Infineon Technologies IPB80N06S4L07ATMA2

Overview

IPB80N06S4L07ATMA2 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode OptiMOS™-T2 power MOSFET in PG-TO263-3-2 package, rated for 60 V V_DS, 80 A continuous drain current at T_C = 25°C, and 6.4 mΩ maximum R_DS(on) at V_GS = 10 V. It delivers high-current switching in automotive DC-DC converters, motor control inverters, and battery disconnect circuits with 175°C junction operation and 100% single-pulse avalanche ruggedness.

For engineers reviewing the IPB80N06S4L07ATMA2 datasheet, IPB80N06S4L07ATMA2 pinout, IPB80N06S4L07ATMA2 application, or IPB80N06S4L07ATMA2 equivalent, key selection criteria include its 6.4 mΩ R_DS(on) at 10 V drive, 71 mJ single-pulse avalanche energy, 1.9 K/W R_thJC, AEC-Q101 qualification, and TO263 SMD thermal performance on 6 cm² copper.

Technical Context

This device uses trench-gate silicon technology optimized for low conduction loss and fast switching in 12 V/24 V automotive systems. Its gate threshold voltage (1.2–2.2 V) enables robust 3.3 V/5 V logic-level drive compatibility, while the 5.2–6.4 mΩ R_DS(on) range at 10 V ensures minimal I²R loss under full-load conditions.

The integrated body diode exhibits 0.6–1.3 V forward voltage at 80 A and 39 ns reverse recovery time, supporting synchronous rectification and freewheeling in half-bridge topologies. Thermal design is anchored by a 1.9 K/W junction-to-case resistance and MSL1 reflow rating up to 260°C.

Key Specifications

Pinout & Package

IPB80N06S4L07ATMA2 is housed in a surface-mount PG-TO263-3-2 (D²PAK) package with exposed drain pad for thermal dissipation. Pin 1 is Gate, Pin 2 is Drain (tab), Pin 3 is Source.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IPP80N06S4L-07 and IPI80N06S4L-07, IPB80N06S4L07ATMA2 offers superior thermal performance in space-constrained SMD layouts due to its TO263-3-2 exposed-drain construction and optimized PCB copper coupling, while maintaining identical electrical specs and AEC-Q101 compliance.

Availability

IPB80N06S4L07ATMA2 is available at Aetrix Electronics and suitable for automotive engine control units, battery disconnect systems, electric power steering inverters, and 48 V mild hybrid DC-DC converters requiring stable component supply across extended temperature and lifetime requirements.

Supply support for IPB80N06S4L07ATMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D centers.

This part belongs to the OptiMOS™-T2 power transistor product line, engineered specifically for high-efficiency, high-reliability switching in automotive 12 V/24 V/48 V systems and industrial motor drives.

FAQ

What is the maximum gate-source voltage rating for IPB80N06S4L07ATMA2?

The absolute maximum gate-source voltage is ±16 V, as specified in the Infineon datasheet Rev. 1.0. Exceeding this limit risks permanent gate oxide damage. For reliable operation, gate drive should be clamped to ≤12 V with transient suppression, especially in noisy automotive environments where load dump or ISO 7637-2 pulses may induce overshoot.

Does IPB80N06S4L07ATMA2 require a gate resistor, and what value is recommended?

Yes - a gate resistor is required to control dV/dt and prevent oscillation. For 80 A switching at 100 kHz, a 3.5 Ω resistor is validated in the datasheet (page 3, test condition for t_d(on)/t_r). Lower values increase switching speed but risk shoot-through in bridge configurations; higher values reduce EMI but raise switching losses. Layout-dependent parasitic inductance must also be minimized.

How is the 100% avalanche test performed, and what does it guarantee?

Each unit undergoes single-pulse avalanche testing at I_D = 40 A, yielding E_AS = 71 mJ minimum. This verifies that the MOSFET can safely absorb inductive energy without parametric shift or catastrophic failure. It does not imply unlimited repetitive avalanche capability - repeated events degrade reliability and require derating per the Safe Operating Area (SOA) curve on page 4 of the datasheet.

Can IPB80N06S4L07ATMA2 be used in parallel configurations, and what layout considerations apply?

Yes - its positive temperature coefficient of R_DS(on) (see page 5, Fig. 8) enables current sharing. Critical layout practices include matched gate trace lengths, Kelvin-source connections to eliminate common-source inductance, symmetrical thermal coupling to PCB copper, and individual gate resistors to dampen oscillation. Parallel operation beyond two devices requires dynamic current imbalance analysis per Infineon Application Note AN2015-04.