Infineon Technologies IPB014N04NF2SATMA1

Overview

IPB014N04NF2SATMA1 from Infineon is an N-channel enhancement-mode MOSFET in D²PAK (PG-TO263-3) package, rated for 40 V drain-source voltage, 1.45 mΩ typical R_DS(on) at V_GS = 10 V, and 194 A continuous drain current at T_C = 25 °C. It serves as a high-current synchronous rectifier or main switch in DC-DC converters, motor drives, and industrial power supplies.

For engineers reviewing the IPB014N04NF2SATMA1 datasheet, IPB014N04NF2SATMA1 pinout, IPB014N04NF2SATMA1 application, or IPB014N04NF2SATMA1 equivalent, key selection criteria include its 106 nC gate charge (0–10 V), 117 nC output charge, 0.65 °C/W junction-to-case thermal resistance, and 100% avalanche-tested ruggedness under repetitive unclamped inductive switching.

Technical Context

This StrongIRFET™2 device uses trench-gate superjunction technology optimized for low conduction and switching losses in high-frequency hard-switched topologies. Its gate plateau voltage of 4.3 V enables robust drive margin with standard 5 V or 3.3 V logic-level controllers.

The MOSFET integrates a fast, soft-recovery body diode with t_rr = 36 ns (at dI/dt = 500 A/μs) and Q_rr = 168 nC, supporting efficient synchronous rectification in buck, half-bridge, and LLC resonant converters without external Schottky diodes.

Key Specifications

Pinout & Package

Package: PG-TO263-3 (D²PAK), surface-mount, isolated tab (drain-connected), RoHS and halogen-free compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 40 V MOSFET applications.

Compared with STL220N4F7AG and IXTH180N40L2, IPB014N04NF2SATMA1 delivers optimal balance: lowest R_DS(on) among 100+ A 40 V devices with moderate Q_g, enabling both high efficiency and high-frequency operation up to 1 MHz in compact layouts.

Availability

IPB014N04NF2SATMA1 is available at Aetrix Electronics and suitable for motor drives, server VRMs, industrial DC-DC converters, and automotive on-board chargers requiring stable component supply and long-term production continuity.

Supply support for IPB014N04NF2SATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification standards.

This part belongs to the StrongIRFET™2 family-designed specifically for high-efficiency, high-current power conversion in industrial, computing, and automotive applications where low R_DS(on), ruggedness, and thermal performance are critical.

FAQ

What is the maximum allowable case temperature for continuous operation?

The datasheet specifies T_C = 175 °C as the absolute maximum case temperature. For reliable long-term operation, derating is required above 125 °C; at T_C = 150 °C, the continuous drain current drops to approximately 120 A (per Figure 2). Thermal design must maintain case temperature below this limit using adequate copper area and heatsinking.

Is IPB014N04NF2SATMA1 suitable for synchronous rectification in LLC resonant converters?

Yes-it is qualified for synchronous rectification due to its low Q_rr (168 nC), fast t_rr (36 ns), and soft-recovery body diode. Its 40 V rating matches common 12 V and 24 V secondary-side outputs, and the 1.45 mΩ R_DS(on) reduces conduction loss versus Schottky diodes, especially at high currents (>30 A).

Does this MOSFET require a negative gate voltage for safe turn-off in half-bridge configurations?

No-its V_GS(th) range (2.1–3.4 V) and low gate leakage (<100 nA) allow safe turn-off with 0 V gate drive. However, applying –5 V improves noise immunity and ensures complete depletion during high-dv/dt conditions; it is not mandatory but recommended for high-noise industrial environments.

How does the D²PAK package affect PCB layout and thermal performance?

The PG-TO263-3 package features an exposed drain tab that must be soldered to ≥6 cm² of 70 μm thick copper on FR4 for optimal thermal performance (R_thJA = 40 °C/W). Layout must avoid thermal vias under the tab and ensure uniform solder paste deposition to prevent voiding and hotspots. The 3-pin configuration simplifies routing but requires careful gate loop minimization to suppress oscillation.