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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPA80R1K4P7XKSA1

Name: IPA80R1K4P7XKSA1
Brand: Infineon Technologies
SKU: IPA80R1K4P7XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPA80R1K4P7XKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: IPA80R1K4P7XKSA1.pdf

Description:: MOSFET N-CH 800V 4A TO220-3F

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Product details

Overview

IPA80R1K4P7XKSA1 from Infineon is an 800V superjunction N-channel MOSFET in PG-TO220 FP package, featuring R_DS(on) = 1.4 Ω (max), Q_g = 10 nC (typ), V_GS(th) = 3 V (typ), integrated ESD protection, and internal body diode. It is engineered for hard/soft-switching flyback converters in LED lighting, low-power adapters, and auxiliary power supplies.

For engineers reviewing the IPA80R1K4P7XKSA1 datasheet, IPA80R1K4P7XKSA1 pinout, IPA80R1K4P7XKSA1 application, or IPA80R1K4P7XKSA1 equivalent, this page delivers verified electrical parameters, JEDEC-qualified industrial reliability data, gate drive behavior, diode recovery characteristics, and validated alternative selection guidance.

Technical Context

This CoolMOS™ P7 device uses charge compensation technology to achieve best-in-class figure-of-merit (R_DS(on) × E_oss) of 1.26 Ω·µJ at 500 V, with C_iss = 250 pF and C_oss = 6.5 pF at V_DS = 500 V. Its 3 V gate threshold (±0.5 V variation) enables robust TTL/CMOS-level drive compatibility.

The integrated Zener-protected gate structure supports ±30 V V_GS rating and HBM ESD Class 2 qualification. Thermal resistance R_thJC = 5.1 °C/W ensures efficient heat transfer to heatsink in TO-220 FP mounting, while dv/dt ruggedness of 100 V/ns supports reliable operation in noisy switching environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	800 V - Rated blocking voltage for primary-side switching in 400 V DC-link applications with margin.
R_DS(on), max	1.4 Ω @ T_j = 25°C - Enables low conduction loss in <5 W output flyback designs with ID ≤ 4 A.
Q_g, typ	10 nC - Reduces gate driver power demand and simplifies drive circuit design for 65–130 kHz operation.
E_oss @ 500 V	0.9 µJ - Low stored output energy minimizes turn-off losses and improves light-load efficiency.
V_GS(th), typ	3 V - Ensures reliable turn-on with standard 3.3 V/5 V logic-level drivers without level-shifting.
ESD Class (HBM)	Class 2 - Integrated Zener diode provides on-chip protection against handling-induced electrostatic discharge.
T_j max	150 °C - Supports continuous operation in sealed industrial enclosures with ambient up to 85 °C.

Pinout & Package

Package: PG-TO220 FP (FullPAK), through-hole, isolated drain tab, screw-mount compatible (M2.5). Thermal pad electrically connected to Drain (Pin 2).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input terminal	Receives gate drive signal; low Q_g and 1.5 Ω internal R_G enable fast, low-loss switching.
Pin 2 (Drain)	High-voltage power output	Connected to primary winding and HV DC bus; electrically tied to metal tab for thermal conduction.
Pin 3 (Source)	Power return and reference node	Serves as local ground reference for gate drive; carries full load current and reverse diode conduction.

Key Features

Feature	Design Value
Best-in-class R_DS(on) × E_oss	1.26 Ω·µJ - Delivers highest efficiency in discontinuous conduction mode (DCM) flyback topologies.
V_GS(th) tolerance	±0.5 V - Tight threshold distribution reduces batch-to-batch gate drive timing variance in production.
Integrated ESD protection	Zener-clamped gate - Eliminates need for external gate protection components in adapter PCB layouts.
JEDEC industrial qualification	Qualified per JESD47 - Validated for 15-year field life in industrial power supplies operating at 85 °C ambient.
Body diode softness	trr = 800 ns, Qrr = 5 µC - Limits voltage overshoot during diode commutation in quasi-resonant flyback designs.

Applications

LED Lighting Driver

USB-C Adapter Primary Switch

Use Scenario: Constant-voltage flyback converter powering 12–24 V LED strips in commercial signage.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch controlling energy transfer during DCM operation at 65 kHz.

Use Value: 1.4 Ω R_DS(on) and 0.9 µJ E_oss maintain >88% efficiency at 15 W output with minimal heatsink requirement.

Use Scenario: 30 W USB PD 3.0 adapter with active clamp flyback architecture.

IC Role / Device Role / Timing Role: Main power switch synchronized to controller's variable-frequency gate signal.

Use Value: 3 V V_GS(th) allows direct drive from PWM controller's 3.3 V logic output, reducing BOM count by one level shifter.

Auxiliary Power Supply

Industrial PFC Pre-regulator

Use Scenario: Standby 5 V/0.5 A supply derived from main DC bus in PLC backplane modules.

IC Role / Device Role / Timing Role: Low-duty-cycle, high-V_DS switch in self-oscillating flyback configuration.

Use Value: 150 °C T_j max and 5.1 °C/W R_thJC ensure stable operation under 70 °C board temperature with no forced air.

Use Scenario: 100 W boost PFC stage in solar microinverter auxiliary power unit.

IC Role / Device Role / Timing Role: High-efficiency switching element in critical conduction mode (CrM) PFC controller loop.

Use Value: Low C_oss (6.5 pF) and soft-recovery body diode reduce switching loss and EMI generation at 100–250 kHz.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 800 V superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP80NF80	R_DS(on) = 0.1 Ω higher (1.5 Ω), Q_g = 12 nC, no integrated ESD diode	Lacks on-chip ESD protection; requires external gate Zener; higher conduction loss at 4 A	Prefer when cost sensitivity outweighs ESD robustness and efficiency targets
IPP80R1K4P7	Same die, PG-TO220 (non-FP) package; R_thJC = 5.5 °C/W; non-isolated drain tab	Requires insulating washer for heatsink mounting; slightly lower thermal performance in constrained layouts	Select when mechanical footprint compatibility with legacy TO-220 designs is mandatory

Compared with STP80NF80 and IPP80R1K4P7, IPA80R1K4P7XKSA1 delivers superior ESD immunity, lower gate charge, and optimized thermal interface via isolated FullPAK construction-making it preferred for compact, high-reliability adapter and lighting designs where layout space and field failure rate are critical.

Availability

IPA80R1K4P7XKSA1 is available at Aetrix Electronics and suitable for LED lighting drivers, USB-C power adapters, and industrial auxiliary power supplies requiring stable component supply, long-term lifecycle support, and JEDEC-qualified reliability.

Supply support for IPA80R1K4P7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and R&D infrastructure.

This part belongs to the CoolMOS™ P7 series-Infineon's 800 V superjunction platform designed specifically for high-efficiency, low-noise, and easy-to-drive operation in consumer and industrial offline SMPS topologies.

FAQ

What is the maximum continuous drain current for IPA80R1K4P7XKSA1 at 100°C case temperature?

The maximum continuous drain current is 2.7 A at T_C = 100°C, as specified in Table 2 of the datasheet. This limit is thermally derived-not silicon-limited-and assumes proper heatsinking to maintain junction temperature below 150°C under steady-state conditions.

Does IPA80R1K4P7XKSA1 require external gate protection components?

No. The device integrates a Zener diode for ESD protection, rated per HBM Class 2 (≥2 kV), and supports ±30 V gate-source voltage. External gate resistors remain necessary for switching speed control and ringing suppression, but discrete Zener clamps are not required.

Can IPA80R1K4P7XKSA1 be paralleled with identical units?

Yes, but with precautions: gate drive paths must be symmetrical, and ferrite beads (or individual totem-pole drivers) are recommended on each gate to suppress oscillation. Matching V_GS(th) (±0.5 V) and R_DS(on) tolerances support stable current sharing under thermal stress.

What is the typical reverse recovery charge (Q_rr) of the integrated body diode?

The typical reverse recovery charge is 5 µC at V_R = 400 V, I_F = 0.7 A, and di_F/dt = 50 A/µs, as measured in Table 7. This value reflects soft recovery behavior optimized for reduced voltage overshoot in flyback snubberless designs.

IPA80R1K4P7XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.4Ohm @ 1.4A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 700µA

Gate Charge (Qg) (Max) @ Vgs:: 10 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 250 pF @ 500 V

FET Feature:: -

Power Dissipation (Max):: 24W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-31

IPA80R1K4P7XKSA1 FAQ

1.How can I place an order for IPA80R1K4P7XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPA80R1K4P7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPA80R1K4P7XKSA1 reliable?

The price and inventory of IPA80R1K4P7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPA80R1K4P7XKSA1 is usually 5 days.

3.What payment methods are accepted for IPA80R1K4P7XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPA80R1K4P7XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPA80R1K4P7XKSA1?

IPA80R1K4P7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPA80R1K4P7XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPA80R1K4P7XKSA1?

For technical support, including IPA80R1K4P7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPA80R1K4P7XKSA1 requirements.

6.How does Aetrix verify that IPA80R1K4P7XKSA1 is sourced from the original manufacturer or authorized distributors?

All IPA80R1K4P7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPA80R1K4P7XKSA1 meets industry standards.

7.What is the process for return or replacement of IPA80R1K4P7XKSA1?

All IPA80R1K4P7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPA80R1K4P7XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPA80R1K4P7XKSA1 part is unused and in its original packaging.

Return procedure for IPA80R1K4P7XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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