Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IAUC45N04S6L063HATMA1

Part No.:
IAUC45N04S6L063HATMA1
Manufacturer:
Infineon Technologies
Category:
FET, MOSFET Arrays
Package:
8-PowerVDFN
Datasheet:
AetrixIAUC45N04S6L063HATMA1.pdf
Description:
MOSFET 2N-CH 40V 45A 8TDSON
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,925

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IAUC45N04S6L063H from Infineon Technologies is an AEC-Q101-qualified N-channel logic-level power MOSFET in PG-TDSON-8-57 package, rated for 40 V VDS, 6.3 mΩ RDS(on) at VGS = 10 V, and 45 A continuous drain current at TC = 85 °C. It serves as a half-bridge high-side or low-side switch in automotive motor control and DC-DC converters.

For engineers reviewing the IAUC45N04S6L063H datasheet, IAUC45N04S6L063H pinout, IAUC45N04S6L063H application, or IAUC45N04S6L063H equivalent, key selection criteria include its 175 °C operating temperature, 100% avalanche tested ruggedness, 3.7 K/W RthJC, and logic-level gate drive compatibility with 4.5 V microcontrollers.

Technical Context

This OptiMOS™-6 device uses trench-based silicon technology optimized for low conduction and switching losses in automotive 12 V systems. Its gate threshold voltage (1.2–2.0 V) enables reliable turn-on with standard logic-level drivers, while its 7.4 mΩ RDS(on) at VGS = 4.5 V supports efficient operation in battery-powered ECUs.

The MOSFET integrates a robust body diode with 20 ns trr and 8 nC Qrr, enabling fast freewheeling in synchronous rectification. Its MSL1 rating and 260 °C peak reflow tolerance ensure compatibility with lead-free PCB assembly processes.

Key Specifications

ParameterValue and Actual Design Meaning
VDS40 V - Maximum blocking voltage for 12 V automotive battery rail applications with transient margin.
RDS(on) max @ VGS=10 V6.3 mΩ - Enables ≤1.4 W conduction loss at 45 A, reducing heatsink requirements.
ID continuous @ TC=85 °C45 A - Sustains full-load current in compact motor driver modules without derating.
EAS single pulse38 mJ - Withstands inductive energy spikes in solenoid and BLDC phase-leg switching.
RthJC3.7 K/W - Supports direct thermal coupling to copper pads or heatsinks for high-power density layouts.
Qg total10–13 nC - Low gate charge enables fast switching with <10 ns rise/fall times using 3.5 Ω gate resistor.
trr20 ns - Minimizes reverse recovery losses during hard commutation in half-bridge configurations.
VGS(th)1.2–2.0 V - Ensures stable turn-on with 3.3 V/5 V MCU GPIOs without level-shifting circuitry.

Pinout & Package

PG-TDSON-8-57 is a thermally enhanced 8-pin surface-mount package with exposed drain pad (pins 1–3, 5–8 = source; pin 4 = gate; pin 6 = drain tab). The footprint complies with JEDEC MO-263AB and enables low-inductance, high-current routing.

Pin/TerminalCircuit RoleDesign Meaning
1,2,3,5,7,8SourceCommon source connection for dual-channel half-bridge layout; low-inductance parallel routing reduces shoot-through risk.
4GateLogic-level input requiring <13 nC total charge; isolated from drain by 16 V max VGS rating.
6Drain (exposed pad)Main power output node; soldered to large copper pour for thermal dissipation and EMI suppression.

Key Features

FeatureDesign Value
AEC-Q101 qualificationValidated for automotive under-hood environments including temperature cycling, humidity, and mechanical shock per ISO 16750.
100% unclamped inductive switching (UIS) testedGuarantees single-pulse avalanche robustness up to 38 mJ at 175 °C junction temperature.
Logic-level gate drive (VGS(th) ≤ 2.0 V)Eliminates need for external gate drivers when interfaced with 3.3 V or 5 V microcontrollers.
Green Product (RoHS compliant)Lead-free, halogen-free, and compliant with EU Directive 2011/65/EU and China RoHS II.
MSL1 rating (260 °C peak reflow)Supports standard lead-free SMT assembly without moisture sensitivity concerns or baking requirements.

Applications

Electric Power Steering (EPS)Automotive HVAC Blower Control

Use Scenario: High-efficiency three-phase inverter driving brushless DC motor in steering assist module.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge topology with precise PWM-controlled current regulation.

Use Value: 6.3 mΩ RDS(on) minimizes I²R losses during continuous 30–40 A phase current, extending ECU thermal margin.

Use Scenario: Single-phase H-bridge controlling bidirectional 24 V DC blower motor in climate control system.

IC Role / Device Role / Timing Role: High-side and low-side switching element with fast 20 ns diode recovery for smooth direction reversal.

Use Value: 38 mJ avalanche energy rating prevents failure during motor stall or sudden load transients.

12 V DC-DC Converter (Step-down)Automotive LED Headlamp Driver

Use Scenario: Synchronous buck converter supplying 5 V/3 A to ADAS camera module from vehicle battery.

IC Role / Device Role / Timing Role: High-side power switch with 13 nC Qg enabling 500 kHz switching without excessive gate drive loss.

Use Value: 7.4 mΩ RDS(on) at 4.5 V gate drive allows direct MCU control and improves light-load efficiency.

Use Scenario: Constant-current driver regulating 1.2 A through high-brightness LED arrays in adaptive front lighting.

IC Role / Device Role / Timing Role: PWM-controlled current sink with integrated body diode for flyback energy recirculation.

Use Value: 175 °C rated junction temperature ensures reliability in sealed headlamp enclosures with minimal airflow.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STL220N4LF8AG40 V, 2.2 mΩ RDS(on) @ 10 V, but 8 mm × 8 mm PowerFLAT™ 8x8 package vs. PG-TDSON-8-57's 5.15 mm × 6.25 mm footprint.Higher current capability (220 A pulsed), but larger board area and higher gate charge (29 nC).Prefer for ultra-low RDS(on) needs where space and gate drive strength permit.
ON Semiconductor NTMFS4C09NT1G40 V, 7.0 mΩ RDS(on) @ 10 V, same PG-TDSON-8 package, but only AEC-Q101 qualified at Tj ≤ 150 °C (not 175 °C).Limited high-temperature operation in under-hood locations exceeding 150 °C ambient.Select when cost sensitivity outweighs extended thermal margin requirement.

Compared with STL220N4LF8AG and NTMFS4C09NT1G, IAUC45N04S6L063H delivers optimal balance of compact size, 175 °C operation, and logic-level drive-critical for space-constrained, high-reliability automotive modules where thermal headroom and MCU compatibility are prioritized over absolute lowest RDS(on).

Availability

IAUC45N04S6L063H is available at Aetrix Electronics and suitable for electric power steering, HVAC blower control, and 12 V DC-DC converter designs requiring stable component supply across automotive production lifecycles.

Supply support for IAUC45N04S6L063H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification aligned to IATF 16949.

This part belongs to the OptiMOS™-6 product line, engineered specifically for high-efficiency, high-reliability switching in 12 V automotive subsystems-including motor drives, lighting, and power conversion-where thermal robustness and logic-level compatibility are essential.

FAQ

What is the maximum allowable gate-source voltage for IAUC45N04S6L063H?

The absolute maximum VGS is ±16 V, as specified in the Absolute Maximum Ratings table. Exceeding this value risks permanent gate oxide damage. For reliable operation, gate drive circuits must clamp voltage within this limit using Zener diodes or active clamping, especially during fast switching transients or ESD events.

Can IAUC45N04S6L063H be used in parallel configurations?

Yes-its positive temperature coefficient of RDS(on) (increasing resistance with junction temperature) enables inherent current sharing. Successful parallel operation requires matched gate drive impedance, symmetrical PCB layout, and thermal coupling via shared copper pour to minimize thermal imbalance between devices.

Is the body diode suitable for continuous freewheeling in synchronous rectification?

Yes-the integrated body diode is rated for 45 A continuous forward current at TC = 25 °C and exhibits 0.85–1.1 V VSD at 22 A and 25 °C. Its 20 ns trr and low Qrr (8 nC) make it appropriate for high-frequency synchronous rectification in buck converters up to 1 MHz.

Does IAUC45N04S6L063H require a gate resistor for safe operation?

Yes-a gate resistor (typically 3.5 Ω for 10–13 nC Qg) is required to control dV/dt and prevent parasitic oscillation or shoot-through in bridge configurations. The resistor also limits peak gate current during switching and dampens ringing caused by PCB trace inductance and gate capacitance interaction.

IAUC45N04S6L063HATMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™
Package/Case:
8-PowerVDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Half Bridge)
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
40V
Current - Continuous Drain (Id) @ 25°C:
45A (Tj)
Rds On (Max) @ Id, Vgs:
6.3mOhm @ 22A, 10V
Vgs(th) (Max) @ Id:
2V @ 9µA
Gate Charge (Qg) (Max) @ Vgs:
13nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
775pF @ 25V
Power - Max:
41W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TDSON-8-57

IAUC45N04S6L063HATMA1 FAQ

1.How can I place an order for IAUC45N04S6L063HATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IAUC45N04S6L063HATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IAUC45N04S6L063HATMA1 reliable?

The price and inventory of IAUC45N04S6L063HATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IAUC45N04S6L063HATMA1 is usually 5 days.

3.What payment methods are accepted for IAUC45N04S6L063HATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IAUC45N04S6L063HATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IAUC45N04S6L063HATMA1?

IAUC45N04S6L063HATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IAUC45N04S6L063HATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IAUC45N04S6L063HATMA1?

For technical support, including IAUC45N04S6L063HATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IAUC45N04S6L063HATMA1 requirements.

6.How does Aetrix verify that IAUC45N04S6L063HATMA1 is sourced from the original manufacturer or authorized distributors?

All IAUC45N04S6L063HATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IAUC45N04S6L063HATMA1 meets industry standards.

7.What is the process for return or replacement of IAUC45N04S6L063HATMA1?

All IAUC45N04S6L063HATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IAUC45N04S6L063HATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IAUC45N04S6L063HATMA1 part is unused and in its original packaging.

Return procedure for IAUC45N04S6L063HATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IAUC45N04S6L063HATMA1 Tags

  • IAUC45N04S6L063HATMA1
  • IAUC45N04S6L063HATMA1 PDF
  • IAUC45N04S6L063HATMA1 Datasheet
  • IAUC45N04S6L063HATMA1 Specifications
  • IAUC45N04S6L063HATMA1 Images
  • Infineon Technologies
  • Infineon Technologies IAUC45N04S6L063HATMA1
  • Buy IAUC45N04S6L063HATMA1
  • IAUC45N04S6L063HATMA1 Price
  • IAUC45N04S6L063HATMA1 Distributor
  • IAUC45N04S6L063HATMA1 Supplier
  • IAUC45N04S6L063HATMA1 Wholesale
Related Products
SSM6N7002KFU,LF
SSM6N7002KFU,LF

Toshiba Semiconductor and Storage

2N7002DW-7-F
2N7002DW-7-F

Diodes Incorporated

SSM6L56FE,LM
SSM6L56FE,LM

Toshiba Semiconductor and Storage

SSM6N37FU,LF
SSM6N37FU,LF

Toshiba Semiconductor and Storage

2N7002DWH6327XTSA1
2N7002DWH6327XTSA1

Infineon Technologies

2N7002BKS,115
2N7002BKS,115

Nexperia USA Inc.

DMG1016UDW-7
DMG1016UDW-7

Diodes Incorporated

UM6K33NTN
UM6K33NTN

Rohm Semiconductor

DMG6602SVT-7
DMG6602SVT-7

Diodes Incorporated

EM6K34T2CR
EM6K34T2CR

Rohm Semiconductor

UM6K34NTCN
UM6K34NTCN

Rohm Semiconductor

DMG6601LVT-7
DMG6601LVT-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER