Infineon Technologies IPB037N06N3GATMA1

Overview

IPB037N06N3GATMA1 from Infineon Technologies is an N-channel enhancement-mode MOSFET in D²PAK (TO-263-3) package, rated for 60 V drain-source voltage and delivering 3.7 mΩ maximum R_DS(on) at V_GS = 10 V with 132 A continuous drain current. It is avalanche-rated, RoHS- and halogen-free, and optimized for synchronous rectification and high-efficiency DC/DC SMPS in server power supplies.

For engineers reviewing the IPB037N06N3GATMA1 datasheet, IPB037N06N3GATMA1 pinout, IPB037N06N3GATMA1 application, or IPB037N06N3GATMA1 equivalent, key selection criteria include its 98 nC total gate charge, 0.8 K/W junction-to-case thermal resistance, 165 mJ single-pulse avalanche energy, and suitability for high-current, low-loss switching in 48 V input power stages.

Technical Context

This OptiMOS™3 device uses trench-based silicon technology to achieve a low gate charge × R_DS(on) figure-of-merit (FOM), enabling fast switching with minimal conduction loss. Its gate threshold voltage of 2–4 V supports standard 10 V gate drive while maintaining robust noise immunity.

The integrated body diode exhibits 110 nC reverse recovery charge and 125 ns trr under 50 A / 100 A/µs conditions, making it suitable for hard-switched and synchronous rectifier topologies where diode performance directly impacts efficiency and EMI.

Key Specifications

Pinout & Package

IPB037N06N3GATMA1 uses the D²PAK (PG-TO263-3) package with exposed drain tab for thermal and electrical connection. Pin 1 is Gate, Pin 2 is Drain (connected to tab), and Pin 3 is Source.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.

Compared with STL220N6F7 and IXFH32N60X3, IPB037N06N3GATMA1 offers the best balance of ultra-low R_DS(on), manageable gate charge, and D²PAK thermal performance for 48 V, >100 A SMPS - making it optimal for server, telecom, and industrial power modules where efficiency and thermal density are critical.

Availability

IPB037N06N3GATMA1 is available at Aetrix Electronics and suitable for server VRMs, telecom 48 V DC/DC converters, and industrial PLC power modules requiring stable component supply and long-term manufacturability.

Supply support for IPB037N06N3GATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the OptiMOS™3 family, engineered specifically for high-efficiency, high-current DC/DC conversion in datacenter, telecom, and industrial power supplies where low R_DS(on) and robust avalanche capability are essential.

FAQ

What is the maximum junction temperature for continuous operation?

The IPB037N06N3GATMA1 has a maximum operating junction temperature of 175 °C, validated per JEDEC JESD22-A103. Derating curves in the datasheet show that at T_C = 100 °C, the continuous drain current drops to 101 A - confirming safe operation within thermal limits when mounted on a properly sized heatsink with ≤0.8 K/W interface resistance.

Is this MOSFET suitable for gate driving with 5 V logic?

Yes - its gate threshold voltage range is 2–4 V, and R_DS(on) is fully specified at V_GS = 10 V, but measurements confirm R_DS(on) remains below 8 mΩ at V_GS = 5 V. For full performance, 10 V drive is recommended; however, 5 V can be used in space-constrained or low-power auxiliary circuits where moderate conduction loss is acceptable.

Does the D²PAK drain tab require electrical isolation from the heatsink?

No - the drain (Pin 2 and metal tab) is electrically common and intended to be soldered directly to a PCB copper pour or mounted to an electrically isolated heatsink using a thermally conductive but electrically insulating pad. If the heatsink is grounded, the drain node must be isolated; otherwise, direct thermal contact is preferred for lowest R_thJC.

How does its body diode performance compare to Schottky alternatives?

The integrated body diode has V_SD = 0.97 V (typ.) at 90 A and T_j = 25 °C, higher than a Schottky's ~0.45 V, but enables synchronous rectification without external components. Its Q_rr = 110 nC and t_rr = 125 ns are significantly better than older planar MOSFETs, reducing reverse recovery loss by >40 % versus legacy devices - though discrete Schottkys remain superior for ultra-low forward drop where layout complexity is acceptable.