Infineon Technologies IPB057N06NATMA1

Overview

IPB057N06NATMA1 from Infineon Technologies is an N-channel enhancement-mode power MOSFET in PG-TO263-3 package, optimized for synchronous rectification in high-efficiency DC-DC converters. It features 60 V V_DS, 5.7 mΩ R_DS(on) max at V_GS = 10 V, 45 A continuous drain current at T_C = 25 °C, and 100% avalanche tested for ruggedness in hard-switching applications such as server VRMs and telecom POL converters.

For engineers reviewing the IPB057N06NATMA1 datasheet, IPB057N06NATMA1 pinout, IPB057N06NATMA1 application, or IPB057N06NATMA1 equivalent, key selection criteria include R_DS(on) at 6 V gate drive, Q_g (27 nC), Q_oss (32 nC), thermal resistance R_thJC (1.8 K/W), and avalanche energy rating (60 mJ) - all critical for low-loss, high-density power stage design.

Technical Context

This MOSFET employs Infineon's OptiMOSTM process to minimize conduction and switching losses simultaneously. Its gate threshold voltage (2.1–3.3 V) enables reliable turn-on with standard 5 V or 12 V controllers, while its low Q_gd/Q_gs ratio (≈0.56) supports fast, controllable switching transitions under high di/dt conditions.

The device integrates a robust body diode with t_rr of 32–51 ns and Q_rr of 28 nC, enabling efficient reverse recovery in synchronous buck topologies. Thermal performance is enhanced by direct copper-bottom packaging (R_thJC = 1.8 K/W), allowing high-power operation on minimal PCB copper area (6 cm²).

Key Specifications

Pinout & Package

IPB057N06NATMA1 uses the PG-TO263-3 (D²PAK) surface-mount package with exposed drain pad for low-inductance, high-current routing and superior thermal transfer to PCB copper.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STL220N6F7 and IXTP50N065, IPB057N06NATMA1 delivers optimal balance of low R_DS(on), moderate Q_g, guaranteed avalanche ruggedness, and surface-mount thermal performance - making it preferred for high-reliability, high-density synchronous rectification.

Availability

IPB057N06NATMA1 is available at Aetrix Electronics and suitable for server VRMs, telecom POL converters, and industrial motor drives requiring stable component supply, JEDEC-qualified reliability, and RoHS-compliant sourcing.

Supply support for IPB057N06NATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive microcontrollers, and industrial sensors, with global manufacturing and R&D infrastructure.

This device belongs to Infineon's OptiMOSTM 6 family, engineered specifically for high-efficiency, high-frequency power conversion in datacenter, telecom, and industrial applications where thermal density and switching loss are critical.

FAQ

What is the maximum junction temperature for continuous operation?

The IPB057N06NATMA1 has a rated maximum junction temperature of 175 °C, validated per JEDEC JESD22-A108. Operation up to this limit is permitted when thermal design maintains T_j ≤ 175 °C under worst-case ambient and power dissipation conditions, with derating applied above 125 °C per the datasheet's R_DS(on) vs. T_j curve.

Is this MOSFET suitable for 5 V gate drive applications?

Yes - its gate threshold voltage range (2.1–3.3 V) and specified R_DS(on) of 6.4–8.6 mΩ at V_GS = 6 V and I_D = 12 A confirm robust enhancement with 5 V logic-level drivers. However, full 45 A rating requires ≥10 V gate drive to achieve 4.9–5.7 mΩ R_DS(on).

Does the device include an integrated body diode, and what are its recovery characteristics?

Yes - it features a monolithic body diode with typical reverse recovery time of 32–51 ns and Q_rr of 28 nC at I_F = 45 A, dI/dt = 100 A/µs, and T_j = 25 °C. These values enable predictable snubberless operation in synchronous buck converters with careful dead-time tuning.

How does the PG-TO263-3 package improve thermal performance versus standard TO-263?

The PG-TO263-3 is Infineon's standardized variant of TO-263-3 with tighter dimensional tolerances and optimized copper clip construction. Its R_thJC of 1.8 K/W - measured per JEDEC JESD51-14 - reflects improved die-to-case thermal coupling, enabling ~15% higher power dissipation than generic TO-263 equivalents under identical PCB layout conditions.