Infineon Technologies IPB043N10NF2SATMA1

Overview

IPB043N10NF2SATMA1 from Infineon Technologies is an N-channel enhancement-mode power MOSFET in D²PAK (PG-TO263-3) package, rated for 100 V V_DS, 4.35 mΩ R_DS(on) max at V_GS = 10 V, and 135 A continuous drain current at T_C = 25 °C. It features 100% avalanche tested ruggedness, low Q_g (57 nC), and Q_oss (74 nC), optimized for high-efficiency synchronous rectification and motor drive half-bridge stages.

For engineers reviewing the IPB043N10NF2SATMA1 datasheet, IPB043N10NF2SATMA1 pinout, IPB043N10NF2SATMA1 application, or IPB043N10NF2SATMA1 equivalent, key selection criteria include its low conduction loss at high current, fast switching with 18 ns turn-on delay and 8 ns fall time, robust thermal resistance (R_thJC = 0.9 °C/W), and integrated Schottky-like body diode with 40 ns t_rr.

Technical Context

This MOSFET employs trench-gate silicon technology with optimized charge balancing for reduced R_DS(on) × Q_g figure-of-merit. Its gate threshold voltage (V_GS(th) = 2.2–3.8 V) supports standard 10 V gate drive while maintaining noise immunity, and its 100% UIS-tested avalanche capability ensures reliability under inductive switching stress.

The device integrates a low-V_SD (0.92 V typ. at 80 A, 25 °C) reverse diode with 287 nC Q_rr, enabling efficient synchronous FET operation in DC-DC converters. Thermal design is supported by a low junction-to-case resistance (0.9 °C/W) and validated JEDEC qualification per AEC-Q101 stress test conditions.

Key Specifications

Pinout & Package

IPB043N10NF2SATMA1 uses the PG-TO263-3 (D²PAK) surface-mount package with exposed drain tab for thermal and electrical connection. The package features gull-wing leads and is RoHS-compliant and halogen-free per IEC61249-2-21.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STL220N10F7 and IXFH40N10P, IPB043N10NF2SATMA1 delivers optimal balance of low R_DS(on), moderate Q_g, industry-leading avalanche ruggedness, and surface-mount D²PAK thermal performance-making it the preferred choice for high-reliability, high-density power conversion where layout, efficiency, and robustness are jointly constrained.

Availability

IPB043N10NF2SATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, telecom DC-DC bricks, and EV on-board chargers requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IPB043N10NF2SATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the StrongIRFET™ 2 Power-Transistor product line, engineered for high-efficiency, high-reliability switching in industrial, computing, and renewable energy systems where low R_DS(on) × Q_g and rugged avalanche performance are critical.

FAQ

Is IPB043N10NF2SATMA1 suitable for paralleling multiple devices in high-current applications?

Yes-its positive temperature coefficient of R_DS(on) (confirmed in Diagram 9) ensures inherent current sharing across parallel units. Layout must maintain matched gate loop inductance and symmetric thermal coupling to PCB copper; typical derating is 10% per additional device beyond two units.

What is the maximum recommended gate resistor value for hard-switched 100 kHz operation?

For 100 kHz hard-switched operation with 10 V gate drive, a 1.6 Ω external gate resistor is validated in the datasheet (Table 5). Increasing beyond 3.3 Ω extends turn-off time excessively, raising switching loss; values below 0.8 Ω risk gate oscillation due to low RG and high C_iss.

Does the body diode support continuous conduction mode (CCM) in synchronous rectification?

Yes-the body diode is fully characterized with 123 A continuous forward current (I_S) and 287 nC Q_rr. In CCM buck converters, its 40 ns t_rr and low V_SD allow clean zero-voltage switching transition when paired with appropriate gate timing control.

Can IPB043N10NF2SATMA1 replace older IRFxxN10 series MOSFETs in existing designs?

Yes-pin-compatible with IRF3205 and IRF1404 in D²PAK footprint, but requires gate drive voltage verification: V_GS(th) is lower (2.2–3.8 V vs. 3–4 V), and R_DS(on) is ~30% lower, which may increase peak current in gate drivers not rated for higher Q_g (57 nC vs. ~45 nC).