Infineon Technologies IPA80R650CEXKSA2

Overview

IPA80R650CEXKSA2 from Infineon Technologies is an 800 V, 650 mΩ R_DS(on) high-voltage superjunction MOSFET in TO-220 FullPAK package, designed for QR flyback converters in LED lighting and AC/DC adapters. It delivers 8 A continuous drain current at T_C = 25°C, features 45 nC total gate charge, and supports 50 V/ns dv/dt ruggedness for robust switching under transient stress.

For engineers reviewing the IPA80R650CEXKSA2 datasheet, IPA80R650CEXKSA2 pinout, IPA80R650CEXKSA2 application, or IPA80R650CEXKSA2 equivalent, key selection criteria include its 800 V blocking voltage, low 3.3 µJ E_oss at 400 V, 400 A/µs body diode di/dt rating, and TO-220 FP package with isolated tab for enhanced thermal and safety performance in compact power supplies.

Technical Context

This CoolMOS™ CE device uses charge compensation technology to achieve superior R_DS(on) × Q_g figure-of-merit versus planar MOSFETs. Its 2.1–3.9 V gate threshold voltage and 5.5 V gate plateau enable stable turn-on control in high-noise adapter environments.

The MOSFET integrates a fast-recovery body diode (t_rr = 550 ns, Q_rr = 7 µC) and exhibits 36 pF energy-related output capacitance (C_o(er))-critical for minimizing switching loss in quasi-resonant topologies operating up to 100 kHz.

Key Specifications

Pinout & Package

IPA80R650CEXKSA2 is housed in a TO-220 FullPAK (PG-TO220-3-1) package with electrically isolated metal tab (Drain), enabling direct mounting to heatsink without insulating washer. The package provides improved thermal performance over standard TO-220 while maintaining footprint compatibility.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage QR flyback switch applications.

Compared with STP80NF55-08 and IPP60R600C7, IPA80R650CEXKSA2 uniquely balances 800 V capability, 45 nC gate charge, and isolated TO-220 FP packaging-making it optimal for space-constrained, high-efficiency QR flyback designs targeting commercial LED drivers and compact USB-C adapters.

Availability

IPA80R650CEXKSA2 is available at Aetrix Electronics and suitable for LED lighting drivers, USB-C power adapters, industrial auxiliary supplies, and smart home AC/DC modules requiring stable component supply across multi-year production cycles.

Supply support for IPA80R650CEXKSA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This part belongs to the CoolMOS™ CE family-engineered specifically for high-efficiency, high-power-density offline SMPS in consumer and industrial power supplies, emphasizing ruggedness, low E_oss, and ease of paralleling.

FAQ

What is the maximum continuous drain current for IPA80R650CEXKSA2 at 100°C case temperature?

The maximum continuous drain current is 5.1 A at T_C = 100°C, as specified in Table 2 of the Rev. 2.1 datasheet. This value is thermally limited by the 150°C maximum junction temperature and the 3.8 °C/W junction-to-case thermal resistance. Derating curves confirm linear reduction from 8.0 A at 25°C to 5.1 A at 100°C.

Does IPA80R650CEXKSA2 require a gate resistor for stable operation in QR flyback circuits?

Yes-a gate resistor (typically 10–22 Ω) is recommended to dampen ringing and control switching speed. The device's 1.2 Ω intrinsic gate resistance is insufficient alone; external RG mitigates overshoot during turn-off and reduces EMI in high-dv/dt environments per Infineon's application note AN2015-05.

Can IPA80R650CEXKSA2 be used in parallel configurations?

Yes, but with design precautions: gate ferrite beads or individual totem-pole drivers are required per gate to prevent dynamic current imbalance. The datasheet explicitly recommends this in Section 1, noting that mismatched layout inductance causes unequal sharing during fast transitions due to differing C_iss and Q_gd.

What is the body diode forward voltage at 8 A and 25°C junction temperature?

The typical body diode forward voltage is 1.0 V at I_F = 8 A and T_j = 25°C, as stated in Table 7 of the datasheet. This value increases to ~1.3 V at 150°C, and the diode supports 400 A/µs commutation di/dt without failure-critical for QR valley-switching reliability.