Infineon Technologies IAUC60N04S6L030HATMA1

Overview

IAUC60N04S6L030HATMA1 from Infineon Technologies is an AEC-Q101 qualified N-channel logic-level power MOSFET in PG-TDSON-8-56 package, designed for half-bridge automotive power stages. It delivers 60 A DC current at T_C = 85°C, features 3.0 mΩ max R_DS(on) at V_GS = 10 V, supports 40 V V_DS, and operates up to 175°C junction temperature - used in electric power steering (EPS) motor drivers and 12 V battery-connected DC-DC converters.

For engineers reviewing the IAUC60N04S6L030HATMA1 datasheet, IAUC60N04S6L030HATMA1 pinout, IAUC60N04S6L030HATMA1 application, or IAUC60N04S6L030HATMA1 equivalent, key selection criteria include its 3.0 mΩ on-resistance at 10 V gate drive, 100% avalanche-tested ruggedness, MSL1 reflow compatibility, and validated performance under 175°C continuous operation in automotive engine bay environments.

Technical Context

This OptiMOS™-6 device implements a trench-based silicon MOSFET structure optimized for low conduction and switching losses in high-frequency half-bridge topologies. Its gate threshold voltage (1.2–2.0 V) enables direct logic-level drive from automotive microcontrollers, while its 2.0 K/W R_thJC supports high-power density thermal design on FR4 PCBs with 2s2p layout per JEDEC JESD51-5/7.

The MOSFET integrates a co-packaged body diode with 0.85–1.1 V forward voltage at 30 A and 30 ns reverse recovery time under 100 A/µs di/dt - enabling efficient synchronous rectification and freewheeling in bidirectional motor control and regenerative braking circuits.

Key Specifications

Pinout & Package

PG-TDSON-8-56 is a thermally enhanced 8-pin exposed-pad surface-mount package with dual drain-source source-drain pinout symmetry for half-bridge layout. The exposed thermal pad (Pin 8) must be soldered to a dedicated PCB copper pour for optimal heat transfer.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Compared with IAUZ40N04S5L029H and IPB180N04S4-02, IAUC60N04S6L030HATMA1 uniquely balances 60 A DC current, 3.0 mΩ on-resistance, full AEC-Q101 compliance, and MSL1 reflow support - making it the only option qualified for high-reliability, thermally dense automotive half-bridge designs requiring both sustained current and transient ruggedness.

Availability

IAUC60N04S6L030HATMA1 is available at Aetrix Electronics and suitable for electric power steering (EPS), brake-by-wire actuators, and automotive DC-DC converters requiring stable component supply across multi-year vehicle production cycles.

Supply support for IAUC60N04S6L030HATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification aligned to IATF 16949.

This device belongs to the OptiMOS™-6 product line, engineered specifically for high-efficiency, high-reliability automotive power conversion - emphasizing low R_DS(on), robust avalanche capability, and seamless integration into ASIL-B/C system architectures.

FAQ

What is the maximum continuous drain current at 125°C case temperature?

At T_C = 125°C and V_GS = 10 V, the maximum continuous drain current is derated to approximately 35 A based on the I_D vs. T_C curve on page 4 of the datasheet. This value accounts for thermal limits of the PG-TDSON-8-56 package and ensures safe operation within the SOA boundary under steady-state conditions.

Does this MOSFET require a gate resistor for automotive PWM operation?

Yes - a gate resistor of 10–25 Ω is recommended to dampen ringing caused by parasitic inductance in high-di/dt automotive motor drive circuits. The device's 5.2–7.9 nC Q_gd and 27–35 nC Q_g make it sensitive to overshoot without controlled turn-on/turn-off slew rates, especially at 20–50 kHz switching frequencies.

Is the body diode suitable for synchronous rectification in a 48 V automotive DC-DC converter?

Yes - the body diode exhibits 0.85–1.1 V V_SD at 30 A and 30 ns t_rr with 18 nC Q_rr, enabling efficient synchronous rectification in 48 V buck-derived topologies. Its low Q_rr minimizes reverse recovery loss and EMI when commutated at 100–200 kHz with matched high-side FET timing.

How does the 175°C maximum junction temperature impact PCB layout?

The 175°C rating allows operation with higher ambient temperatures but demands strict thermal design: the exposed thermal pad (Pin 8) must be fully soldered to ≥200 mm² of 2-oz copper with ≥4 thermal vias to internal ground planes. Layout must avoid nearby heat sources and ensure ≥10 mm clearance from other high-power components to maintain T_j < 175°C under full load.