Infineon Technologies IPC100N04S5L1R9ATMA1

Overview

IPC100N04S5L1R9ATMA1 from Infineon Technologies is an AEC-Q101-qualified N-channel logic-level power MOSFET in PG-TDSON-8-34 package, rated for 40 V V_DS, 1.9 mΩ R_DS(on) at 10 V_GS, and 100 A continuous drain current at T_C = 25 °C. It delivers high-current switching in automotive body control modules, DC-DC converters, and motor drivers with 175 °C maximum junction temperature and 100% avalanche ruggedness.

For engineers reviewing the IPC100N04S5L1R9ATMA1 datasheet, IPC100N04S5L1R9ATMA1 pinout, IPC100N04S5L1R9ATMA1 application, or IPC100N04S5L1R9ATMA1 equivalent, key selection criteria include R_DS(on) at 4.5 V_GS, thermal resistance (R_thJC = 1.5 K/W), single-pulse avalanche energy (130 mJ), and MSL1 reflow compatibility up to 260 °C.

Technical Context

This OptiMOS™-5 device uses trench-gate superjunction technology optimized for low gate charge (Q_g = 61–81 nC) and fast switching (t_r = 5 ns, t_f = 22 ns), enabling high-efficiency synchronous rectification and PWM-controlled loads. Its logic-level gate threshold (V_GS(th) = 1.2–2.0 V) ensures direct drive from 3.3 V/5 V microcontrollers without level-shifting.

The integrated body diode exhibits low forward voltage (V_SD = 0.8–1.1 V at I_F = 50 A) and fast reverse recovery (t_rr = 51 ns, Q_rr = 54 nC), reducing switching losses in bidirectional topologies like H-bridges and regenerative braking circuits.

Key Specifications

Pinout & Package

Package: PG-TDSON-8-34 - Exposed-drain DSO-8 variant with 3.3 mm × 3.3 mm footprint, 1.0 mm height, and thermally enhanced bottom-side copper pad for optimal heat transfer to PCB.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Compared with STL220N4LF8AG and IRL1404ZPBF, IPC100N04S5L1R9ATMA1 offers the lowest R_DS(on) and best thermal performance in a surface-mount automotive-qualified package, making it optimal for high-density, high-reliability 12 V/24 V power stages.

Availability

IPC100N04S5L1R9ATMA1 is available at Aetrix Electronics and suitable for automotive body electronics, 48 V mild hybrid converters, and electric power steering systems requiring stable component supply across multi-year production cycles.

Supply support for IPC100N04S5L1R9ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS™-5 product line, engineered specifically for high-current, high-efficiency switching in automotive powertrain and chassis systems where low R_DS(on), avalanche robustness, and AEC-Q101 compliance are mandatory.

FAQ

What is the maximum allowable gate-source voltage for IPC100N04S5L1R9ATMA1?

The absolute maximum gate-source voltage is ±16 V. Operation beyond this rating risks permanent gate oxide damage. For reliable long-term performance, gate drive should be clamped to ≤12 V in normal operation and include transient suppression to prevent overshoot during fast switching.

Does IPC100N04S5L1R9ATMA1 have an integrated body diode, and what are its key parameters?

Yes, it features a monolithic body diode with V_SD = 0.8–1.1 V at I_F = 50 A and T_j = 25 °C, t_rr = 51 ns, and Q_rr = 54 nC. These values are measured under standardized conditions (V_R = 20 V, di/dt = 100 A/µs) and support efficient freewheeling in half-bridge and H-bridge configurations.

Can IPC100N04S5L1R9ATMA1 be used in parallel configurations?

Yes, its positive temperature coefficient of R_DS(on) enables current sharing when paralleled. Designers must ensure matched gate drive impedance, symmetrical PCB layout, and thermal coupling to avoid hot-spotting. Derating by 15–20% per device is recommended for sustained >150 A total current.

Is IPC100N04S5L1R9ATMA1 suitable for 48 V battery system applications?

No - its 40 V V_DS rating provides insufficient margin for 48 V nominal systems, which experience transients up to 60–65 V. It is appropriate for 12 V/24 V automotive subsystems only; for 48 V, select 60 V or 75 V rated devices such as IPC200N06S5L-2R2.