Infineon Technologies IPB65R660CFDAATMA1

Overview

IPB65R660CFDAATMA1 from Infineon Technologies is a 650 V, 0.66 Ω R_DS(on) superjunction N-channel power MOSFET in PG-TO263-3 (D²PAK) package, featuring ultra-fast body diode (t_rr = 65 ns, Q_rr = 0.2 µC), high commutation ruggedness (di/dt = 900 A/µs), and low gate charge (Q_g = 20 nC). It is qualified to AEC-Q101 and designed for resonant switching in high-efficiency AC-DC adapters and server SMPS.

For engineers reviewing the IPB65R660CFDAATMA1 datasheet, IPB65R660CFDAATMA1 pinout, IPB65R660CFDAATMA1 application, or IPB65R660CFDAATMA1 equivalent, key selection criteria include body diode robustness in ZVS/ZCS topologies, E_oss (1.8 µJ @ 400 V), thermal resistance (R_thJC = 2 K/W), and gate drive simplicity (V_GS(th) = 3.5–4.5 V).

Technical Context

This CoolMOS™ CFDA device implements a superjunction cell structure optimized for high-voltage switching with minimized conduction and switching losses. Its low FOM (R_DS(on) × Q_g) enables high-frequency operation while maintaining low conduction loss at 6 A continuous drain current (T_C = 100 °C).

The integrated ultra-fast body diode supports hard-commutated and resonant topologies without external anti-parallel diodes. Its 900 A/µs di/dt rating and 115 mJ single-pulse avalanche energy ensure reliable operation under dynamic overcurrent and inductive turn-off stress.

Key Specifications

Pinout & Package

IPB65R660CFDAATMA1 is housed in PG-TO263-3 (D²PAK) package with exposed drain pad for thermal enhancement. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Compared with IPP65R660CFDA and IPW65R660CFDA, IPB65R660CFDAATMA1 offers optimal balance of surface-mount manufacturability, thermal performance (R_thJC = 2 K/W), and PCB area efficiency-making it ideal for high-volume, space-constrained server and telecom power supplies.

Availability

IPB65R660CFDAATMA1 is available at Aetrix Electronics and suitable for server power supplies, industrial AC-DC adapters, telecom rectifier modules, and EV onboard charger PFC stages requiring stable component supply and AEC-Q101 compliance.

Supply support for IPB65R660CFDAATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power electronics, automotive microcontrollers, and security ICs, with global R&D and manufacturing infrastructure.

The CoolMOS™ CFDA series targets high-efficiency, high-reliability switching applications in server, telecom, and industrial power conversion-emphasizing ultra-fast body diode performance and ruggedness in resonant topologies.

FAQ

What is the maximum continuous drain current for IPB65R660CFDAATMA1 at 100°C case temperature?

The maximum continuous drain current is 3.8 A at T_C = 100 °C, limited by junction temperature (T_j ≤ 150 °C). This rating assumes proper heatsinking with R_thJC = 2 K/W and accounts for R_DS(on) increase to 1.544 Ω at elevated temperature. Derating curves in the datasheet confirm linear reduction from 6 A at 25 °C.

Does IPB65R660CFDAATMA1 require a negative gate voltage for reliable turn-off?

No. The device has a gate threshold voltage of 3.5–4.5 V and is fully controllable with 0–10 V or 0–12 V gate drive. Negative gate bias is not required for safe turn-off; however, a small negative offset (e.g., –2 V) may improve noise immunity in high-dV/dt environments without affecting reliability.

How does the body diode performance compare to standard silicon MOSFETs?

Its body diode achieves t_rr = 65 ns and Q_rr = 0.2 µC-up to 5× faster and with 70% less recovered charge than conventional 650 V SJ-MOSFETs. This results in lower diode conduction loss, reduced EMI, and elimination of external snubbers in resonant converters.

Is IPB65R660CFDAATMA1 suitable for use in non-isolated buck converters?

Yes, but only in low-duty-cycle, high-input-voltage configurations (e.g., 400 V input → 12 V output) where V_DS stress remains below 650 V. Its 650 V rating provides margin for voltage spikes, and low Q_g supports high-frequency operation. However, its R_DS(on) is optimized for medium-power SMPS-not ultra-low-voltage buck stages.