Infineon Technologies IPA80R600P7XKSA1

Overview

IPA80R600P7XKSA1 from Infineon is an 800V superjunction N-channel MOSFET in PG-TO220 FP package, featuring R_DS(on) = 0.60 Ω (max), Q_g = 20 nC (typ), V_GS(th) = 3 V (typ), integrated ESD protection, and internal body diode. It is engineered for high-efficiency hard/soft-switching flyback converters in LED lighting, low-power adapters, and auxiliary power supplies.

For engineers reviewing the IPA80R600P7XKSA1 datasheet, IPA80R600P7XKSA1 pinout, IPA80R600P7XKSA1 application, or IPA80R600P7XKSA1 equivalent, key selection criteria include 800V V_DS rating, 0.60 Ω R_DS(on) at 10 V_GS, 3 V gate threshold with ±0.5 V variation, Eoss = 2.0 µJ at 500 V, and TO-220 FP drain-connected package configuration.

Technical Context

This CoolMOS™ P7 device employs charge-compensation superjunction architecture to achieve best-in-class R_DS(on) × E_oss figure of merit, enabling high-frequency switching with reduced switching losses. Its 3 V V_GS(th) and low C_iss (570 pF) simplify gate drive design and improve parallelability.

The integrated Zener-protected gate and robust dv/dt ruggedness (100 V/ns) support reliable operation in noisy industrial environments. The internal body diode exhibits t_rr = 640 ns and Q_rr = 6 µC under 400 V reverse bias, suitable for discontinuous conduction mode (DCM) flyback topologies.

Key Specifications

Pinout & Package

Package: PG-TO220 FP (FullPAK), through-hole, isolated mounting base, drain-connected tab (Pin 2).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar 800V superjunction MOSFET applications.

Compared with STP80N80ZF5 and IPP60R600P7, IPA80R600P7XKSA1 delivers superior ESD immunity, lower switching loss via reduced Q_g and E_oss, and higher continuous current capability in a thermally efficient through-hole package-making it optimal for industrial-grade flyback and auxiliary supplies demanding long-term reliability.

Availability

IPA80R600P7XKSA1 is available at Aetrix Electronics and suitable for LED lighting drivers, USB-C adapters, and industrial auxiliary power supplies requiring stable component supply and JEDEC-qualified performance.

Supply support for IPA80R600P7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive ICs, and industrial control solutions, with over three decades of silicon innovation.

This device belongs to the CoolMOS™ P7 family-designed specifically for high-efficiency, high-voltage SMPS topologies including flyback, PFC, and resonant converters targeting industrial, consumer, and lighting markets.

FAQ

What is the maximum continuous drain current for IPA80R600P7XKSA1 at 100°C case temperature?

The maximum continuous drain current is 5.5 A at T_C = 100°C, as specified in Table 2 of the datasheet. This rating accounts for thermal limitations of the PG-TO220 FP package and ensures safe operation within its 4.5 °C/W R_thJC thermal resistance under sustained load conditions.

Does IPA80R600P7XKSA1 require external gate protection?

No external gate protection is required due to the integrated Zener diode providing HBM Class 2 ESD protection (≥2 kV). The device's gate oxide is hardened against transients, and the built-in clamp eliminates need for discrete TVS or resistor-Zener networks in standard flyback implementations.

Can IPA80R600P7XKSA1 be used in PFC boost stages?

Yes-it is explicitly recommended for PFC stages in consumer and solar applications. With 800 V V_DS, 5.5 A continuous current at 100°C, and 100 V/ns dv/dt ruggedness, it supports 400 V boost outputs while maintaining reliability under line surge and harmonic distortion conditions.

What is the typical reverse recovery charge (Q_rr) of the internal body diode?

The typical reverse recovery charge is 6 µC under test conditions of V_R = 400 V, I_F = 1.7 A, and di_F/dt = 50 A/µs (Table 7). This value directly impacts turn-on loss in synchronous rectification or quasi-resonant topologies where body diode conduction occurs.