Infineon Technologies IPC100N04S5L1R5ATMA1

Overview

IPC100N04S5L1R5ATMA1 from Infineon Technologies is an AEC-Q101-qualified N-channel logic-level OptiMOS™-5 power MOSFET in PG-TDSON-8-34 package, rated for 40 V V_DS, 1.5 mΩ R_DS(on) at V_GS = 4.5 V, and 100 A continuous drain current at T_C = 25 °C. It supports automotive body control modules, DC-DC converters, and high-current load switching up to 175 °C junction temperature.

For engineers reviewing the IPC100N04S5L1R5ATMA1 datasheet, IPC100N04S5L1R5ATMA1 pinout, IPC100N04S5L1R5ATMA1 application, or IPC100N04S5L1R5ATMA1 equivalent, key selection criteria include its 1.3 K/W R_thJC, 100% avalanche-tested ruggedness, 400 A pulsed drain capability, and MSL1 reflow compatibility - all critical for under-hood automotive power stages.

Technical Context

This device implements a trench-based silicon MOSFET architecture optimized for low R_DS(on) and fast switching in 12 V automotive systems. Its gate threshold voltage (1.2–2.0 V) enables direct logic-level drive from microcontrollers, while its 70–95 nC total gate charge balances switching loss and drive simplicity.

The integrated body diode exhibits 0.8–1.1 V forward voltage at 50 A and 25 °C, with 52 ns reverse recovery time and 60 nC Q_rr, supporting synchronous rectification and freewheeling in buck converters and motor drivers without external diode addition.

Key Specifications

Pinout & Package

Package: PG-TDSON-8-34 - Thermally enhanced 8-pin exposed-drain DSO-style leadless package with 1.3 K/W junction-to-case thermal resistance and MSL1 reflow rating up to 260 °C.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Compared with IPB100N04S5L1R5A and STL220N4LF7AG, IPC100N04S5L1R5ATMA1 delivers superior thermal performance via its PG-TDSON-8-34 package and lowest R_DS(on), making it optimal for space-constrained, high-efficiency automotive power stages where junction temperature control is critical.

Availability

IPC100N04S5L1R5ATMA1 is available at Aetrix Electronics and suitable for automotive body control modules, EPS motor drivers, 12 V DC-DC converters, and HVAC blower control systems requiring stable component supply across extended production lifecycles.

Supply support for IPC100N04S5L1R5ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS™-5 product line, engineered specifically for high-current, high-reliability 12 V automotive power switching applications demanding low R_DS(on), robust avalanche capability, and AEC-Q101 compliance.

FAQ

Is IPC100N04S5L1R5ATMA1 suitable for high-frequency PWM applications?

Yes - with 5–30 ns turn-on/turn-off delay times, 4–14 ns rise/fall times, and 70–95 nC total gate charge, it supports efficient switching up to 500 kHz in hard-switched topologies. Gate drive strength ≥2 A and proper layout (short gate traces, local decoupling) are required to maintain timing integrity and minimize losses.

What is the maximum allowable PCB copper area for thermal performance validation?

The datasheet specifies thermal characterization using a 6 cm² copper area (one layer, 70 µm thick) on FR4, vertically mounted in still air. For optimal R_thJC-based cooling, the exposed drain pad must be connected to ≥6 cm² of internal or external copper, with thermal vias recommended to inner ground planes to enhance heat spreading.

Does this MOSFET require a gate resistor for safe operation?

A gate resistor is strongly recommended - typically 2.2–10 Ω - to dampen gate ringing, limit peak gate current, and control dV/dt during switching. Without it, parasitic inductance can cause oscillation, false triggering, or accelerated gate oxide degradation, especially in high-current or high-dI/dt applications like motor drives.

Can IPC100N04S5L1R5ATMA1 replace older OptiMOS™-3 or -4 devices in existing designs?

Yes - it is a direct drop-in replacement for IPC100N04S4L1R5 and IPC100N04S3L1R5 in PG-TDSON-8 packages, offering identical pinout, improved R_DS(on) (1.5 mΩ vs. 1.8/2.1 mΩ), lower gate charge, and extended 175 °C operation. No layout change is needed, but gate drive timing may require minor adjustment due to faster switching.