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Infineon Technologies IAUTN08S5N012LATMA1
- Part No.:
- IAUTN08S5N012LATMA1
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-PowerSFN
- Datasheet:
-
IAUTN08S5N012LATMA1.pdf
- Description:
- MOSFET 2N-CH 80V 300A PG-HSOF
- Quantity:
- Payment:
- Shipping:
Inventory:1,956
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Product details
Overview
IAUTN08S5N012LATMA1 from Infineon is an automotive-qualified dual-channel power MOSFET combining a linear-mode LINFET and a low-RDS(on) ONFET in a single PG-HSOF-8-2 package. It delivers 80 V VDS, 1.15 mΩ max RDS(on) (ONFET), 410 A chip-limited continuous drain current, and operates up to 175 °C - designed for electronic fuses, in-rush current limiting, and slow-switching heater control in battery management systems.
For engineers reviewing the IAUTN08S5N012LATMA1 datasheet, IAUTN08S5N012LATMA1 pinout, IAUTN08S5N012LATMA1 application, or IAUTN08S5N012LATMA1 equivalent, key selection criteria include dual-gate separation (Gate ON / Gate LIN), enhanced SOA for linear operation, 100% avalanche testing, MSL1 reflow rating, and AEC-Q101 qualification beyond standard automotive requirements.
Technical Context
This device integrates two functionally distinct N-channel enhancement-mode MOSFETs on one die: the ONFET optimized for high-current switching with ultra-low conduction loss (1.15 mΩ @ 100 A), and the LINFET engineered for stable linear-mode operation with extended safe operating area (SOA) and superior paralleling capability. Both share a common drain-source path but feature independent gate terminals.
The dual-gate architecture enables precise control separation: Gate ON drives the ONFET for fast switching or hard short-circuit protection, while Gate LIN independently biases the LINFET for analog current regulation, voltage clamping, or controlled energy dissipation - critical for electrical catalyst heaters and overvoltage protection circuits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 80 V - supports 48 V automotive battery systems with margin for load dump transients |
| RDS(on), max | 1.15 mΩ - enables <1 W conduction loss at 300 A, reducing thermal stress in high-power distribution |
| ID (chip-limited) | 410 A - defines absolute current ceiling before bond-wire or silicon failure |
| Tj max | 175 °C - allows operation in under-hood environments without derating in most mounting configurations |
| RthJC | 0.40 K/W - enables efficient heat transfer to heatsink via exposed drain tab |
| Avalanche energy EAS | 300 mJ - provides robustness against inductive switching events without external snubbers |
| Qg,total | 231 nC - determines gate driver strength requirement for full-swing switching of both FETs |
Pinout & Package
Package: PG-HSOF-8-2 - thermally enhanced surface-mount package with exposed drain tab for direct heatsinking and 8-pin layout optimized for high-current automotive PCB layouts.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain Tab | Common Drain Electrode | Electrically and thermally connects both FETs' drains; must be soldered to large copper pour for thermal management |
| Pins 3–8 | Source Terminals | Parallel source connections for low-inductance, high-current return path; shared between both FETs |
| Pin 1 | Gate ON | Controls ONFET only; used for high-speed switching or fault isolation |
| Pin 2 | Gate LIN | Controls LINFET only; biased for linear regulation, current limiting, or soft-start functions |
Key Features
| Feature | Design Value |
|---|---|
| Dual independent gate control | Enables simultaneous or decoupled operation of ONFET (switching) and LINFET (linear regulation) without cross-talk |
| Enhanced SOA for LINFET | Supports stable DC and pulsed linear operation up to 100 A at 48 V with no second breakdown risk |
| 100% avalanche tested | Each unit validated for single-pulse avalanche energy ≥300 mJ - ensures field reliability in inductive loads |
| MSL1 rating (260 °C peak reflow) | Permits standard lead-free reflow without moisture-related delamination or package cracking |
| AEC-Q101 qualified + extended test | Includes additional HTGB, HTRB, and ESD tests beyond baseline AEC-Q101 - validated for 15+ year automotive life |
Applications
| Electronic Fuse | Battery Disconnect Switch |
|---|---|
Use Scenario: Replaces mechanical fuse in 48 V mild-hybrid battery distribution with real-time current monitoring and programmable trip thresholds. IC Role / Device Role / Timing Role: Dual-FET acts as smart switch: ONFET handles fast fault interruption (<10 µs), LINFET provides pre-trip current limiting and I²t accumulation. Use Value: Eliminates fuse replacement, enables diagnostics, and reduces system weight by 30% vs. relay + fuse solutions. | Use Scenario: Controls main battery connection during vehicle startup/shutdown and crash detection events in EV powertrain systems. IC Role / Device Role / Timing Role: ONFET performs hard disconnect; LINFET manages controlled ramp-down to avoid bus voltage collapse and arcing. Use Value: Prevents contact welding in >200 A systems and meets ISO 26262 ASIL-B functional safety requirements for fail-safe disconnection. |
| In-Rush Current Limiter | Electrical Catalyst Heater Driver |
Use Scenario: Limits surge current when charging high-capacitance DC-link banks in onboard chargers and DC/DC converters. IC Role / Device Role / Timing Role: LINFET operates in linear mode to clamp dV/dt and limit peak current to <50 A during 100 ms ramp-up. Use Value: Avoids tripping upstream breakers and extends capacitor lifetime by reducing ripple-induced heating. | Use Scenario: Drives ceramic heater elements in exhaust aftertreatment systems requiring precise temperature control from ambient to 1000 °C. IC Role / Device Role / Timing Role: LINFET regulates heater power in analog mode; ONFET provides emergency shutdown if heater resistance drifts out of spec. Use Value: Achieves ±2 °C thermal stability at 800 °C while surviving repeated thermal cycling per SAE J2380. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-gate automotive power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IAUTN08S5N012L | Same die, identical specs, but marked without "ATMA1" suffix - indicates earlier production batch with identical qualification | No functional difference; ATMA1 denotes updated traceability and packaging per Infineon's 2024 logistics revision | Select ATMA1 for new designs requiring latest manufacturing controls and RoHS documentation revision |
| IAUTN08S5N013L | Higher RDS(on) (1.30 mΩ max), same package and pinout, lower cost | Suitable for less thermally constrained applications where 10–15% higher conduction loss is acceptable | Choose for cost-sensitive BOMs where junction temperature remains <150 °C under worst-case load |
Compared with IAUTN08S5N012L and IAUTN08S5N013L, the IAUTN08S5N012LATMA1 offers the lowest RDS(on) and latest process/traceability - making it optimal for space-constrained, high-efficiency 48 V systems where thermal headroom is minimal and long-term supply continuity is critical.
Availability
IAUTN08S5N012LATMA1 is available at Aetrix Electronics and suitable for automotive battery management, electric power steering (EPS), and exhaust aftertreatment systems requiring stable component supply across multi-year vehicle production cycles.
Supply support for IAUTN08S5N012LATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power electronics, automotive microcontrollers, and security ICs, with global R&D and wafer fabrication facilities.
This part belongs to the OptiMOS™ 5 automotive power MOSFET product line, engineered specifically for next-generation 48 V mild-hybrid architectures requiring high efficiency, functional safety compliance, and extreme thermal resilience.
FAQ
What is the purpose of having separate Gate ON and Gate LIN pins?
Separate Gate ON and Gate LIN pins enable independent control of two functionally distinct MOSFETs on one die: Gate ON drives the low-RDS(on) ONFET for fast switching or fault interruption, while Gate LIN drives the linear-optimized LINFET for analog current regulation, in-rush limiting, or voltage clamping - eliminating cross-conduction risks and enabling mixed-mode operation.
Can IAUTN08S5N012LATMA1 replace a discrete dual-MOSFET solution?
Yes - it replaces two discrete automotive MOSFETs (e.g., one for switching, one for linear control) with matched characteristics, reduced PCB area, and guaranteed thermal coupling. Its integrated dual-die structure eliminates mismatch in threshold voltage, RDS(on), and SOA - critical for parallel LINFET operation and current sharing accuracy in high-reliability systems.
Is the drain tab electrically isolated from the package substrate?
No - the drain tab is the common drain electrode for both MOSFETs and is electrically connected to pins 3–8 through internal bonding. It must be mounted to a grounded or referenced heatsink plane; isolation requires insulating thermal interface material and careful layout to avoid unintended shorts in high-voltage domains.
Does the 175 °C rating apply to both FETs simultaneously during linear operation?
Yes - the 175 °C maximum junction temperature is validated for simultaneous ONFET and LINFET operation under worst-case power dissipation conditions. Thermal simulation data in the datasheet confirms this rating holds when using the recommended 2s2p FR4 PCB layout with vertical orientation and still air, per JEDEC JESD51-5/7 standards.
IAUTN08S5N012LATMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™ 5
- Package/Case:
- 8-PowerSFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel, Common Drain, Common Source
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 80V
- Current - Continuous Drain (Id) @ 25°C:
- 300A (Tj)
- Rds On (Max) @ Id, Vgs:
- 1.15mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id:
- 3.3V @ 275µA
- Gate Charge (Qg) (Max) @ Vgs:
- 24nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 15340pF @ 40V
- Power - Max:
- 375W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-HSOF-8-2
IAUTN08S5N012LATMA1 FAQ
1.How can I place an order for IAUTN08S5N012LATMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IAUTN08S5N012LATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IAUTN08S5N012LATMA1 reliable?
The price and inventory of IAUTN08S5N012LATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IAUTN08S5N012LATMA1 is usually 5 days.
3.What payment methods are accepted for IAUTN08S5N012LATMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IAUTN08S5N012LATMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IAUTN08S5N012LATMA1?
IAUTN08S5N012LATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IAUTN08S5N012LATMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IAUTN08S5N012LATMA1?
For technical support, including IAUTN08S5N012LATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IAUTN08S5N012LATMA1 requirements.
6.How does Aetrix verify that IAUTN08S5N012LATMA1 is sourced from the original manufacturer or authorized distributors?
All IAUTN08S5N012LATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IAUTN08S5N012LATMA1 meets industry standards.
7.What is the process for return or replacement of IAUTN08S5N012LATMA1?
All IAUTN08S5N012LATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IAUTN08S5N012LATMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IAUTN08S5N012LATMA1 part is unused and in its original packaging.
Return procedure for IAUTN08S5N012LATMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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