Infineon Technologies IPC100N04S51R7ATMA1

Overview

IPC100N04S51R7ATMA1 from Infineon Technologies is an AEC-Q101-qualified N-channel enhancement-mode OptiMOS™-5 power MOSFET with 40 V V_DS, 1.7 mΩ max R_DS(on) at V_GS = 10 V, 100 A continuous drain current at T_C = 25 °C, and 175 °C maximum junction temperature-designed for high-efficiency 12 V automotive power stages including BLDC motor drives and DC-DC converters.

For engineers reviewing the IPC100N04S51R7ATMA1 datasheet, IPC100N04S51R7ATMA1 pinout, IPC100N04S51R7ATMA1 application, or IPC100N04S51R7ATMA1 equivalent, key selection criteria include its 1.3 K/W R_thJC, 100% avalanche-tested ruggedness, MSL1 reflow compatibility, and integrated body diode with 51.8 ns t_rr and 59.4 nC Q_rr.

Technical Context

This device implements a trench-gate, superjunction-free silicon process optimized for low R_DS(on) × Q_g figure-of-merit in automotive 12 V systems. Its gate threshold voltage (2.2–3.4 V) ensures robust noise immunity while enabling direct drive from standard 3.3 V/5 V microcontrollers via appropriate gate drivers.

Thermal design leverages the PG-TDSON-8-34 package's low 1.3 K/W junction-to-case resistance and exposed drain pad for direct PCB copper thermal spreading. Dynamic parameters-including 62–83 nC total gate charge, 3620–4810 pF input capacitance, and 14–20 nC gate-to-drain charge-support high-frequency switching up to 200 kHz in synchronous buck topologies.

Key Specifications

Pinout & Package

Package: PG-TDSON-8-34 - thermally enhanced 8-pin exposed-drain DSO-style leadless package with 3.3 mm × 3.3 mm footprint and 0.65 mm pitch; drain connected to bottom-side thermal pad for low-inductance, high-current routing.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Compared with IRL100N04S5TRPBF and STL110N4LF6AG, IPC100N04S51R7ATMA1 delivers optimal balance of AEC-Q101 assurance, 1.7 mΩ R_DS(on), and 62–83 nC Q_g-making it the preferred choice for production automotive inverters requiring both ruggedness and controllable switching loss.

Availability

IPC100N04S51R7ATMA1 is available at Aetrix Electronics and suitable for automotive BLDC motor control, 12 V DC-DC conversion, and engine control unit (ECU) power distribution requiring stable component supply and long-term lifecycle support.

Supply support for IPC100N04S51R7ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS™-5 product line-engineered specifically for high-current, high-reliability 12 V automotive power conversion, emphasizing low R_DS(on), robust avalanche capability, and AEC-Q101 compliance.

FAQ

What is the maximum allowable gate-source voltage for IPC100N04S51R7ATMA1?

The absolute maximum gate-source voltage is ±20 V. Operation beyond this range risks permanent gate oxide damage. Recommended gate drive is 10 V for full R_DS(on) optimization, with 4.5 V gate plateau voltage confirmed in characterization data-ensuring predictable Miller-effect timing during switching transitions.

Does IPC100N04S51R7ATMA1 include an integrated body diode, and what are its key parameters?

Yes, it features a monolithic body diode with 100 A continuous forward current rating and 400 A pulsed capability. Key parameters include V_SD = 0.8–1.1 V at 50 A and 25 °C, reverse recovery time t_rr = 51.8 ns, and reverse recovery charge Q_rr = 59.4 nC-critical for minimizing commutation losses in synchronous rectification and H-bridge regeneration.

Can IPC100N04S51R7ATMA1 be used in surface-mount reflow processes without moisture preconditioning?

Yes-it is rated MSL1 per JEDEC J-STD-020, meaning it may be subjected to peak reflow temperatures up to 260 °C without prior baking. This eliminates moisture sensitivity handling steps in automated SMT lines, reducing process complexity and cost for high-volume automotive PCB assembly.

How does the thermal resistance R_thJC of 1.3 K/W translate to real-world PCB layout requirements?

R_thJC = 1.3 K/W assumes direct thermal coupling from the exposed drain pad to a ≥6 cm² copper area on a 40 mm × 40 mm FR4 board with 70 µm copper thickness. To achieve rated 100 A current, designers must implement minimum 2 oz copper on the drain layer, thermal vias under the pad, and avoid solder mask over the thermal pad-otherwise junction temperature will exceed 175 °C under full load.