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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB050N10NF2SATMA1

Name: IPB050N10NF2SATMA1
Brand: Infineon Technologies
SKU: IPB050N10NF2SATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB050N10NF2SATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB050N10NF2SATMA1.pdf

Description:: TRENCH >=100V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPB050N10NF2SATMA1 from Infineon Technologies is a 100 V, 5.05 mΩ N-channel enhancement-mode MOSFET in D²PAK (PG-TO263-3) package, optimized for high-current switching in DC-DC converters and motor drives. It delivers 103 A continuous drain current at T_C=25 °C, features 100% avalanche testing, and supports fast switching with Q_G=51 nC and Q_OSS=67 nC.

For engineers reviewing the IPB050N10NF2SATMA1 datasheet, IPB050N10NF2SATMA1 pinout, IPB050N10NF2SATMA1 application, or IPB050N10NF2SATMA1 equivalent, key selection criteria include R_DS(on) stability over temperature, gate charge profile for synchronous FET operation, reverse diode recovery performance (Q_RR=247 nC), and thermal resistance (R_thJC=1.0 °C/W) in high-power board-level designs.

Technical Context

This StrongIRFET™ 2 device uses trench-gate superjunction technology to achieve low conduction loss while maintaining robust switching behavior. Its gate threshold voltage (V_GS(th)=2.2–3.8 V) enables reliable turn-on with standard 5 V or 10 V gate drivers, and its 100 V V_DS rating targets 48 V input systems such as telecom rectifiers and industrial power supplies.

The integrated body diode exhibits low forward voltage (V_SD=0.91 V typ. at 60 A) and fast reverse recovery (t_rr=37 ns), making it suitable for synchronous rectification and hard-switched topologies where diode conduction and recovery losses dominate efficiency.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Supports 48 V bus systems with ≥2× safety margin against transients
R_DS(on), max	5.05 mΩ @ V_GS=10 V, I_D=60 A - Enables <1 W conduction loss at 100 A in thermally optimized layouts
I_D, cont.	103 A @ T_C=25 °C - Sustains high-current loads without derating when mounted on ≥6 cm² copper
Q_G	51 nC - Determines gate driver peak current requirement (~2 A for 25 ns rise time)
Q_OSS	67 nC - Directly impacts turn-off energy loss and snubber design in hard-switched converters
E_AS	100 mJ - Withstands single-pulse inductive energy without failure in motor drive fault conditions
R_thJC	1.0 °C/W - Enables junction-to-case thermal path modeling for heatsink sizing in high-power modules

Pinout & Package

IPB050N10NF2SATMA1 uses the PG-TO263-3 (D²PAK) surface-mount package with exposed drain tab for enhanced thermal dissipation. The drain connects directly to the large metal tab on the underside of the package, enabling low-inductance, high-current PCB routing.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives gate drive signal; requires low-impedance path to minimize switching oscillation
Pin 2 (Drain) / Tab	High-side power node	Electrically and thermally connected to exposed metal tab; must be soldered to large copper pour
Pin 3 (Source)	Reference node for gate drive	Serves as return path for gate current and source of power stage; critical for stable V_GS control

Key Features

Feature	Design Value
100% avalanche tested	Guarantees ruggedness under inductive switching stress without external snubbers
Pb-free, RoHS-compliant plating	Meets global environmental compliance requirements for industrial and automotive end equipment
Halogen-free per IEC61249-2-21	Reduces toxic gas emission during PCB rework or fire scenarios
Optimized for wide-range applications	Validated across telecom, server PSU, and BLDC motor control use cases per JEDEC qualification

Applications

Server Power Supply

Industrial Motor Drive

Use Scenario: Primary-side synchronous rectifier in 48 V input, 12 V/200 A output LLC resonant converter.

IC Role / Device Role / Timing Role: High-side switch operating at 300–500 kHz with zero-voltage switching (ZVS) boundary.

Use Value: Low R_DS(on) and Q_OSS reduce conduction and capacitive turn-off losses, improving full-load efficiency by ≥0.4% vs. legacy 6.5 mΩ devices.

Use Scenario: Half-bridge leg in 3-phase 400 W BLDC inverter for HVAC fan control.

IC Role / Device Role / Timing Role: Low-side switching element with PWM frequency up to 20 kHz and 100% duty cycle capability.

Use Value: Robust avalanche rating (E_AS=100 mJ) prevents failure during phase current commutation faults.

Telecom Rectifier

EV Onboard Charger

Use Scenario: Output synchronous rectifier in 3 kW 54 V telecom rectifier module.

IC Role / Device Role / Timing Role: Fast-recovery body diode used in discontinuous conduction mode (DCM) freewheeling.

Use Value: Q_RR=247 nC and t_rr=37 ns minimize diode reverse recovery loss and EMI generation.

Use Scenario: High-side switch in bidirectional AC/DC stage of 6.6 kW OBC with SiC gate driver interface.

IC Role / Device Role / Timing Role: Main switching device in totem-pole PFC with 65 kHz switching and 100 V blocking.

Use Value: Gate plateau voltage (V_plateau=4.7 V) ensures clean Miller region transition with 5 V logic-level drivers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N10F7	R_DS(on)=4.2 mΩ (lower), Q_G=62 nC (higher), TO-263 package	Better conduction loss but slower switching due to higher gate charge	Prefer for low-frequency, high-current applications where thermal margin exceeds switching loss budget
IXTP100N10L2	R_DS(on)=5.8 mΩ (higher), Q_G=44 nC (lower), TO-220 package	Lower gate drive demand but higher conduction loss and no exposed drain tab	Prefer for prototyping or lower-power designs where thermal performance is less critical than layout simplicity

Compared with STL220N10F7 and IXTP100N10L2, IPB050N10NF2SATMA1 offers balanced trade-offs: lowest thermal resistance (R_thJC=1.0 °C/W), industry-standard D²PAK footprint, and gate charge optimized for 5–10 V drivers-making it ideal for production-grade 48–60 V power stages requiring reliability and manufacturability.

Availability

IPB050N10NF2SATMA1 is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, and telecom rectifiers requiring stable component supply and long-term lifecycle support.

Supply support for IPB050N10NF2SATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.

This part belongs to the StrongIRFET™ 2 family-designed specifically for high-efficiency, high-reliability power conversion in industrial and infrastructure applications where thermal robustness and avalanche capability are mandatory.

FAQ

What is the maximum junction temperature for continuous operation?

The absolute maximum junction temperature is 175 °C, and the device is rated for continuous operation up to this limit when thermal design maintains T_j ≤ 175 °C under worst-case ambient and power dissipation conditions. Derating curves in the datasheet define allowable I_D versus T_C to ensure safe operation.

Does IPB050N10NF2SATMA1 support gate drive with 5 V logic?

Yes-the gate threshold voltage range is 2.2–3.8 V, and R_DS(on) is fully specified at V_GS=6 V (5.4 mΩ max). A 5 V gate driver can reliably turn on the device, though R_DS(on) will be ~15% higher than at 10 V, requiring thermal verification at full load.

Is the drain tab electrically isolated from other pins?

No-the drain tab is internally connected to Pin 2 (Drain) and forms the primary drain terminal. It must be electrically connected to the drain net on the PCB and thermally attached to a heatsink or copper pour. No isolation layer exists between the tab and Pin 2.

How does the body diode performance compare to discrete Schottky alternatives?

The integrated body diode has V_SD=0.91 V at 60 A and t_rr=37 ns-superior to standard planar MOSFET diodes but higher forward drop than 0.5 V Schottky diodes. It eliminates external diode count and layout complexity in synchronous rectifiers where moderate V_F is acceptable for system-level efficiency gains.

IPB050N10NF2SATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: StrongIRFET™ 2

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 103A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 5.05mOhm @ 60A, 10V

Vgs(th) (Max) @ Id:: 3.8V @ 85µA

Gate Charge (Qg) (Max) @ Vgs:: 76 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3600 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 150W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IPB050N10NF2SATMA1 FAQ

1.How can I place an order for IPB050N10NF2SATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB050N10NF2SATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB050N10NF2SATMA1 reliable?

The price and inventory of IPB050N10NF2SATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB050N10NF2SATMA1 is usually 5 days.

3.What payment methods are accepted for IPB050N10NF2SATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB050N10NF2SATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB050N10NF2SATMA1?

IPB050N10NF2SATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB050N10NF2SATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB050N10NF2SATMA1?

For technical support, including IPB050N10NF2SATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB050N10NF2SATMA1 requirements.

6.How does Aetrix verify that IPB050N10NF2SATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB050N10NF2SATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB050N10NF2SATMA1 meets industry standards.

7.What is the process for return or replacement of IPB050N10NF2SATMA1?

All IPB050N10NF2SATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB050N10NF2SATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB050N10NF2SATMA1 part is unused and in its original packaging.

Return procedure for IPB050N10NF2SATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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