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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB80P03P405ATMA2

Name: IPB80P03P405ATMA2
Brand: Infineon Technologies
SKU: IPB80P03P405ATMA2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB80P03P405ATMA2

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB80P03P405ATMA2.pdf

Description:: MOSFET_(20V 40V) PG-TO263-3

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Inventory:3,626

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Product details

Overview

IPB80P03P405ATMA2 from Infineon Technologies is a P-channel enhancement-mode MOSFET optimized for automotive high-current switching in 12 V systems, featuring -30 V V_DS, 4.1 mΩ R_DS(on) at -10 V V_GS and -80 A continuous drain current at T_C = 25 °C. It is AEC-Q101 qualified, rated for 175 °C operation, and 100% avalanche tested for robustness in load-dump and inductive switching.

For engineers reviewing the IPB80P03P405ATMA2 datasheet, IPB80P03P405ATMA2 pinout, IPB80P03P405ATMA2 application, or IPB80P03P405ATMA2 equivalent, key selection criteria include its low R_DS(on) at -10 V gate drive, MSL1 reflow compatibility, integrated body diode with 100 ns t_rr, and thermal resistance of 1.1 K/W (junction-to-case) for high-power automotive power distribution.

Technical Context

This device operates as a high-side or low-side switch in DC-DC converters, motor drivers, and battery protection circuits where reverse polarity protection and fast turn-off are required. Its gate threshold voltage range (-2.0 to -4.0 V) ensures reliable turn-on with standard automotive logic levels, while the 10300 pF C_iss and 130 nC Q_g support controlled switching in hard-switched topologies.

The MOSFET integrates an optimized body diode with -1.3 V V_SD at -80 A and 80 nC Q_rr, enabling efficient freewheeling in H-bridge and synchronous rectifier configurations without external diodes. Its SOA is characterized up to 1 ms pulse width with defined duty cycle limits, supporting transient surge handling in automotive load-dump events.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-30 V - Maximum blocking voltage for 12 V automotive systems with margin against load-dump transients
R_DS(on)	4.1 mΩ (typ.) at V_GS = -10 V, I_D = -80 A - Enables <1 W conduction loss at full rated current
I_D (cont)	-80 A at T_C = 25 °C - Supports high-current power distribution without forced cooling
E_AS	410 mJ (single-pulse) - Withstands repetitive inductive energy spikes in motor control
t_r/t_f	10 ns / 20 ns - Enables >1 MHz switching in compact DC-DC designs with low switching loss
Q_g	130 nC (max) - Determines gate driver strength requirement for <100 ns turn-on delay
R_thJC	1.1 K/W - Allows direct heatsink mounting with predictable thermal performance

Pinout & Package

IPB80P03P405ATMA2 uses PG-TO263-3-2 (D²PAK) surface-mount package with isolated drain tab for PCB thermal management. The package supports high-current routing and meets MSL1 reflow requirements up to 260 °C peak temperature.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Connected to system ground or low-side reference; carries full load current
Pin 2 (Gate)	Control input	Receives negative gate drive relative to source; requires <130 nC charge for full turn-on
Pin 3 (Drain)	Power output	Exposed copper pad on backside; electrically connected to drain; primary thermal path to PCB

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive under-hood applications including engine control and body electronics
100% unclamped inductive switching (UIS) tested	Guarantees single-pulse avalanche capability up to 410 mJ at T_j = 25 °C
Low gate charge (Q_gs = 55 nC max)	Reduces gate driver power loss and enables use of cost-effective SOT-23 drivers
Optimized body diode (t_rr = 100 ns, Q_rr = 80 nC)	Minimizes reverse recovery losses in half-bridge and synchronous buck topologies
RoHS-compliant, halogen-free	Meets EU ELV and automotive chemical content restrictions for global vehicle programs

Applications

Reverse Polarity Protection

Battery Disconnect Switch

Use Scenario: Prevents damage to downstream ECUs during incorrect battery connection in 12 V vehicle systems.

IC Role / Device Role / Timing Role: High-side P-channel MOSFET configured as ideal diode replacement with fast turn-off (<100 ns).

Use Value: Eliminates 0.7 V silicon diode drop, reducing heat generation by >90 % and enabling smaller heatsinks.

Use Scenario: Isolates auxiliary battery banks during engine start or fault conditions in dual-battery architectures.

IC Role / Device Role / Timing Role: Low-R_DS(on) power switch controlled via microcontroller GPIO with level-shifting circuitry.

Use Value: Supports -80 A continuous current with <0.33 W conduction loss, minimizing voltage sag during cranking.

DC-DC Converter High-Side Switch

H-Bridge Motor Driver

Use Scenario: High-side switch in non-synchronous buck converter for 5 V/3.3 V rail generation in ADAS modules.

IC Role / Device Role / Timing Role: Hard-switched P-channel FET operating at 500 kHz with gate drive referenced to switched node.

Use Value: 4.1 mΩ R_DS(on) and 130 nC Q_g enable >92 % efficiency at 10 A output with minimal gate drive complexity.

Use Scenario: Low-side switch in 12 V brushed DC motor control for HVAC actuators and seat adjusters.

IC Role / Device Role / Timing Role: Fast-turning P-channel device used in complementary pair with N-channel for bidirectional control.

Use Value: Integrated body diode with 100 ns t_rr reduces external snubber requirements and EMI in PWM-driven loads.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP80P03P4L-05	Same die, TO-220-3-1 package; R_DS(on) = 4.7 mΩ (SMD version spec not applicable); R_thJA = 62 K/W	Through-hole mounting; lower thermal performance in still air; no exposed drain pad	Select when manual assembly or legacy board layout requires through-hole footprint
IPB80P03P4L-05	Same die, TO263-3-2 package but lead-free matte tin finish; identical R_DS(on), Q_g, and SOA	No functional difference; differs only in plating specification per J-STD-020 MSL classification	Select when RoHS+REACH compliance with matte tin termination is mandated by OEM sourcing policy

Compared with IPP80P03P4L-05 and IPB80P03P4L-05, IPB80P03P405ATMA2 offers identical electrical performance but is specifically qualified to MSL1 reflow profile and shipped in tape-and-reel for automated SMT lines-making it optimal for high-volume automotive PCB assembly.

Availability

IPB80P03P405ATMA2 is available at Aetrix Electronics and suitable for automotive power distribution, battery management, and motor control applications requiring stable component supply across Tier-1 production ramps and long-lifecycle vehicle programs.

Supply support for IPB80P03P405ATMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

This device belongs to the OptiMOS™-P2 product line, engineered for high-efficiency, high-reliability P-channel switching in 12 V automotive subsystems-including body control, lighting, and power distribution modules.

FAQ

What is the maximum allowable gate-source voltage for IPB80P03P405ATMA2?

The absolute maximum V_GS is ±20 V. Operation beyond ±12 V is not recommended for long-term reliability, and gate drive circuits must include clamping (e.g., Zener diode) to prevent overshoot during fast switching. The typical gate plateau voltage is -5.3 V, confirming stable enhancement-mode behavior within -10 V drive.

Can IPB80P03P405ATMA2 be used in parallel configurations?

Yes-its negative temperature coefficient of R_DS(on) (increasing resistance with junction temperature) enables inherent current sharing. Designers must match gate drive impedance and PCB layout symmetry; derating to ≤70 A per device is advised for thermal stability in multi-device arrays.

Is the body diode suitable for continuous freewheeling in synchronous rectification?

No-the body diode is optimized for unclamped inductive switching (UIS), not continuous conduction mode. For synchronous rectification, external Schottky diodes or complementary N-channel FETs are required. The 80 nC Q_rr and 100 ns t_rr indicate suitability only for short-duration freewheeling in PWM-based motor drives.

Does IPB80P03P405ATMA2 require a gate resistor for automotive ESD protection?

A series gate resistor (typically 10–47 Ω) is required to dampen ringing and limit peak gate current during fast edge transitions, especially with long PCB traces. While the device passes AEC-Q101 ESD testing (HBM ≥2 kV), external RC filtering remains necessary for robust EMC performance in CAN/LIN bus environments.

IPB80P03P405ATMA2 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4.7mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 4V @ 253µA

Gate Charge (Qg) (Max) @ Vgs:: 130 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 10300 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 137W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB80P03P405ATMA2 FAQ

1.How can I place an order for IPB80P03P405ATMA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB80P03P405ATMA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB80P03P405ATMA2 reliable?

The price and inventory of IPB80P03P405ATMA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB80P03P405ATMA2 is usually 5 days.

3.What payment methods are accepted for IPB80P03P405ATMA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB80P03P405ATMA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB80P03P405ATMA2?

IPB80P03P405ATMA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB80P03P405ATMA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB80P03P405ATMA2?

For technical support, including IPB80P03P405ATMA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB80P03P405ATMA2 requirements.

6.How does Aetrix verify that IPB80P03P405ATMA2 is sourced from the original manufacturer or authorized distributors?

All IPB80P03P405ATMA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB80P03P405ATMA2 meets industry standards.

7.What is the process for return or replacement of IPB80P03P405ATMA2?

All IPB80P03P405ATMA2 units undergo pre-shipment inspection (PSI). If there is an issue with IPB80P03P405ATMA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB80P03P405ATMA2 part is unused and in its original packaging.

Return procedure for IPB80P03P405ATMA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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