Infineon Technologies IPA60R600P7SXKSA1

Overview

IPA60R600P7SXKSA1 from Infineon Technologies is a 600 V, 0.6 Ω R_DS(on) superjunction MOSFET in PG-TO220 FP package with integrated body diode and ESD protection. It serves as a high-efficiency primary-side switching device in hard- and soft-switching topologies including PFC and LLC resonant converters for server PSUs and telecom rectifiers. Confirmed parameters: V_DS = 650 V (max), Q_g = 9 nC (typ), E_oss = 1.1 µJ @ 400 V, d_iF/dt = 900 A/µs, T_j = 150 °C.

For engineers reviewing the IPA60R600P7SXKSA1 datasheet, IPA60R600P7SXKSA1 pinout, IPA60R600P7SXKSA1 application, or IPA60R600P7SXKSA1 equivalent, key selection criteria include commutation ruggedness (900 A/µs), low ringing tendency in high-dV/dt environments (80 V/ns), ESD robustness (>2 kV HBM), and thermal resistance (R_thJC = 5.98 °C/W) for compact power designs.

Technical Context

This CoolMOS™ P7 device implements a superjunction architecture optimized for high-voltage switching efficiency and system-level ease of use. Its gate plateau voltage is 5.2 V, and it delivers low dynamic losses via Co(er) = 14 pF and fast switching (t_d(off) = 37 ns, t_f = 19 ns) under 400 V bus conditions with 10 Ω gate resistance.

The integrated body diode supports hard commutation with validated di_F/dt capability up to 900 A/µs and reverse recovery charge Q_rr = 0.71 µC at 400 V. The device is qualified per JEDEC standards and features an insulated package with 2500 V_rms isolation rating for enhanced safety in AC-DC front-end stages.

Key Specifications

Pinout & Package

Package: PG-TO220 FP (FullPAK), through-hole, isolated case, drain-connected tab. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Compared with IPW60R099P7 and STP60N6F7, IPA60R600P7SXKSA1 offers optimal balance of switching speed (9 nC Q_g), ruggedness (900 A/µs), and qualification (JEDEC, 2500 V_rms), making it preferred for mission-critical 200–500 kHz telecom and server power stages.

Availability

IPA60R600P7SXKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and UPS inverters requiring stable component supply, long-term lifecycle support, and certified high-reliability MOSFETs.

Supply support for IPA60R600P7SXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global manufacturing and R&D infrastructure.

The CoolMOS™ P7 product line targets high-efficiency, high-power-density AC-DC conversion systems-specifically engineered for PFC, LLC, and resonant topologies in datacenter, telecom, and industrial power supplies.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The maximum continuous drain current (I_D) is 4 A at T_C = 100 °C, as specified in Table 2 of the datasheet. This rating is thermally limited by the 150 °C maximum junction temperature and 5.98 °C/W junction-to-case thermal resistance. Operation above this current requires forced-air cooling or derating based on actual thermal design.

Does IPA60R600P7SXKSA1 require a gate resistor for stability?

Yes-a gate resistor (typically 10 Ω) is recommended to dampen ringing and control switching speed, especially in high-dV/dt applications. The datasheet specifies timing parameters (e.g., t_d(off), t_f) using a 10 Ω resistor, and paralleling configurations explicitly advise ferrite beads or separate totem-pole drivers to prevent oscillation.

Is the body diode suitable for synchronous rectification?

No-the integrated body diode is optimized for hard commutation in PFC and freewheeling roles, not synchronous rectification. Its reverse recovery charge (Q_rr = 0.71 µC) and trr (160 ns) are significantly higher than dedicated SR MOSFETs; using it as a synchronous rectifier would increase loss and EMI in low-voltage secondary-side stages.

Can IPA60R600P7SXKSA1 be used in parallel configurations?

Yes, but with strict layout and drive requirements: gate resistors must be individually placed close to each device, ferrite beads on gate lines are recommended, and separate totem-pole drivers are advised to ensure balanced turn-on/turn-off. The datasheet warns against direct paralleling without these measures due to potential current imbalance from parameter spread.