Infineon Technologies IPA95R1K2P7XKSA1

Overview

IPA95R1K2P7XKSA1 from Infineon is a 950V superjunction MOSFET in the CoolMOS™ P7 family, designed as a high-voltage switching device for primary-side power conversion. It delivers R_DS(on) = 1.2 Ω (max), Q_g = 15 nC (typ), V_GS(th) = 3 V (typ), and features an integrated ESD diode and body diode. It is qualified for industrial applications and commonly used in flyback converters for LED lighting and auxiliary power supplies.

For engineers reviewing the IPA95R1K2P7XKSA1 datasheet, IPA95R1K2P7XKSA1 pinout, IPA95R1K2P7XKSA1 application, or IPA95R1K2P7XKSA1 equivalent, key selection criteria include its 950V V_DS, low E_oss (1.3 µJ @ 500V), tight V_GS(th) tolerance (±0.5V), gate drive simplicity, and JEDEC-qualified industrial reliability.

Technical Context

This device implements a silicon-based superjunction structure optimized for high-voltage, low-conduction-loss operation in discontinuous conduction mode (DCM) and quasi-resonant (QR) flyback topologies. Its 3 V gate threshold enables compatibility with standard 5 V logic-level drivers and simplifies parallel operation.

The integrated Zener-protected gate and body diode support robust ESD handling (HBM Class 2) and reduce external snubber requirements in high-dv/dt environments. Thermal resistance R_thJC = 4.7 °C/W ensures efficient heat transfer to the heatsink in TO-220 FP packages.

Key Specifications

Pinout & Package

IPA95R1K2P7XKSA1 uses the PG-TO220 FP (FullPAK) package with isolated mounting screw hole and drain-connected tab. The case is electrically connected to Pin 2 (Drain).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Compared with IPW95R1K2P7 and STP95NF90, IPA95R1K2P7XKSA1 offers superior thermal performance in compact form factor, tighter gate threshold control for stable light-load operation, and built-in ESD hardening-making it optimal for space-constrained, reliability-critical industrial flyback designs.

Availability

IPA95R1K2P7XKSA1 is available at Aetrix Electronics and suitable for LED lighting drivers, smart meter auxiliary supplies, and low-power AC/DC adapters requiring stable component supply and long-term industrial lifecycle support.

Supply support for IPA95R1K2P7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control solutions, with global manufacturing and quality certification infrastructure.

The CoolMOS™ P7 series targets high-efficiency, high-reliability offline power conversion, specifically engineered for flyback, QR, and PFC topologies demanding best-in-class R_DS(on) × E_oss and ease of drive.

FAQ

What is the maximum continuous drain current for IPA95R1K2P7XKSA1 at 100°C case temperature?

The maximum continuous drain current is 3.7 A at T_C = 100°C, as specified in Table 2 of the datasheet. This value is thermally limited by junction temperature and must be applied with appropriate heatsinking and ambient conditions to maintain T_j ≤ 150°C. Derating curves in Diagram 1 confirm power dissipation drops linearly above 25°C case temperature.

Does IPA95R1K2P7XKSA1 require an external gate resistor for safe operation?

Yes-a gate resistor is required to control dV/dt and prevent oscillation, especially during paralleling. The datasheet recommends ferrite beads or separate totem-pole drivers when paralleling multiple units. Typical gate resistance values range from 10–22 Ω depending on driver strength and layout parasitics, balancing switching speed against ringing and EMI.

Is the internal body diode suitable for synchronous rectification in secondary-side applications?

No-the internal body diode is optimized for clamping and freewheeling in primary-side switching, not for synchronous rectification. Its reverse recovery charge (Q_rr = 3 µC) and time (t_rr = 560 ns) are significantly higher than dedicated SR MOSFETs, making it unsuitable for secondary-side high-frequency rectification where low Q_rr is critical.

Can IPA95R1K2P7XKSA1 be used in avalanche mode for energy absorption?

Yes-it is rated for single-pulse avalanche energy E_AS = 11 mJ and repetitive avalanche energy E_AR = 0.14 mJ under defined test conditions (I_D = 0.7 A, V_DD = 50 V). However, avalanche operation should be avoided in normal design; it is intended only for transient fault protection, not continuous energy handling.