Infineon Technologies IPAN60R360PFD7SXKSA1

Overview

IPAN60R360PFD7SXKSA1 from Infineon Technologies is a 600 V, 360 mΩ superjunction MOSFET in PG-TO220 FP package with integrated fast body diode and ESD protection. It delivers 12.7 nC gate charge, 1.6 µJ E_oss at 400 V, and 1300 A/µs di_F/dt capability-optimized for ZVS topologies in high-density chargers and LED drivers.

For engineers reviewing the IPAN60R360PFD7SXKSA1 datasheet, IPAN60R360PFD7SXKSA1 pinout, IPAN60R360PFD7SXKSA1 application, or IPAN60R360PFD7SXKSA1 equivalent, key selection criteria include R_DS(on) temperature stability, low E_oss for soft-switching efficiency, body diode commutation ruggedness, and TO-220 FP thermal performance in slim adapter designs.

Technical Context

This CoolMOS™ PFD7 device implements a superjunction (SJ) structure enabling high-voltage blocking (600 V) with ultra-low R_DS(on) × Q_g (360 mΩ × 12.7 nC) and R_DS(on) × E_oss (360 mΩ × 1.6 µJ). Its integrated fast-recovery body diode (t_rr = 60–90 ns, Q_rr = 0.14–0.28 µC) supports robust ZVS operation without external snubbers.

The MOSFET features a dedicated drain-pin-2 configuration in PG-TO220 FP, optimized for low-inductance source return paths and thermal coupling to heatsinks. Gate threshold voltage (V_GS(th) = 3.5–4.5 V) and plateau voltage (5.6 V) ensure stable drive compatibility with standard 10 V gate drivers in consumer SMPS.

Key Specifications

Pinout & Package

Package: PG-TO220 FP (FullPAK – Narrow Lead), through-hole, isolated drain tab, optimized for mechanical stability and thermal transfer to heatsink via drain pin 2.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Compared with IPW60R041P7 and STP60N6F7, IPAN60R360PFD7SXKSA1 uniquely balances low-cost manufacturability, ZVS-ready body diode, and TO-220 FP thermal-mechanical fit-making it optimal for sub-100 W consumer power supplies where size, cost, and soft-switching reliability are co-constrained.

Availability

IPAN60R360PFD7SXKSA1 is available at Aetrix Electronics and suitable for USB-C PD chargers, smart LED drivers, BLDC motor inverters, and industrial AC-DC adapters requiring stable component supply across production ramp and long-term maintenance cycles.

Supply support for IPAN60R360PFD7SXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and qualification infrastructure.

This part belongs to the CoolMOS™ PFD7 superjunction MOSFET product line, engineered specifically for cost-sensitive, high-efficiency offline SMPS in consumer electronics-emphasizing ZVS compatibility, slim form factor support, and robust body diode performance.

FAQ

What is the maximum recommended gate resistor value for reliable ZVS operation?

A 10.2 Ω gate resistor is specified in the datasheet for test conditions (V_DD = 400 V, I_D = 2.9 A). For ZVS in practical adapters, 10–15 Ω ensures sufficient turn-on speed while damping parasitic oscillation; values above 22 Ω risk incomplete turn-on within dead time, increasing conduction loss and thermal stress.

Can IPAN60R360PFD7SXKSA1 replace older CoolMOS™ PFD6 devices in existing designs?

Yes-pin-to-pin compatible with IPAN60R360PFD6SXKSA1 in PG-TO220 FP package. Key improvements include 15% lower E_oss, 10% faster body diode recovery, and enhanced 150°C T_j rating. No layout or gate drive changes are needed, though efficiency gains of 0.3–0.5% are measurable at full load.

Is the drain tab electrically isolated in the PG-TO220 FP package?

Yes-the drain tab is internally connected to Pin 2 (drain) but electrically isolated from the mounting surface by a reinforced plastic barrier per V_ISO = 2500 V_rms. This allows direct heatsink mounting without insulating pads, reducing thermal resistance by ~0.8 °C/W versus insulated alternatives.

Does this MOSFET require external gate clamping for 20 V drive?

No-its absolute maximum V_GS is ±30 V (dynamic), and typical plateau voltage is 5.6 V. With standard 12 V gate drivers, no external Zener clamping is required. However, a 18 V Zener is recommended if driving from 15 V rails with significant ringing risk in high-dv/dt layouts.