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Infineon Technologies IPA60R180P7XKSA1

Part No.:
IPA60R180P7XKSA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-220-3 Full Pack
Datasheet:
AetrixIPA60R180P7XKSA1.pdf
Description:
MOSFET N-CHANNEL 650V 18A TO220
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:696

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Product details

Overview

IPA60R180P7XKSA1 from Infineon Technologies is a 600 V, 180 mΩ superjunction N-channel power MOSFET in PG-TO220 FP package, featuring integrated body diode and ESD protection. It delivers 53 A pulsed drain current, 25 nC total gate charge, and 2.9 µJ output switching energy at 400 V - optimized for PFC and LLC resonant converters in server PSUs and telecom rectifiers.

For engineers reviewing the IPA60R180P7XKSA1 datasheet, IPA60R180P7XKSA1 pinout, IPA60R180P7XKSA1 application, or IPA60R180P7XKSA1 equivalent, key selection criteria include RDS(on) temperature stability, diF/dt ruggedness (900 A/µs), low ringing tendency in hard-switched topologies, and JEDEC-qualified industrial reliability up to 150 °C junction temperature.

Technical Context

This CoolMOS™ P7 device implements a superjunction cell structure with optimized charge balance, enabling simultaneous reduction of conduction and switching losses. Its gate threshold voltage (3–4 V) and plateau voltage (~5.2 V) support robust drive with standard 12 V gate drivers while maintaining high dv/dt immunity (80 V/ns).

The integrated body diode exhibits 175 ns reverse recovery time and 1.3 µC Qrr under 400 V/2 A conditions, with validated hard commutation capability up to 900 A/µs diF/dt - critical for ZVS operation in LLC half-bridge stages and bidirectional PFC designs.

Key Specifications

ParameterValue and Actual Design Meaning
VDS600 V - supports 400 V DC bus designs with 50 % margin for transient overvoltage in offline SMPS
RDS(on),max180 mΩ at Tj = 150 °C - enables <1.5 W conduction loss at 10 A RMS in continuous conduction mode PFC
Qg,typ25 nC - allows efficient 100–300 kHz switching with <1 W gate drive loss using 5 Ω source/sink impedance
Eoss@400V2.9 µJ - reduces turn-on loss in hard-switched PWM stages and improves light-load efficiency in resonant converters
diF/dt900 A/µs - sustains reliable body diode commutation without snubbers in high-frequency LLC synchronous rectification
Tj,max150 °C - rated for industrial ambient environments with derated thermal design per RthJC = 4.85 °C/W

Pinout & Package

Package: PG-TO220 FP (FullPAK), through-hole, isolated heatsink mounting. Drain connected to tab; pin 2 is Drain, pin 1 is Gate, pin 3 is Source.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1GateHigh-impedance control terminal requiring <10 Ω series resistance to suppress oscillation during fast edge transitions
Pin 2DrainMain high-voltage power terminal; electrically connected to metal tab for direct heatsink coupling and low-inductance layout
Pin 3SourcePower return path and gate reference; must be routed with minimal loop area to reduce common-source inductance

Key Features

FeatureDesign Value
Hard/soft switching compatibilityValidated for both discontinuous-mode PFC and zero-voltage-switching LLC due to 900 A/µs diF/dt and low ringing tendency
ESD robustnessHBM >2 kV - eliminates need for external ESD protection in board-level handling and automated assembly
RDS(on) × Area efficiency<1 Ω·mm² - enables smaller PCB footprint vs. legacy 600 V MOSFETs at same RDS(on), improving power density
Body diode ruggednessJEDEC-qualified hard commutation - supports unidirectional and bidirectional topologies without forced commutation circuits

Applications

Server Power SupplyTelecom Rectifier

Use Scenario: 3 kW front-end PFC stage operating at 100–150 kHz with interleaved boost topology.

IC Role / Device Role / Timing Role: Main switching device in boost power stage; handles 18 A RMS input current with <1.2 W conduction loss at full load.

Use Value: Low Eoss (2.9 µJ) and stable RDS(on) reduce thermal stress on heatsink, enabling fanless operation below 60 °C ambient.

Use Scenario: 48 V/50 A telecom rectifier with active clamp forward converter and synchronous rectification.

IC Role / Device Role / Timing Role: Primary-side switch with ZVS-assisted turn-on; body diode conducts during dead-time with 900 A/µs diF/dt capability.

Use Value: Eliminates need for external anti-parallel diode and reduces gate drive complexity versus SiC alternatives.

LCD TV Backlight InverterUPS Inverter Stage

Use Scenario: Resonant half-bridge inverter driving CCFL or LED backlight at 50–100 kHz.

IC Role / Device Role / Timing Role: High-side switch in LLC resonant tank; operates in soft-switching region with <5 ns timing jitter tolerance.

Use Value: Low Coss (19 pF) and Co(er) (36 pF) minimize capacitive losses and improve frequency stability across line/load variations.

Use Scenario: 1 kVA online UPS inverter bridge with 16 kHz PWM and battery backup transition.

IC Role / Device Role / Timing Role: Low-side switch in H-bridge; body diode recirculates inductive current during dead-time with 175 ns trr.

Use Value: Confirmed 56 mJ single-pulse avalanche energy rating ensures fault tolerance during short-circuit events without desaturation protection.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IPW60R099P7Lower RDS(on) (99 mΩ), higher Qg (44 nC), same packageBetter conduction loss but requires stronger gate driver; less suitable for >250 kHz operationSelect when thermal budget is constrained and switching frequency ≤150 kHz
STP18N60DM6Higher RDS(on) (180 mΩ typ), higher Eoss (4.2 µJ), no integrated ESD diodeReduced commutation ruggedness (diF/dt = 400 A/µs); requires external ESD protectionSelect only for cost-sensitive, non-industrial designs with relaxed reliability requirements

Compared with IPW60R099P7 and STP18N60DM6, IPA60R180P7XKSA1 offers optimal balance of switching efficiency, gate drive simplicity, and industrial-grade ruggedness - making it preferred for high-reliability 100–200 kHz PFC and resonant converters where thermal management and layout compactness are critical.

Availability

IPA60R180P7XKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, LCD TV inverters, and UPS inverter stages requiring stable component supply, JEDEC-qualified industrial reliability, and consistent parametric performance across manufacturing lots.

Supply support for IPA60R180P7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and qualification infrastructure.

The CoolMOS™ P7 product line targets high-efficiency AC-DC conversion systems, delivering improved RDS(on)-to-area ratio and enhanced body diode ruggedness for next-generation server, telecom, and consumer power supplies.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

A 10 Ω gate resistor is validated in the datasheet for 400 V/5.6 A test conditions, yielding 14 ns turn-on delay and 12 ns rise time. For 200 kHz operation, values between 5–15 Ω maintain safe dv/dt (<80 V/ns) while minimizing switching loss; values >22 Ω risk incomplete turn-on at high temperature due to elevated VGS(th) drift.

Can IPA60R180P7XKSA1 be paralleled without external gate ferrites?

No - the datasheet explicitly recommends ferrite beads on each gate or separate totem-pole drivers for paralleling. Without them, gate oscillation and current imbalance occur due to layout asymmetry and mutual inductance between parallel devices, risking thermal runaway above 10 A per device.

Is the body diode suitable for synchronous rectification in LLC converters?

Yes - its 900 A/µs diF/dt rating and 175 ns trr are validated for hard commutation in LLC half-bridge configurations. However, synchronous rectification requires precise dead-time control to avoid shoot-through, as the body diode conduction is not actively controllable.

Does the 2500 Vrms isolation rating apply to continuous operation?

No - the 2500 Vrms insulation withstand voltage is a 1-minute dielectric test rating per IEC 60747-17. Continuous working voltage is limited by VDS = 600 V; sustained operation above 600 V risks avalanche breakdown and irreversible degradation of the superjunction structure.

IPA60R180P7XKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolMOS™ P7
Package/Case:
TO-220-3 Full Pack
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
180mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id:
4V @ 280µA
Gate Charge (Qg) (Max) @ Vgs:
25 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1081 pF @ 400 V
FET Feature:
-
Power Dissipation (Max):
26W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO220 Full Pack

IPA60R180P7XKSA1 FAQ

1.How can I place an order for IPA60R180P7XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPA60R180P7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPA60R180P7XKSA1 reliable?

The price and inventory of IPA60R180P7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPA60R180P7XKSA1 is usually 5 days.

3.What payment methods are accepted for IPA60R180P7XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPA60R180P7XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPA60R180P7XKSA1?

IPA60R180P7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPA60R180P7XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPA60R180P7XKSA1?

For technical support, including IPA60R180P7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPA60R180P7XKSA1 requirements.

6.How does Aetrix verify that IPA60R180P7XKSA1 is sourced from the original manufacturer or authorized distributors?

All IPA60R180P7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPA60R180P7XKSA1 meets industry standards.

7.What is the process for return or replacement of IPA60R180P7XKSA1?

All IPA60R180P7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPA60R180P7XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPA60R180P7XKSA1 part is unused and in its original packaging.

Return procedure for IPA60R180P7XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IPA60R180P7XKSA1 Tags

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