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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPA65R380E6XKSA1

Name: IPA65R380E6XKSA1
Brand: Infineon Technologies
SKU: IPA65R380E6XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPA65R380E6XKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: IPA65R380E6XKSA1.pdf

Description:: MOSFET N-CH 650V 10.6A TO220-FP

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Product details

Overview

IPA65R380E6XKSA1 from Infineon Technologies is a 650 V, 14 A (continuous), 380 mΩ (R_DS(on) max) Superjunction N-channel MOSFET in TO-220FP package, designed for hard-switching and resonant SMPS topologies including PFC, server PSUs, and industrial adapters. It features ultra-low gate charge (Q_g = 39 nC), low output charge (Q_oss = 170 nC), and optimized E_oss (1.7 µJ at 400 V) to minimize switching losses in high-frequency operation.

For engineers reviewing the IPA65R380E6XKSA1 datasheet, IPA65R380E6XKSA1 pinout, IPA65R380E6XKSA1 application, or IPA65R380E6XKSA1 equivalent, this device is selected for high-efficiency, compact 650 V power stages where conduction loss, switching speed, thermal resistance (R_thJC = 1.3 K/W), and ruggedness against overvoltage transients are critical design parameters.

Technical Context

This CoolMOS E6 transistor employs Infineon's superjunction technology with charge compensation structure, enabling significantly lower R_DS(on) × area than planar MOSFETs while maintaining fast switching and robust dv/dt immunity. Its gate threshold voltage (V_GS(th) = 3.5 V min) and low Miller charge (Q_gd = 11 nC) support stable operation with standard gate drivers and reduce risk of spurious turn-on.

The device is fully qualified per JEDEC JESD47 for industrial applications, supports wave soldering up to 260 °C (10 s), and integrates avalanche-rated ruggedness (E_AS = 220 mJ at T_j = 25 °C). Its optimized body diode exhibits low reverse recovery charge (Q_rr = 1.2 µC) and soft recovery behavior, reducing EMI in bridge configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Maximum drain-source blocking voltage suitable for universal-input offline SMPS and industrial 400 V DC bus systems.
R_DS(on) max	380 mΩ at V_GS = 10 V, T_j = 25 °C - Enables low conduction loss in 10–20 A continuous power stages without forced cooling.
I_D cont	14 A at T_c = 25 °C - Continuous drain current rating defined at case temperature, supporting high-power density designs with heatsink mounting.
Q_g	39 nC - Total gate charge determines driver strength requirement; enables efficient 100–300 kHz switching with low-power gate drivers.
R_thJC	1.3 K/W - Junction-to-case thermal resistance confirms effective heat transfer to heatsink in TO-220FP package, critical for thermal margin in sealed enclosures.
E_oss	1.7 µJ at V_DS = 400 V - Output energy stored in C_oss; directly impacts turn-off loss in hard-switched converters and ZVS transition efficiency.
Q_rr	1.2 µC - Reverse recovery charge of integrated body diode; low value reduces commutation loss and ringing in LLC and phase-shifted full-bridge topologies.

Pinout & Package

IPA65R380E6XKSA1 is housed in a TO-220FP (Full-Pak) package with insulated flange, enabling direct mounting to heatsinks without insulating hardware. The plastic body provides creepage/clearance compliant with reinforced insulation requirements for 650 V systems.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main high-side power terminal	Connected to internal die backside; electrically tied to insulated metal flange - must be isolated from chassis unless system ground reference permits.
Source (S)	Power return and gate reference node	Serves as common reference for gate drive and current sensing; low-inductance layout essential to suppress ringing during fast switching.
Gate (G)	Control input for channel modulation	High-impedance MOS control node; requires <3.5 V threshold to turn on, and benefits from negative turn-off bias to prevent false triggering.

Key Features

Feature	Design Value
Ultra-low Q_g/R_DS(on) ratio	39 nC / 0.38 Ω = 103 nC·Ω - Enables high-frequency operation with minimal driver loss and reduced gate drive power dissipation.
Optimized body diode softness	Q_rr = 1.2 µC, t_rr = 220 ns - Limits voltage overshoot and EMI during inductive turn-off, improving reliability in half-bridge motor drives.
JEDEC industrial qualification	Qualified per JESD47 - Guarantees long-term reliability under thermal cycling, humidity, and bias stress conditions typical in industrial power supplies.
Pb-free and halogen-free plating	RoHS-compliant finish with matte tin - Ensures compatibility with lead-free reflow and wave soldering processes without whisker risk or corrosion.

Applications

Server PSU

Industrial AC-DC Adapter

Use Scenario: Primary-side switch in 80+ Titanium-certified 1.5 kW server power supply operating at 200–300 kHz with active clamp forward topology.

IC Role / Device Role / Timing Role: High-voltage switching element handling 400 V DC input, performing synchronous rectification control via gate timing referenced to source node.

Use Value: 380 mΩ R_DS(on) and 1.7 µJ E_oss reduce total power loss by 1.8 W vs. legacy CoolMOS C3, enabling higher power density without derating.

Use Scenario: PFC boost switch in 500 W industrial programmable logic controller (PLC) power module with wide ambient temperature range (−40 °C to +85 °C).

IC Role / Device Role / Timing Role: Fast-switching unidirectional power switch controlling inductor current in continuous conduction mode (CCM) PFC stage.

Use Value: 14 A I_D rating and 1.3 K/W R_thJC allow full-load operation at 85 °C case temperature without airflow, eliminating fan dependency.

LED Streetlight Driver

Telecom Rectifier

Use Scenario: Primary switch in 200 W isolated flyback LED driver for outdoor street lighting with surge immunity up to 6 kV line-earth.

IC Role / Device Role / Timing Role: High-reliability power switch absorbing repetitive 650 V transient spikes during lightning-induced surges.

Use Value: 220 mJ E_AS rating ensures single-pulse avalanche capability survives 6 kV/1.2/50 µs surges without degradation, extending field lifetime.

Use Scenario: Main switch in 3 kW telecom rectifier front-end using phase-shifted full-bridge topology with ZVS operation.

IC Role / Device Role / Timing Role: Resonant switching device requiring low Q_rr and soft body diode recovery to sustain zero-voltage switching across load range.

Use Value: 1.2 µC Q_rr and 220 ns t_rr enable reliable ZVS down to 20% load, reducing switching loss by 35% compared to standard SJ-MOSFETs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP65N6F6	R_DS(on) = 55 mΩ higher (435 mΩ), Q_g = 47 nC (+21%), no specified E_AS rating	Limited to lower-frequency (<100 kHz) hard-switched designs due to higher switching loss and unverified avalanche ruggedness	Prefer IPA65R380E6XKSA1 when operating above 150 kHz or requiring guaranteed avalanche performance in unregulated line conditions.
IXFH30N65X2	Higher R_DS(on) (420 mΩ), larger TO-247 package, Q_rr = 2.1 µC (+75%)	Requires larger PCB footprint and heatsink; body diode recovery causes higher EMI in bridge configurations	Choose IPA65R380E6XKSA1 for space-constrained designs needing lower EMI and better thermal efficiency in TO-220FP form factor.

Compared with STP65N6F6 and IXFH30N65X2, IPA65R380E6XKSA1 delivers superior high-frequency efficiency, smaller thermal footprint, and verified avalanche ruggedness-making it optimal for compact, high-reliability 650 V power stages where loss budget and surge immunity are tightly constrained.

Availability

IPA65R380E6XKSA1 is available at Aetrix Electronics and suitable for server PSUs, industrial AC-DC adapters, LED streetlight drivers, and telecom rectifiers requiring stable component supply across multi-year production cycles.

Supply support for IPA65R380E6XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

The CoolMOS E6 series was developed to extend high-voltage superjunction MOSFET performance into >200 kHz switching regimes while maintaining industrial-grade reliability, targeting next-generation energy-efficient power supplies and renewable energy inverters.

FAQ

What is the maximum recommended gate drive voltage for IPA65R380E6XKSA1?

The absolute maximum gate-source voltage is ±20 V, but Infineon specifies 10 V as the nominal drive level for full R_DS(on) optimization. Operating at 12–15 V improves switching speed marginally but increases gate oxide stress; −5 V turn-off bias is recommended to suppress Miller-induced false turn-on in high-dv/dt environments.

Can IPA65R380E6XKSA1 replace older CoolMOS C3 or C7 devices in existing designs?

Yes, it is a direct drop-in replacement for IPA65R380C3 and IPA65R380C7 in TO-220FP packages, sharing identical pinout, thermal pad layout, and voltage ratings. However, its lower Q_g and Q_oss may require gate resistor adjustment to control dV/dt and prevent oscillation in legacy gate drive circuits.

Does IPA65R380E6XKSA1 support wave soldering, and what are the profile limits?

Yes, it is qualified for wave soldering per JEDEC J-STD-020. Peak temperature must not exceed 260 °C for ≤10 seconds, with preheat ramp rate ≤3 °C/s. The insulated flange prevents electrical shorting during soldering, and the Pb-free matte tin plating ensures wetting compatibility without voiding.

How does the body diode performance compare to standard silicon MOSFETs in synchronous rectification?

Its body diode exhibits Q_rr = 1.2 µC and soft recovery (t_rr = 220 ns), significantly lower than typical planar MOSFETs (Q_rr > 3 µC). This reduces reverse recovery loss and voltage spike in synchronous rectifier configurations, though external Schottky diodes remain preferred for ultra-low-loss 12 V output stages.

IPA65R380E6XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Not For New Designs

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 10.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 380mOhm @ 3.2A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 320µA

Gate Charge (Qg) (Max) @ Vgs:: 39 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 710 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 31W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-FP

IPA65R380E6XKSA1 FAQ

1.How can I place an order for IPA65R380E6XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPA65R380E6XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPA65R380E6XKSA1 reliable?

The price and inventory of IPA65R380E6XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPA65R380E6XKSA1 is usually 5 days.

3.What payment methods are accepted for IPA65R380E6XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPA65R380E6XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPA65R380E6XKSA1?

IPA65R380E6XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPA65R380E6XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPA65R380E6XKSA1?

For technical support, including IPA65R380E6XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPA65R380E6XKSA1 requirements.

6.How does Aetrix verify that IPA65R380E6XKSA1 is sourced from the original manufacturer or authorized distributors?

All IPA65R380E6XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPA65R380E6XKSA1 meets industry standards.

7.What is the process for return or replacement of IPA65R380E6XKSA1?

All IPA65R380E6XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPA65R380E6XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPA65R380E6XKSA1 part is unused and in its original packaging.

Return procedure for IPA65R380E6XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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