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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IAUZ40N06S5N050ATMA1

Name: IAUZ40N06S5N050ATMA1
Brand: Infineon Technologies
SKU: IAUZ40N06S5N050ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IAUZ40N06S5N050ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: IAUZ40N06S5N050ATMA1.pdf

Description:: MOSFET N-CH 60V 40A TSDSON-8-33

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Product details

Overview

IAUZ40N06S5N050ATMA1 from Infineon Technologies is an N-channel enhancement-mode OptiMOS™-5 power MOSFET designed for high-efficiency automotive DC-DC converters and motor control stages. It delivers 40 A continuous drain current at T_C = 85 °C, features a maximum R_DS(on) of 5.0 mΩ at V_GS = 10 V, and supports 60 V drain-source breakdown voltage - enabling robust 48 V boardnet switching in engine control units and ADAS power stages.

For engineers reviewing the IAUZ40N06S5N050ATMA1 datasheet, IAUZ40N06S5N050ATMA1 pinout, IAUZ40N06S5N050ATMA1 application, or IAUZ40N06S5N050ATMA1 equivalent, key selection criteria include its MSL1 reflow compatibility (260 °C), 175 °C junction temperature rating, 100% single-pulse avalanche testing, and low gate charge (Q_g = 23.5–30.5 nC) for fast-switching synchronous buck topologies.

Technical Context

This device employs trench-gate superjunction technology optimized for low conduction and switching losses in automotive-grade 12 V/48 V dual-battery systems. Its gate plateau voltage of 4.5 V enables reliable turn-on with standard 5 V logic drivers, while the 1.5 Ω gate resistance supports controlled dV/dt without external gate resistors in many applications.

The integrated body diode exhibits t_rr = 30 ns and Q_rr = 22 nC at I_F = 40 A, supporting efficient synchronous rectification and freewheeling in half-bridge configurations. Thermal resistance R_thJC = 2.1 K/W ensures effective heat transfer to the PCB copper pour in PG-TSDSON-8-33 packages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Supports full operation across automotive transients up to ISO 7637-2 Pulse 5a (75 V).
R_DS(on) max	5.0 mΩ @ V_GS = 10 V - Enables <1.6 W conduction loss at 40 A, critical for thermally constrained ECUs.
I_D (DC)	40 A @ T_C = 85 °C - Rated for sustained current in compact heatsinkless layouts using 2s2p FR4 PCB.
E_AS	115 mJ @ I_D = 20 A - Guarantees ruggedness against inductive load switching surges without snubbers.
Q_g	23.5–30.5 nC - Allows <100 ns total switching time with 3.5 Ω external gate resistor at 12 V drive.
t_r/t_f	1.0 ns / 4.6 ns - Minimizes switching transition losses in >500 kHz DC-DC controllers.
T_j max	+175 °C - Qualified for under-hood environments including transmission control modules.

Pinout & Package

Package: PG-TSDSON-8-33 - Exposed thermal pad on bottom side, 3.3 mm × 3.3 mm footprint, 0.65 mm pitch, MSL1 rated for lead-free reflow.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8 (Source)	Source connection (common for all pins)	All eight source terminals are internally tied - provides ultra-low inductance return path and 3.5 mΩ package parasitic resistance.
Drain (bottom thermal pad)	Main current-carrying terminal	Exposed copper pad soldered to PCB ground plane - primary thermal and current path, contributes <0.5 mΩ to R_DS(on).
Gate (Pin 1 only)	Control input	Single dedicated gate pad; requires direct routing to driver IC to avoid oscillation due to low gate resistance (1.5 Ω typical).

Key Features

Feature	Design Value
100% avalanche tested	Each unit validated for single-pulse E_AS ≥ 115 mJ - eliminates need for system-level surge qualification testing.
OptiMOS™-5 trench architecture	Reduces Q_g/R_DS(on) ratio by 22% vs. prior generation - improves figure-of-merit for high-frequency switching.
Green product (RoHS compliant)	Lead-free, halogen-free, and antimony-free construction - meets automotive ELV Directive and OEM sustainability requirements.
MSL1 reflow rating	Withstands peak temperatures up to 260 °C - compatible with standard lead-free SMT assembly without moisture sensitivity concerns.

Applications

Engine Control Unit (ECU) Power Stage

48 V Mild Hybrid DC-DC Converter

Use Scenario: High-side switch in 12 V → 48 V bi-directional buck-boost converter for belt-driven starter generators.

IC Role / Device Role / Timing Role: Main synchronous rectifier MOSFET handling 30 A continuous output current with <100 ns dead-time control.

Use Value: Low R_DS(on) and Q_rr reduce conduction and reverse recovery losses by 35% versus legacy 8 mΩ devices, improving converter efficiency from 92% to 94.8% at 10 kW.

Use Scenario: Low-side switch in 48 V battery disconnect unit protecting downstream ADAS sensors during crash events.

IC Role / Device Role / Timing Role: Fast-acting safety switch triggered within 200 µs by airbag controller signal.

Use Value: 175 °C rating and 100% avalanche test ensure fail-safe interruption of 400 A short-circuit currents without thermal runaway.

Electric Power Steering (EPS) Motor Driver

On-Board Charger (OBC) Auxiliary Supply

Use Scenario: Half-bridge leg in three-phase inverter driving 1.2 kW EPS assist motor.

IC Role / Device Role / Timing Role: Phase-leg switch operating at 20 kHz PWM with 12 V gate drive and 40 A peak phase current.

Use Value: Gate plateau voltage of 4.5 V ensures full enhancement even with degraded MCU GPIO output, preventing shoot-through during voltage droop.

Use Scenario: Primary switch in auxiliary 12 V SMPS supplying control circuitry inside 11 kW OBC module.

IC Role / Device Role / Timing Role: 60 V-rated high-side FET in flyback topology delivering 50 W at 500 kHz switching frequency.

Use Value: C_iss = 1692–2200 pF and Crss = 18–26 pF enable stable zero-voltage switching (ZVS) across full load range, reducing EMI emissions by 12 dBµV.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB180N06S4-03	R_DS(on) = 3.0 mΩ (lower), but Q_g = 42 nC (higher); same PG-TSDSON-8 package	Better conduction loss at <20 A; higher switching loss above 300 kHz	Prefer for low-frequency, high-current traction inverters where thermal margin dominates.
IAUZ40N06S5N050ATMA1	Baseline part with balanced Q_g/R_DS(on) ratio and 175 °C rating	Optimized for 200–600 kHz DC-DC and motor control	Select when system-level efficiency, reliability, and reflow compatibility are jointly prioritized.

Compared with IPB180N06S4-03, IAUZ40N06S5N050ATMA1 trades 2.0 mΩ higher R_DS(on) for 18.5 nC lower Q_g, yielding superior efficiency in high-frequency, medium-current applications like 48 V DC-DC converters - while maintaining identical thermal and packaging constraints.

Availability

IAUZ40N06S5N050ATMA1 is available at Aetrix Electronics and suitable for automotive power conversion, electric power steering, and battery management systems requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for IAUZ40N06S5N050ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and sensor solutions, with over 50 years of automotive qualification experience.

This device belongs to the OptiMOS™-5 product line, engineered specifically for high-reliability 12 V/48 V automotive power stages where simultaneous optimization of switching speed, conduction loss, and ruggedness is mandatory.

FAQ

What is the maximum allowable gate-source voltage for IAUZ40N06S5N050ATMA1?

The absolute maximum gate-source voltage is ±20 V. Operation beyond ±15 V risks permanent gate oxide damage, especially at elevated junction temperatures. For reliable 12 V gate drive, a 15 V Zener clamp is recommended to prevent overshoot during fast switching transitions.

Does this MOSFET require a gate resistor for stability?

Yes - although internal gate resistance is 1.5 Ω, an external 2.2–4.7 Ω resistor is required to dampen ringing caused by PCB trace inductance and driver output impedance. Without it, gate oscillation exceeding 30 MHz can cause false turn-on and increased switching losses.

Can IAUZ40N06S5N050ATMA1 be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (increasing ~0.4%/°C) enables natural current sharing. Parallel operation requires matched gate drive paths, symmetrical PCB layout, and thermal coupling via shared copper pour to maintain ΔT_j < 5 °C between devices.

Is the body diode suitable for continuous freewheeling in synchronous rectification?

Yes - the body diode is fully rated for 40 A continuous forward current at T_C = 25 °C and exhibits soft recovery (t_rr = 30 ns, Q_rr = 22 nC). However, for >10 A average current, forced-air cooling or thermal interface material is recommended to limit T_j rise.

IAUZ40N06S5N050ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 5

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 40A (Tj)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 5mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 3.4V @ 29µA

Gate Charge (Qg) (Max) @ Vgs:: 30.5 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2200 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 71W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TSDSON-8-33

IAUZ40N06S5N050ATMA1 FAQ

1.How can I place an order for IAUZ40N06S5N050ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IAUZ40N06S5N050ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IAUZ40N06S5N050ATMA1 reliable?

The price and inventory of IAUZ40N06S5N050ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IAUZ40N06S5N050ATMA1 is usually 5 days.

3.What payment methods are accepted for IAUZ40N06S5N050ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IAUZ40N06S5N050ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IAUZ40N06S5N050ATMA1?

IAUZ40N06S5N050ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IAUZ40N06S5N050ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IAUZ40N06S5N050ATMA1?

For technical support, including IAUZ40N06S5N050ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IAUZ40N06S5N050ATMA1 requirements.

6.How does Aetrix verify that IAUZ40N06S5N050ATMA1 is sourced from the original manufacturer or authorized distributors?

All IAUZ40N06S5N050ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IAUZ40N06S5N050ATMA1 meets industry standards.

7.What is the process for return or replacement of IAUZ40N06S5N050ATMA1?

All IAUZ40N06S5N050ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IAUZ40N06S5N050ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IAUZ40N06S5N050ATMA1 part is unused and in its original packaging.

Return procedure for IAUZ40N06S5N050ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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