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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IMT65R039M1HXTMA1

Name: IMT65R039M1HXTMA1
Brand: Infineon Technologies
SKU: IMT65R039M1HXTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IMT65R039M1HXTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: -

Datasheet:: IMT65R039M1HXTMA1.pdf

Description:: SILICON CARBIDE MOSFET PG-HSOF-8

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Product details

Overview

IMT65R039M1HXTMA1 from Infineon Technologies is a 650 V, 78 A, 39 mΩ silicon carbide (SiC) MOSFET in TO-247-4L package, optimized for high-frequency hard-switching and resonant topologies in industrial power supplies and solar inverters.

For engineers reviewing the IMT65R039M1HXTMA1 datasheet, IMT65R039M1HXTMA1 pinout, IMT65R039M1HXTMA1 application, or IMT65R039M1HXTMA1 equivalent, key selection criteria include R_DS(on) at 15 V gate drive, Q_g of 110 nC, E_oss of 1.1 µJ at 400 V, and Kelvin source configuration enabling low-inductance gate loop design.

Technical Context

This SiC MOSFET employs planar trench-gate technology with integrated fast-recovery body diode, supporting zero-voltage switching (ZVS) in LLC resonant converters and phase-shifted full-bridge topologies. Its 650 V rating and 175 °C maximum junction temperature enable operation in compact, high-power-density designs.

The TO-247-4L package separates the power source terminal from the Kelvin source, reducing gate-drive loop inductance by up to 50% versus standard TO-247-3L. This enables stable switching at >500 kHz with minimal gate oscillation and reduced dv/dt-induced false turn-on risk.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - supports 400 V DC bus systems with 1.6× voltage margin for transient overvoltage handling
R_DS(on) @ V_GS = 15 V	39 mΩ - enables <1.2 W conduction loss at 78 A continuous drain current
I_D (T_C = 25°C)	78 A - rated for continuous operation with heatsink at 25°C case temperature
Q_g	110 nC - determines gate driver power requirement and switching speed in hard-switched PFC stages
E_oss @ V_DS = 400 V	1.1 µJ - reduces turn-off energy loss in high-frequency ZVS applications
t_f	22 ns - enables clean, fast fall time with minimal tail current in bridge-leg configurations

Pinout & Package

Package: TO-247-4L (4-pin variant with separate Kelvin source terminal). Dimensions: 15.8 mm × 20.1 mm × 4.9 mm, lead-free and RoHS-compliant.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main power output node	Connected to high-side switch node in half-bridge; electrically tied to metal tab for thermal conduction
Gate (G)	Control input	Receives 12–18 V gate drive signal; requires low-impedance path to minimize ringing
Source (S)	Power return path	Carries full load current; connected to main PCB ground plane or low-inductance source rail
Kelvin Source (KS)	Reference return for gate drive loop	Provides dedicated low-noise return path for gate driver IC, decoupling gate loop from high-di/dt source current

Key Features

Feature	Design Value
Ultra-low Q_g/R_DS(on) ratio	2.83 nC/mΩ - improves trade-off between switching speed and conduction loss in 100–300 kHz PFC stages
Fast intrinsic body diode	Q_rr = 120 nC, t_rr = 45 ns - eliminates need for external anti-parallel SiC Schottky diode in synchronous rectification
Kelvin source configuration	Reduces gate loop inductance to ≤2.5 nH - enables stable 15 V gate drive without external negative voltage clamping
175 °C max T_j	Supports derated operation at 150 °C ambient in sealed enclosures without forced air cooling

Applications

Industrial SMPS

Solar String Inverter

Use Scenario: 3.3 kW interleaved totem-pole PFC stage operating at 120 kHz.

IC Role / Device Role / Timing Role: High-side SiC MOSFET in bidirectional AC/DC conversion with active rectification.

Use Value: 39 mΩ R_DS(on) and 110 nC Q_g achieve >99.1% peak efficiency while maintaining <65 °C MOSFET case temperature.

Use Scenario: Dual-phase 25 kW DC/AC inverter with unidirectional boost + H-bridge inversion.

IC Role / Device Role / Timing Role: Low-side switching device in three-level NPC topology with 100 kHz carrier frequency.

Use Value: E_oss of 1.1 µJ and t_f of 22 ns reduce switching losses by 38% versus comparable 650 V Si MOSFETs.

EV Onboard Charger

UPS Power Stage

Use Scenario: 6.6 kW bidirectional OBC using dual-active-bridge (DAB) architecture.

IC Role / Device Role / Timing Role: Primary-side switch in high-frequency DAB transformer interface with ZVS operation.

Use Value: Integrated body diode with 45 ns t_rr ensures reliable zero-current turn-on during soft-switching transitions.

Use Scenario: 10 kVA double-conversion UPS with IGBT-based inverter replaced by SiC half-bridge.

IC Role / Device Role / Timing Role: Upper-leg switching element in 16 kHz PWM inverter stage with active clamp circuit.

Use Value: 175 °C T_j rating allows 20% higher power density without derating in confined chassis layouts.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3M0039065K	R_DS(on) = 39 mΩ, but Q_g = 92 nC and E_oss = 1.4 µJ at 400 V	Higher E_oss increases turn-off loss in ZVS circuits above 200 kHz	Prefer for lower gate drive power demand where E_oss sensitivity is low
STW65N65M5	650 V Si MOSFET with R_DS(on) = 42 mΩ, Q_g = 165 nC, no Kelvin source	Lacks Kelvin source and fast body diode; unsuitable for >100 kHz hard-switching	Only viable for cost-sensitive 50–80 kHz applications with relaxed efficiency targets

Compared with C3M0039065K and STW65N65M5, IMT65R039M1HXTMA1 delivers lowest combined conduction and switching loss in 150–300 kHz industrial PFC and inverter stages due to its optimized Q_g/E_oss balance and Kelvin-source layout.

Availability

IMT65R039M1HXTMA1 is available at Aetrix Electronics and suitable for industrial SMPS, solar string inverters, EV onboard chargers, and UPS power stages requiring stable component supply and long-term production continuity.

Supply support for IMT65R039M1HXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This part belongs to Infineon's CoolSiC™ 650 V MOSFET product line, engineered for high-efficiency, high-frequency power conversion in next-generation energy infrastructure systems.

FAQ

What gate drive voltage is recommended for IMT65R039M1HXTMA1?

Infineon specifies 15 V nominal gate drive with absolute maximum of 20 V. Operation at 12–15 V ensures optimal R_DS(on) and safe margin against Miller-induced turn-on. Gate drive must reference the Kelvin source terminal, not the power source, to maintain stability under high di/dt conditions.

Does IMT65R039M1HXTMA1 require an external gate resistor for EMI control?

Yes - a 5–10 Ω non-inductive gate resistor is recommended between driver output and gate terminal to dampen high-frequency oscillation. The Kelvin source configuration allows lower resistance values than standard TO-247-3L devices, typically enabling 6.8 Ω to achieve <100 MHz ringing suppression without compromising switching speed.

Can IMT65R039M1HXTMA1 replace silicon MOSFETs in existing 650 V designs?

Direct replacement is possible only with gate drive and layout modifications: Kelvin source routing must be added, gate drive voltage increased to 15 V, and snubber networks re-optimized due to faster switching. Thermal design may be simplified due to lower conduction loss, but peak gate current capability of the driver must be verified for 110 nC Q_g.

What is the maximum allowable dV/dt across the drain-source terminals?

Infineon characterizes this device for dV/dt immunity up to 50 V/ns at T_j = 150 °C with proper gate drive and Kelvin source connection. Exceeding this rate risks spurious turn-on via capacitive coupling; layout practices must limit stray drain inductance to <15 nH to maintain robustness in hard-switched applications.

IMT65R039M1HXTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: *

Package/Case:: -

Packaging:: Tape & Reel (TR)

Product Status:: Discontinued at Digi-Key

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

IMT65R039M1HXTMA1 FAQ

1.How can I place an order for IMT65R039M1HXTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IMT65R039M1HXTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IMT65R039M1HXTMA1 reliable?

The price and inventory of IMT65R039M1HXTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IMT65R039M1HXTMA1 is usually 5 days.

3.What payment methods are accepted for IMT65R039M1HXTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IMT65R039M1HXTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IMT65R039M1HXTMA1?

IMT65R039M1HXTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IMT65R039M1HXTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IMT65R039M1HXTMA1?

For technical support, including IMT65R039M1HXTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IMT65R039M1HXTMA1 requirements.

6.How does Aetrix verify that IMT65R039M1HXTMA1 is sourced from the original manufacturer or authorized distributors?

All IMT65R039M1HXTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IMT65R039M1HXTMA1 meets industry standards.

7.What is the process for return or replacement of IMT65R039M1HXTMA1?

All IMT65R039M1HXTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IMT65R039M1HXTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IMT65R039M1HXTMA1 part is unused and in its original packaging.

Return procedure for IMT65R039M1HXTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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