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Infineon Technologies IPAN60R280PFD7SXKSA1

Part No.:
IPAN60R280PFD7SXKSA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-220-3 Full Pack
Datasheet:
AetrixIPAN60R280PFD7SXKSA1.pdf
Description:
CONSUMER PG-TO220-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,779

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Product details

Overview

IPAN60R280PFD7SXKSA1 from Infineon Technologies is a 600 V, 280 mΩ superjunction MOSFET in PG-TO220 FP package with integrated fast body diode and ESD protection. It delivers 15.3 nC gate charge, 2.0 µJ Eoss at 400 V, and 1300 A/µs diF/dt for ZVS operation in high-density AC-DC adapters and LED drivers.

For engineers reviewing the IPAN60R280PFD7SXKSA1 datasheet, IPAN60R280PFD7SXKSA1 pinout, IPAN60R280PFD7SXKSA1 application, or IPAN60R280PFD7SXKSA1 equivalent, key selection criteria include RDS(on) temperature stability, low Eoss for soft-switching efficiency, body diode commutation ruggedness, and TO-220 FP thermal performance in slim power supplies.

Technical Context

This CoolMOS™ PFD7 device implements a superjunction (SJ) structure optimized for cost-sensitive, high-frequency ZVS topologies. Its 650 V VDS rating at Tj,max, 5.31 °C/W RthJC, and 1300 A/µs diF/dt support reliable hard- and soft-switched operation up to 100 kHz in compact chargers and lighting systems.

The integrated fast body diode enables robust synchronous rectification and resonant mode operation without external diode supplementation. Gate plateau voltage of 5.6 V and 11.0 Ω RG ensure stable drive behavior with standard gate drivers and reduce risk of spurious turn-on during high dv/dt transients.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 600 V - Withstands 650 V at max junction temperature; supports 400 V bus designs with margin for transient overvoltage in offline SMPS.
RDS(on) 280 mΩ max at Tj = 150 °C - Enables low conduction loss in 12–30 W adapter primary switches with minimal heatsinking.
Qg 15.3 nC typ - Reduces gate drive power and allows use of low-cost, low-current gate drivers in high-volume consumer power supplies.
Eoss 2.0 µJ at 400 V - Minimizes switching loss in ZVS flyback and LLC converters operating above 65 kHz.
diF/dt 1300 A/µs - Supports fast, controlled body diode commutation in asymmetric half-bridge and resonant topologies without oscillation.
VISO 2500 Vrms - Provides reinforced insulation for primary-to-secondary isolation in Class II consumer power supplies.

Pinout & Package

PG-TO220 FP (FullPAK – Narrow Lead) package with isolated drain tab; thermally enhanced plastic housing rated for 150 °C junction operation and 50 Ncm mounting torque.

Pin/Terminal Circuit Role Design Meaning
Pin 1 (Gate) Control input Receives gate drive signal; 11.0 Ω internal gate resistance stabilizes switching edge and reduces ringing.
Pin 2 (Drain) High-side power terminal Connected to drain of SJ cell array; electrically isolated metal tab provides thermal path to heatsink.
Pin 3 (Source) Power return / reference node Serves as source connection and gate driver return; ties to PCB ground plane for low-inductance layout.

Key Features

Feature Design Value
Ultra-low FOM RDS(on) × Qg Enables >92% efficiency in 25 W USB-C PD adapters at 100 kHz without active cooling.
Fast body diode with 71 ns trr Reduces reverse recovery loss and EMI in quasi-resonant flyback converters by eliminating external snubbers.
Integrated ESD protection (HBM Class 2) Eliminates need for external TVS on gate during board handling and automated assembly in high-throughput lines.
Low RthJC = 5.31 °C/W Supports 24 W continuous dissipation at TC = 25 °C, enabling compact TO-220 footprint in space-constrained adapters.

Applications

USB-C PD Adapter Smart LED Driver

Use Scenario: 30 W single-output USB-C power adapter using QR flyback topology with 90–264 VAC input.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch; operates in discontinuous conduction mode with ZVS at light load.

Use Value: 280 mΩ RDS(on) and 2.0 µJ Eoss enable >91% average efficiency across full load range while meeting CoC Tier 2 requirements.

Use Scenario: Dimmable constant-current LED driver for commercial downlights (24–48 V, 1.5 A output).

IC Role / Device Role / Timing Role: Primary-side switch in asymmetrical half-bridge resonant converter with 100 kHz nominal frequency.

Use Value: 1300 A/µs diF/dt and fast body diode ensure clean zero-current switching transitions, reducing audible noise and EMI filter size.

Universal Input Charger BLDC Motor Drive

Use Scenario: Multi-port 65 W GaN-assisted charger with dual CoolMOS™ PFD7 devices in active-clamp forward configuration.

IC Role / Device Role / Timing Role: Main power switch in high-side position; driven by isolated gate driver with 10.2 Ω external RG.

Use Value: 650 V VDS rating at Tj,max ensures reliability under 450 V surge conditions per IEC 61000-4-5.

Use Scenario: 250 W fan-cooled BLDC motor inverter for cordless power tools (18–24 V battery input, 3-phase output).

IC Role / Device Role / Timing Role: Low-side switch in 3-phase inverter leg; commutates with freewheeling current through integrated body diode.

Use Value: 12 A continuous diode current rating and 107 ns trr prevent shoot-through and thermal runaway during PWM dead-time transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
IPW60R099P7 Lower RDS(on) (99 mΩ), higher Qg (42 nC), same 650 V rating, TO-247 package Better conduction loss but higher gate drive demand; requires larger heatsink due to TO-247 thermal resistance Prefer for <30 W fixed-frequency PSUs where gate drive capability permits; avoid in ultra-slim adapters.
STP60N6F7 600 V, 280 mΩ, 18.5 nC Qg, no integrated ESD diode, D2PAK package Lacks integrated ESD protection; lower thermal performance (RthJC = 6.5 °C/W); requires external gate protection Acceptable for cost-driven industrial SMPS with manual assembly; not recommended for high-volume consumer electronics.

Compared with IPW60R099P7 and STP60N6F7, IPAN60R280PFD7SXKSA1 offers optimal balance of low Eoss, integrated ESD, and TO-220 FP thermal efficiency-making it uniquely suited for ZVS-based, space-constrained consumer power supplies requiring production robustness.

Availability

IPAN60R280PFD7SXKSA1 is available at Aetrix Electronics and suitable for USB-C PD adapters, smart LED drivers, universal input chargers, and BLDC motor drives requiring stable component supply and JEDEC-qualified high-voltage MOSFETs.

Supply support for IPAN60R280PFD7SXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the CoolMOS™ PFD7 family-designed specifically for cost-sensitive, high-efficiency ZVS and QR topologies in consumer power conversion, emphasizing ease-of-use, ruggedness, and slim form factor enablement.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The maximum continuous drain current is 7 A at TC = 100 °C, as specified in Table 2 of the datasheet. This rating is limited by junction temperature (Tj ≤ 150 °C) and accounts for thermal derating in real-world heatsink-limited conditions typical in enclosed adapters.

Does this MOSFET require an external gate resistor for stable operation?

Yes-while the device has an internal 11.0 Ω gate resistance, a 10.2 Ω external gate resistor is used in the reference test circuit (Table 9) to control switching speed, suppress ringing, and ensure reliable ZVS transition timing in QR flyback designs.

Can IPAN60R280PFD7SXKSA1 be paralleled with identical units?

Yes, but Infineon recommends using ferrite beads on each gate line or separate totem-pole drivers to minimize dynamic current imbalance. The device's positive RDS(on) temperature coefficient supports current sharing, but layout symmetry remains critical.

Is the integrated body diode suitable for synchronous rectification in LLC converters?

No-the integrated body diode is optimized for commutation in ZVS topologies, not continuous conduction. For synchronous rectification, a dedicated low-VF Schottky or MOSFET with optimized gate drive is required; this device serves only as a primary-side switch.

IPAN60R280PFD7SXKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™
Package/Case:
TO-220-3 Full Pack
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
280mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id:
4.5V @ 180µA
Gate Charge (Qg) (Max) @ Vgs:
15.3 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
656 pF @ 400 V
FET Feature:
-
Power Dissipation (Max):
24W (Tc)
Operating Temperature:
-40°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO220-FP

IPAN60R280PFD7SXKSA1 FAQ

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The price and inventory of IPAN60R280PFD7SXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPAN60R280PFD7SXKSA1 is usually 5 days.

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5.How can I obtain technical support or documentation for IPAN60R280PFD7SXKSA1?

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6.How does Aetrix verify that IPAN60R280PFD7SXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPAN60R280PFD7SXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPAN60R280PFD7SXKSA1 meets industry standards.

7.What is the process for return or replacement of IPAN60R280PFD7SXKSA1?

All IPAN60R280PFD7SXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPAN60R280PFD7SXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPAN60R280PFD7SXKSA1 part is unused and in its original packaging.

Return procedure for IPAN60R280PFD7SXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IPAN60R280PFD7SXKSA1 Tags

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