interface with 3.3 V/5 V MCUs-no external driver needed for moderate-speed switching.
Green Product (RoHS)	Lead-free, halogen-free construction compliant with EU Directive 2011/65/EU and automotive ELV requirements.
Low Q_gd/Q_g ratio	Q_gd = 18–27 nC / Q_g = 97–128 nC improves Miller immunity and enables stable hard-switching up to 100 kHz.

Applications

Electric Power Steering (EPS)

Automotive Body Control Module (BCM)

Use Scenario: High-current H-bridge motor driver controlling 12 V EPS assist motor during steering maneuvers.

IC Role / Device Role / Timing Role: Low-side and high-side switching element with fast t_f = 19 ns and low R_DS(on) to minimize I²R loss during sustained torque demand.

Use Value: 0.9 mΩ R_DS(on) limits conduction loss to <1.3 W at 120 A, reducing heatsink size and improving system efficiency over legacy 1.5 mΩ devices.

Use Scenario: Load switching for headlights, fog lamps, and HVAC blowers in centralized BCM architecture.

IC Role / Device Role / Timing Role: High-current discrete switch replacing electromechanical relays; driven directly by 5 V MCU outputs.

Use Value: Logic-level V_GS(th) and 120 A rating enable single-device replacement of dual-relay solutions, reducing PCB area and contact wear failure modes.

Start-Stop Battery Management

On-Board Charger (OBC) Auxiliary DC-DC

Use Scenario: Bidirectional power switch in 12 V battery isolation circuits managing regenerative braking energy and cold-cranking support.

IC Role / Device Role / Timing Role: Synchronous rectifier in buck-boost converter stage; leverages low Q_rr = 85 nC and fast t_rr = 66 ns for minimal reverse recovery loss.

Use Value: Integrated body diode eliminates need for external Schottky, cutting BOM count and parasitic inductance in high-frequency (<200 kHz) converters.

Use Scenario: Primary-side switch in auxiliary 12 V DC-DC converter powering OBC control logic and gate drivers.

IC Role / Device Role / Timing Role: Hard-switched MOSFET operating at 100 kHz with V_DD = 32 V, requiring low C_oss (1640–2132 pF) and high E_AS margin.

Use Value: 400 mJ avalanche rating ensures reliability during line transients (e.g., load dump), while R_thJC = 1.0 K/W enables >150 W dissipation with minimal heatsinking.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IAUZ40N04S5L022ATMA1	Higher R_DS(on) (2.2 mΩ @ 10 V), lower I_D (40 A), same PG-TDSON-8 package.	Better suited for space-constrained, lower-current nodes (e.g., seat/mirror control) where thermal budget is tighter.	Select when peak current ≤ 40 A and board area is premium; not suitable for EPS or BCM main loads.
IPB180N04S4H5ATMA1	Same V_DS (40 V), higher R_DS(on) (0.95 mΩ), higher I_D (180 A), larger TO-263-7 package.	Requires larger PCB footprint and different thermal layout; rated for higher continuous current in industrial-grade designs.	Choose for applications needing >120 A continuous current or extended lifetime under 150 °C ambient; not drop-in compatible due to package mismatch.

Compared with IAUZ40N04S5L022ATMA1 and IPB180N04S4H5ATMA1, IAUC120N04S6L009ATMA1 delivers optimal balance of ultra-low R_DS(on), logic-level drive, and compact PG-TDSON-8 packaging-making it the preferred choice for high-density, high-current automotive power stages where thermal and gate-drive constraints are critical.

Availability

IAUC120N04S6L009ATMA1 is available at Aetrix Electronics and suitable for electric power steering (EPS), body control modules (BCM), and start-stop battery management systems requiring stable component supply and AEC-Q101 compliance.

Supply support for IAUC120N04S6L009ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS™-6 product line, engineered specifically for high-efficiency, high-reliability 12 V automotive power conversion-targeting reduced conduction loss, improved thermal robustness, and simplified gate drive in next-generation ECU designs.

FAQ

What is the maximum allowable gate-source voltage for IAUC120N04S6L009ATMA1?

The absolute maximum gate-source voltage is ±16 V. Operation beyond this rating risks permanent gate oxide damage. For reliable long-term performance, gate drive should be limited to 10–12 V during normal switching, with transient spikes clamped using Zener diodes or active gate drivers.

Does IAUC120N04S6L009ATMA1 require a gate resistor, and if so, what value is recommended?

Yes-a minimum gate resistor of 25 Ω is specified to limit dv/dt and prevent oscillation during turn-on/off. For 100 kHz switching in a half-bridge, a 3.5 Ω resistor is used in characterization; actual value depends on driver strength and layout parasitics, but must ensure gate ring-up time stays within datasheet-specified t_d(on) and t_r limits.

Can IAUC120N04S6L009ATMA1 be used in synchronous rectification mode?

Yes-the integrated body diode has characterized t_rr = 66 ns and Q_rr = 85 nC at T_j = 25 °C, enabling controlled synchronous rectification in buck or LLC topologies. However, external FET control timing must account for diode reverse recovery to avoid shoot-through.

Is the PG-TDSON-8 package lead-free and compatible with standard reflow profiles?

Yes-the device is RoHS-compliant and MSL1 rated for peak reflow temperatures up to 260 °C. The package uses lead-free terminations and meets IPC/JEDEC J-STD-020D moisture sensitivity requirements, allowing standard Pb-free reflow without pre-baking.

IAUC120N04S6L009ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 6

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 150A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 960mOhm @ 60A, 10V

Vgs(th) (Max) @ Id:: 2V @ 90µA

Gate Charge (Qg) (Max) @ Vgs:: 128 nC @ 10 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 7806 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 150W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8-34

IAUC120N04S6L009ATMA1 FAQ

1.How can I place an order for IAUC120N04S6L009ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IAUC120N04S6L009ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IAUC120N04S6L009ATMA1 reliable?

The price and inventory of IAUC120N04S6L009ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IAUC120N04S6L009ATMA1 is usually 5 days.

3.What payment methods are accepted for IAUC120N04S6L009ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IAUC120N04S6L009ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IAUC120N04S6L009ATMA1?

IAUC120N04S6L009ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IAUC120N04S6L009ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IAUC120N04S6L009ATMA1?

For technical support, including IAUC120N04S6L009ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IAUC120N04S6L009ATMA1 requirements.

6.How does Aetrix verify that IAUC120N04S6L009ATMA1 is sourced from the original manufacturer or authorized distributors?

All IAUC120N04S6L009ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IAUC120N04S6L009ATMA1 meets industry standards.

7.What is the process for return or replacement of IAUC120N04S6L009ATMA1?

All IAUC120N04S6L009ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IAUC120N04S6L009ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IAUC120N04S6L009ATMA1 part is unused and in its original packaging.

Return procedure for IAUC120N04S6L009ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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