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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD023N04NF2SATMA1

Name: IPD023N04NF2SATMA1
Brand: Infineon Technologies
SKU: IPD023N04NF2SATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD023N04NF2SATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD023N04NF2SATMA1.pdf

Description:: TRENCH <= 40V

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Product details

Overview

IPD023N04NF2SATMA1 from Infineon is a 40 V, 2.3 mΩ N-channel enhancement-mode MOSFET in PG-TO252-3 package, rated for 143 A continuous drain current at T_C = 25 °C and 100% avalanche tested. It features low gate charge (Q_g = 68 nC), optimized for high-efficiency synchronous buck converters and motor control stages requiring fast switching and low conduction loss.

For engineers reviewing the IPD023N04NF2SATMA1 datasheet, IPD023N04NF2SATMA1 pinout, IPD023N04NF2SATMA1 application, or IPD023N04NF2SATMA1 equivalent, key selection criteria include R_DS(on) at 10 V and 6 V gate drive, Q_gd/Q_gs ratio for hard-switching robustness, thermal resistance R_thJC = 1.0 °C/W, and integrated body diode recovery performance (t_rr = 44 ns, Q_rr = 45 nC).

Technical Context

This StrongIRFET™2 device uses trench-gate superjunction technology to achieve ultra-low R_DS(on) while maintaining high dV/dt immunity and rugged unclamped inductive switching capability. Its gate threshold voltage (V_GS(th) = 2.2–3.4 V) ensures reliable turn-on with standard 5 V or 3.3 V logic-level drivers.

The MOSFET integrates a fast, low-Q_rr body diode suitable for synchronous rectification in DC/DC converters. Dynamic parameters-including C_iss = 4800 pF, C_oss = 1780 pF, and t_d(on)/t_r/t_d(off)/t_f = 16/15/35/15 ns-are characterized at V_DD = 20 V, I_D = 70 A, and R_G,ext = 1.6 Ω, enabling precise loss modeling in high-frequency power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage for 12 V and 24 V input systems with margin against transients.
R_DS(on) max	2.3 mΩ at V_GS = 10 V, I_D = 70 A - Enables <1.1 W conduction loss at 70 A, critical for high-current POL converters.
I_D cont	143 A at T_C = 25 °C - Supports high-current motor phases and battery protection switches without parallel devices.
Q_g	68 nC (0–10 V) - Low total gate charge reduces driver power and enables >1 MHz operation with moderate gate resistance.
R_thJC	1.0 °C/W - Allows 150 W power dissipation with ≤150 K junction-to-case temperature rise, simplifying heatsink design.
t_rr	44 ns at dI_F/dt = 100 A/μs - Fast body diode recovery minimizes shoot-through risk and switching loss in synchronous FETs.
E_AS	167 mJ - Rated single-pulse avalanche energy supports robust operation during load dump or inductive fault events.

Pinout & Package

PG-TO252-3 (DPAK) package with exposed drain tab for low-inductance, high-current PCB mounting. Drain connected to copper tab on underside; no isolation required when mounted to heatsink.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Accepts 0–20 V gate drive; threshold at 2.2–3.4 V enables direct microcontroller interface with level-shifting.
Pin 2 (Drain) + Tab	High-side power path	Tab is electrically connected to Pin 2; must be soldered to large copper pour for thermal and current handling.
Pin 3 (Source)	Reference node / return path	Serves as local ground reference for gate driver; requires low-inductance connection to minimize ringing.

Key Features

Feature	Design Value
N-channel normal-level logic	V_GS(th) range (2.2–3.4 V) ensures compatibility with 3.3 V and 5 V controllers without external level shifters.
100% avalanche tested	Guarantees survivability under unclamped inductive switching up to E_AS = 167 mJ, eliminating need for external snubbers in many designs.
Pb-free, halogen-free	RoHS-compliant lead plating and IEC61249-2-21 compliance enable use in automotive and industrial applications with strict environmental requirements.
Optimized for wide-range applications	Validated across motor drives, DC/DC converters, e-fuse circuits, and battery management systems per JEDEC qualification standards.

Applications

Server VRM

Automotive Body Control Module

Use Scenario: High-current point-of-load converter supplying CPU core voltage (0.8–1.2 V @ up to 120 A).

IC Role / Device Role / Timing Role: Synchronous high-side switch in multiphase buck topology operating at 500 kHz–1 MHz.

Use Value: 2.3 mΩ R_DS(on) and 68 nC Q_g reduce both conduction and switching losses, improving efficiency by ≥1.2% versus 3.0 mΩ alternatives at 70 A.

Use Scenario: Load switch for headlight or HVAC blower motor in 12 V vehicle electrical system.

IC Role / Device Role / Timing Role: High-side power switch controlled by MCU GPIO with integrated overcurrent and thermal protection.

Use Value: 143 A rating and 167 mJ avalanche energy allow direct replacement of mechanical relays, reducing size and enabling PWM dimming without external flyback diodes.

Industrial Motor Drive

Energy Storage System BMS

Use Scenario: Half-bridge leg in 24 V BLDC inverter driving conveyor belt motors.

IC Role / Device Role / Timing Role: Low-side switching element with fast body diode for freewheeling current commutation.

Use Value: 44 ns reverse recovery time and 45 nC Q_rr cut switching loss by 35% compared to standard MOSFETs, enabling cooler operation at 20 kHz PWM.

Use Scenario: Cell-balancing and main contactor switch in lithium-ion battery pack (up to 48 V nominal).

IC Role / Device Role / Timing Role: Solid-state e-fuse and isolation switch with real-time current sensing via R_DS(on) monitoring.

Use Value: 1.0 °C/W R_thJC enables accurate thermal derating down to -40 °C ambient, supporting UL 1973 and IEC 62619 compliance testing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB023N04NGATMA1	Same R_DS(on) (2.3 mΩ), but in PG-TO263-3 package with higher R_thJC = 0.9 °C/W and larger footprint.	Better thermal performance in space-constrained layouts where TO252 footprint is insufficient.	Select when board area allows larger package and junction temperature margin is prioritized over cost or assembly simplicity.
IRL1404ZPBF	Higher R_DS(on) = 4.0 mΩ, lower I_D = 160 A, Q_g = 91 nC, and no avalanche rating.	Legacy design replacement where efficiency and ruggedness are secondary to legacy qualification status.	Use only for cost-sensitive, non-safety-critical 12 V systems with <50 A load and no transient stress requirements.

Compared with IPB023N04NGATMA1, this part offers identical electrical specs in a smaller, lower-cost DPAK package-ideal for compact DC/DC modules-while IRl1404ZPBF trades efficiency and ruggedness for broader legacy availability in low-performance applications.

Availability

IPD023N04NF2SATMA1 is available at Aetrix Electronics and suitable for server VRMs, automotive body control modules, industrial motor drives, and energy storage system BMS requiring stable component supply and full JEDEC-qualified reliability.

Supply support for IPD023N04NF2SATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q101.

This device belongs to the StrongIRFET™2 family-designed specifically for high-current, high-efficiency power conversion in automotive, industrial, and computing applications where low R_DS(on), fast switching, and avalanche ruggedness are mandatory.

FAQ

What is the maximum recommended gate-source voltage for continuous operation?

The absolute maximum V_GS is ±20 V, but Infineon specifies 10 V as the optimal gate drive voltage for achieving rated R_DS(on) and minimizing gate oxide stress. Operation at 12–15 V is permissible for improved switching speed, provided gate driver slew rate and layout inductance are controlled to avoid overshoot exceeding 20 V.

Is the body diode suitable for synchronous rectification in a 500 kHz buck converter?

Yes-the body diode exhibits t_rr = 44 ns and Q_rr = 45 nC at dI_F/dt = 100 A/μs, enabling clean commutation with minimal reverse recovery loss. For best results, pair with a gate driver that provides strong turn-off capability (≤1 Ω source impedance) to suppress diode oscillation during hard commutation.

Does this MOSFET require a heatsink when operating at 100 A continuous current?

At 100 A and R_DS(on) = 2.3 mΩ, conduction loss is ~23 W. With R_thJC = 1.0 °C/W and typical PCB thermal resistance of ~25 °C/W to ambient, junction temperature exceeds 150 °C without a heatsink. A minimum 15 cm² copper pour plus bolted aluminum heatsink (R_thHA ≤ 5 °C/W) is required for reliable 100 A operation at 25 °C ambient.

How does the avalanche rating impact system-level reliability in motor drive applications?

The 167 mJ single-pulse avalanche rating validates operation during worst-case inductive turn-off events-such as sudden motor stall or cable disconnect-without failure. This eliminates the need for external clamping circuits in Class A/B industrial drives, reducing BOM count and improving long-term field reliability under repetitive fault conditions.

IPD023N04NF2SATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: StrongIRFET™2

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 27A (Ta), 143A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 2.3mOhm @ 70A, 10V

Vgs(th) (Max) @ Id:: 3.4V @ 81µA

Gate Charge (Qg) (Max) @ Vgs:: 102 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4800 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 3W (Ta), 150W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3

IPD023N04NF2SATMA1 FAQ

1.How can I place an order for IPD023N04NF2SATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD023N04NF2SATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD023N04NF2SATMA1 reliable?

The price and inventory of IPD023N04NF2SATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD023N04NF2SATMA1 is usually 5 days.

3.What payment methods are accepted for IPD023N04NF2SATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD023N04NF2SATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD023N04NF2SATMA1?

IPD023N04NF2SATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD023N04NF2SATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD023N04NF2SATMA1?

For technical support, including IPD023N04NF2SATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD023N04NF2SATMA1 requirements.

6.How does Aetrix verify that IPD023N04NF2SATMA1 is sourced from the original manufacturer or authorized distributors?

All IPD023N04NF2SATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD023N04NF2SATMA1 meets industry standards.

7.What is the process for return or replacement of IPD023N04NF2SATMA1?

All IPD023N04NF2SATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD023N04NF2SATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD023N04NF2SATMA1 part is unused and in its original packaging.

Return procedure for IPD023N04NF2SATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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