Infineon Technologies IAUS300N04S4N007ATMA1

Overview

IAUS300N04S4N007ATMA1 from Infineon Technologies is an AEC-Q101-qualified N-channel enhancement-mode OptiMOS™-T2 power MOSFET in PG-HSOG-8-1 package, rated for 40 V V_DS, 0.50–0.74 mΩ R_DS(on) at V_GS = 10 V and I_D = 100 A, and 300 A continuous drain current at T_C = 25 °C. It supports automotive high-current switching in battery disconnect, 48 V mild-hybrid systems, and motor control inverters.

For engineers reviewing the IAUS300N04S4N007ATMA1 datasheet, IAUS300N04S4N007ATMA1 pinout, IAUS300N04S4N007ATMA1 application, or IAUS300N04S4N007ATMA1 equivalent, key selection criteria include its 0.4 K/W R_thJC, 100% avalanche-tested ruggedness, 175 °C operating temperature, ultra-low on-resistance, and MSL1 reflow compatibility up to 260 °C.

Technical Context

This device uses trench-based silicon MOSFET technology optimized for low conduction loss and fast switching in high-current DC/DC and inverter stages. Its gate threshold voltage (2.0–4.0 V) enables robust drive with standard 5 V or 10 V logic-level controllers, while its Q_g of 263–342 nC and Q_gd of 36–90 nC support efficient hard-switching operation at frequencies up to several hundred kHz.

The integrated body diode exhibits 0.9–1.3 V forward voltage at 100 A and 25 °C, with t_rr = 90 ns and Q_rr = 147 nC, enabling synchronous rectification and freewheeling in bidirectional topologies. Thermal design is anchored by a low junction-to-case resistance (0.4 K/W), requiring direct thermal interface to heatsink via exposed drain tab.

Key Specifications

Pinout & Package

IAUS300N04S4N007ATMA1 is housed in PG-HSOG-8-1: a surface-mount, thermally enhanced 8-pin package with large exposed drain tab (pins 1–4 and 5–8 internally connected to drain) for low-inductance, high-current PCB mounting and direct heatsink coupling.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 40 V automotive MOSFET applications.

Compared with IAUZ40N04S5L027ATMA1 and IPB180N04S4H5ATMA1, IAUS300N04S4N007ATMA1 offers optimal balance of ultra-low R_DS(on), moderate gate charge, and compact PG-HSOG-8-1 packaging-making it preferred for high-density, high-efficiency 48 V automotive inverters where both conduction and switching losses matter.

Availability

IAUS300N04S4N007ATMA1 is available at Aetrix Electronics and suitable for automotive battery disconnect, 48 V mild-hybrid inverters, and electric power steering motor drivers requiring stable component supply across multi-year production cycles.

Supply support for IAUS300N04S4N007ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS™-T2 product line, engineered specifically for high-current, high-efficiency switching in 12 V and 48 V automotive power systems-including battery management, motor control, and DC/DC conversion.

FAQ

What is the maximum allowable gate-source voltage for IAUS300N04S4N007ATMA1?

The absolute maximum gate-source voltage is ±20 V, as specified in the datasheet. Operation beyond this range risks permanent gate oxide damage. For reliable switching, gate drive should be clamped to +10 V to +15 V for turn-on and –5 V to 0 V for turn-off, avoiding prolonged exposure near the ±20 V limits.

Does IAUS300N04S4N007ATMA1 require external gate resistors in automotive applications?

Yes - a series gate resistor (typically 2.2–10 Ω) is required to control dV/dt, suppress oscillation, and limit peak gate current during switching. The 342 nC total gate charge and 368 pF Crss make it sensitive to ringing without proper gate network damping, especially in high-di/dt motor drive environments.

Can IAUS300N04S4N007ATMA1 be used in synchronous rectification mode?

Yes - its body diode has characterized V_SD = 0.9–1.3 V and t_rr = 90 ns, enabling use as a synchronous rectifier in buck or half-bridge topologies. However, external control timing must ensure gate turn-on occurs before body diode conduction begins to avoid reverse recovery loss.

Is IAUS300N04S4N007ATMA1 compliant with RoHS and REACH regulations?

Yes - it is certified as a green product per Infineon's documentation, fully compliant with RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006, with no restricted substances above threshold limits and full material declaration available upon request.