Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPA029N06NM5SXKSA1

Name: IPA029N06NM5SXKSA1
Brand: Infineon Technologies
SKU: IPA029N06NM5SXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IPA029N06NM5SXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: IPA029N06NM5SXKSA1.pdf

Description:: MOSFET N-CH 60V 87A TO220

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:255

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IPA029N06NM5SXKSA1 from Infineon Technologies is an N-channel enhancement-mode MOSFET in PG-TO220FP package, rated for 60 V V_DS, 2.9 mΩ R_DS(on) max at V_GS = 10 V, and 87 A continuous drain current at T_C = 25 °C. It features low gate charge (Q_G = 56 nC), 100% avalanche tested, and optimized for high-frequency synchronous rectification in DC-DC converters.

For engineers reviewing the IPA029N06NM5SXKSA1 datasheet, IPA029N06NM5SXKSA1 pinout, IPA029N06NM5SXKSA1 application, or IPA029N06NM5SXKSA1 equivalent, key selection criteria include R_DS(on) vs. temperature stability, Q_oss/Q_g trade-off for ZVS operation, thermal resistance (R_thJC = 2.9 °C/W), and safe operating area under pulsed load conditions.

Technical Context

This OptiMOSTM 5 device uses trench-gate superjunction technology to achieve ultra-low R_DS(on) × Q_G figure-of-merit (FOM) of ~162 mΩ·nC. Its gate threshold voltage (V_GS(th) = 2.1–3.3 V) supports standard 5 V or 10 V logic-level drive, and its reverse diode exhibits t_rr = 36 ns and Q_rr = 31 nC at 30 A/100 A/µs.

The MOSFET is characterized for operation up to T_j = 175 °C, with normalized R_DS(on) increasing to ~1.8× at 150 °C versus 25 °C. Its SOA curve supports 348 A pulsed drain current for 10 µs at V_DS = 10 V, and it delivers 140 mJ single-pulse avalanche energy at I_D = 87 A.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage before avalanche onset; suitable for 48 V bus and 12 V intermediate bus applications.
R_DS(on), max	2.9 mΩ at V_GS = 10 V, I_D = 87 A - Enables <1.5 W conduction loss at 50 A, critical for high-efficiency power stages.
Q_G	56 nC - Low total gate charge reduces driver power and switching losses in MHz-range converters.
Q_OSS	65 nC - Determines output capacitance energy loss during hard-switching transitions; impacts efficiency at light load.
R_thJC	2.9 °C/W - Junction-to-case thermal resistance enables 38 W power dissipation at 25 °C case temperature.
E_AS	140 mJ - Single-pulse avalanche capability ensures robustness against inductive turn-off transients in motor drives.
t_rr	36 ns - Fast reverse recovery time minimizes shoot-through risk and body-diode conduction loss in sync-FET operation.

Pinout & Package

IPA029N06NM5SXKSA1 is housed in PG-TO220FP (FullPAK) package with isolated drain tab, enabling direct heatsink mounting without insulating pads. The package has three terminals: Drain (Pin 2), Gate (Pin 1), Source (Pin 3).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control electrode	Receives 4.8 V plateau voltage during switching; requires <3 Ω external gate resistor for optimal dV/dt control.
Pin 2 (Drain)	Main current path (high-side connection)	Exposed metal tab electrically connected to drain; must be insulated from heatsink unless referenced to same potential.
Pin 3 (Source)	Reference node for gate drive and current sensing	Serves as return path for load current and gate drive loop; layout must minimize inductance to suppress ringing.

Key Features

Feature	Design Value
OptiMOSTM 5 trench technology	Delivers 2.9 mΩ R_DS(on) at 60 V rating-~30% lower on-resistance than prior-generation 60 V MOSFETs in same package.
100% avalanche tested	Guarantees minimum 140 mJ single-pulse energy handling per unit, eliminating need for derating in inductive load circuits.
Low Q_oss/Q_g ratio	Q_oss = 65 nC / Q_g = 56 nC ≈ 1.16 - Supports efficient zero-voltage switching (ZVS) in resonant topologies like LLC.
Pb-free & halogen-free	Complies with RoHS Directive 2011/65/EU and IEC61249-2-21, enabling use in automotive and industrial end-equipment.

Applications

Server VRMs

Industrial DC-DC Converters

Use Scenario: High-current, multiphase buck converters supplying CPU/GPU core voltage (0.8–1.2 V @ up to 600 A).

IC Role / Device Role / Timing Role: Synchronous rectifier FET in low-side position, switching at 500 kHz–1 MHz with precise dead-time control.

Use Value: 2.9 mΩ R_DS(on) and 36 ns t_rr reduce conduction + body-diode losses by >15% versus legacy 3.5 mΩ parts, improving full-load efficiency to >95%.

Use Scenario: Isolated 48 V–12 V step-down converters in programmable logic controllers and motor drives.

IC Role / Device Role / Timing Role: Primary-side switch in active-clamp forward or asymmetrical half-bridge topology.

Use Value: 140 mJ E_AS withstands reflected inductive spikes during clamp reset, eliminating need for external snubbers.

Telecom Rectifiers

Automotive On-Board Chargers

Use Scenario: 48 V input, 12 V output telecom rectifier modules operating at ambient up to 70 °C.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in center-tapped or LLC resonant converter.

Use Value: R_thJC = 2.9 °C/W allows 38 W dissipation with minimal heatsink volume, supporting compact 1U form factor designs.

Use Scenario: Bidirectional AC/DC and DC/DC stages in 400 V–800 V EV on-board chargers.

IC Role / Device Role / Timing Role: High-side switch in dual-active-bridge (DAB) isolation stage operating at 100–300 kHz.

Use Value: Stable R_DS(on) over −40 °C to 175 °C ensures consistent power delivery across vehicle thermal cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB029N06N3 G	Same R_DS(on) (2.9 mΩ), but in PG-TO263-7 package; Q_G = 52 nC, slightly lower.	Surface-mount variant; better suited for automated assembly and higher-density PCB layouts.	Select when board space is constrained and reflow compatibility is required over through-hole mounting.
STL220N6F7	R_DS(on) = 2.2 mΩ (lower), but Q_G = 72 nC (higher); R_thJC = 3.5 °C/W (worse thermal performance).	Better conduction loss at low frequency, but higher switching loss and reduced thermal headroom at high power.	Select only if operating frequency <200 kHz and thermal margin exceeds 15 °C above 125 °C junction limit.

Compared with IPB029N06N3G and STL220N6F7, IPA029N06NM5SXKSA1 offers optimal balance of low R_DS(on), moderate Q_G, and superior thermal resistance-making it preferred for thermally demanding, medium-to-high-frequency synchronous rectification where reliability and manufacturability are jointly prioritized.

Availability

IPA029N06NM5SXKSA1 is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, and telecom rectifiers requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IPA029N06NM5SXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This part belongs to the OptiMOSTM 5 family-designed specifically for high-efficiency, high-power-density DC-DC conversion in datacenter, industrial, and automotive applications where low R_DS(on) and fast switching dynamics are essential.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The IPA029N06NM5SXKSA1 supports 62 A continuous drain current at T_C = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limitations of the PG-TO220FP package and ensures safe operation within the 175 °C maximum junction temperature limit under sustained load.

Is this MOSFET suitable for zero-voltage switching (ZVS) topologies?

Yes-the combination of low Q_oss (65 nC), moderate Q_g (56 nC), and fast t_rr (36 ns) makes IPA029N06NM5SXKSA1 well-suited for ZVS operation in LLC resonant converters. Its Q_oss/Q_g ratio of ~1.16 supports reliable turn-on under resonant conditions without excessive circulating current.

Does the device include integrated ESD protection on the gate?

No-IPA029N06NM5SXKSA1 does not integrate gate ESD protection diodes. External gate protection (e.g., 12 V Zener clamp between gate and source) is recommended in systems exposed to handling or system-level ESD events, especially when driven by high-impedance sources.

Can the drain tab be electrically connected to the heatsink without insulation?

No-the drain tab is electrically connected to Pin 2 (Drain). If the heatsink is grounded or at a different potential, electrical isolation (e.g., mica washer or silicone pad with dielectric strength ≥2 kV) is mandatory to prevent short-circuit or safety hazard. The PG-TO220FP package is not internally insulated.

IPA029N06NM5SXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 5

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Last Time Buy

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 87A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 2.9mOhm @ 87A, 10V

Vgs(th) (Max) @ Id:: 3.3V @ 36µA

Gate Charge (Qg) (Max) @ Vgs:: 74 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5300 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 38W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220 Full Pack

IPA029N06NM5SXKSA1 FAQ

1.How can I place an order for IPA029N06NM5SXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPA029N06NM5SXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPA029N06NM5SXKSA1 reliable?

The price and inventory of IPA029N06NM5SXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPA029N06NM5SXKSA1 is usually 5 days.

3.What payment methods are accepted for IPA029N06NM5SXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPA029N06NM5SXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPA029N06NM5SXKSA1?

IPA029N06NM5SXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPA029N06NM5SXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPA029N06NM5SXKSA1?

For technical support, including IPA029N06NM5SXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPA029N06NM5SXKSA1 requirements.

6.How does Aetrix verify that IPA029N06NM5SXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPA029N06NM5SXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPA029N06NM5SXKSA1 meets industry standards.

7.What is the process for return or replacement of IPA029N06NM5SXKSA1?

All IPA029N06NM5SXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPA029N06NM5SXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPA029N06NM5SXKSA1 part is unused and in its original packaging.

Return procedure for IPA029N06NM5SXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…

2026-08-11 LDO Regulator: Dropout Voltage, Noise, PSRR and Power Dissipation

LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…