Infineon Technologies IAUC60N04S6N031HATMA1

Overview

IAUC60N04S6N031HATMA1 from Infineon Technologies is an AEC-Q101-qualified automotive-grade N-channel enhancement-mode power MOSFET in a PG-TDSON-8-56 package, rated for 40 V V_DS, 60 A continuous drain current at T_C = 85°C, and 3.1 mΩ max R_DS(on) at V_GS = 10 V. It serves as a high-efficiency half-bridge switch in 12 V/24 V automotive powertrain and body electronics.

For engineers reviewing the IAUC60N04S6N031HATMA1 datasheet, IAUC60N04S6N031HATMA1 pinout, IAUC60N04S6N031HATMA1 application, or IAUC60N04S6N031HATMA1 equivalent, key selection criteria include its 175°C junction temperature rating, 100% avalanche-tested ruggedness, MSL1 reflow compatibility, and low gate charge (Q_g = 23–30 nC) for fast switching in high-frequency DC-DC and motor control stages.

Technical Context

This OptiMOS™-6 device implements a trench-gate superjunction structure optimized for low conduction and switching losses in automotive half-bridge configurations. Its 2.4–3.1 mΩ R_DS(on) at 10 V gate drive enables high-current operation with minimal thermal rise, while the 4.4 V gate plateau voltage ensures stable turn-on under noisy vehicle electrical environments.

Dynamic performance is defined by 1479–1922 pF input capacitance (C_iss), 26–39 pF reverse transfer capacitance (C_rss), and 5 ns turn-on delay with 2 ns rise time under standard test conditions (V_DD = 20 V, R_G = 3.5 Ω, I_D = 60 A), supporting PWM frequencies up to 200 kHz in brushless DC motor drivers.

Key Specifications

Pinout & Package

IAUC60N04S6N031HATMA1 uses the PG-TDSON-8-56 surface-mount package (8-pin, exposed drain pad), optimized for high-power density and low-inductance layout in automotive modules. The thermally enhanced leadframe supports solder-reflow assembly per MSL1 (260°C peak).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Compared with IAUZ40N04S5N024HATMA1 and IPB180N04S4-02, IAUC60N04S6N031HATMA1 uniquely balances 60 A DC current, AEC-Q101 compliance, and 3.1 mΩ on-resistance in a thermally optimized automotive package-making it the preferred choice for production-grade EPS, HVAC, and start-stop systems demanding validated reliability.

Availability

IAUC60N04S6N031HATMA1 is available at Aetrix Electronics and suitable for electric power steering (EPS), automotive HVAC blower motors, and engine start-stop system solenoid drivers requiring stable component supply across extended vehicle lifecycles.

Supply support for IAUC60N04S6N031HATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global R&D and wafer fabrication facilities.

This part belongs to the OptiMOS™-6 product line, engineered specifically for high-efficiency, high-reliability automotive power conversion and motor control applications operating at elevated ambient temperatures.

FAQ

What is the maximum allowable gate-source voltage for IAUC60N04S6N031HATMA1?

The absolute maximum gate-source voltage is ±20 V, with recommended operating range of 0–10 V for standard enhancement-mode switching. Exceeding +10 V does not improve R_DS(on) significantly but increases gate oxide stress and leakage; operation below 4.4 V may result in incomplete turn-on due to the gate plateau characteristic.

Does IAUC60N04S6N031HATMA1 include an integrated body diode, and what are its key parameters?

Yes, it features a monolithic fast-recovery body diode with 60 A continuous forward current rating at T_C = 25°C, 0.85–1.1 V forward voltage at 30 A and 25°C, and 28 ns reverse recovery time with 15 nC recovered charge-optimized for synchronous rectification and inductive load commutation.

How is thermal performance characterized for IAUC60N04S6N031HATMA1 on a standard PCB?

On a 2s2p FR4 PCB per JEDEC JESD51-5/7 standards (vertical orientation, still air), R_thJA is 34 K/W. With direct thermal pad soldering to a 25 mm² copper pour, junction-to-case resistance is 2.0 K/W, enabling 75 W power dissipation at T_C = 25°C-critical for sustained high-current operation in sealed ECU housings.

Can IAUC60N04S6N031HATMA1 be used in parallel configurations, and what layout considerations apply?

Yes, its matched die characteristics and low R_DS(on) tolerance support paralleling for higher current. Key layout rules include symmetrical gate trace lengths with individual 3.5 Ω gate resistors, shared source star-point grounding, and identical thermal pad solder coverage to prevent current imbalance and thermal runaway.