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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD028N06NF2SATMA1

Name: IPD028N06NF2SATMA1
Brand: Infineon Technologies
SKU: IPD028N06NF2SATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD028N06NF2SATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD028N06NF2SATMA1.pdf

Description:: TRENCH 40<-<100V

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Product details

Overview

IPD028N06NF2SATMA1 from Infineon is a 60 V, 2.85 mΩ N-channel enhancement-mode MOSFET in PG-TO252-3 package, optimized for high-current switching in DC-DC converters and motor drives. It delivers 139 A continuous drain current at T_C = 25 °C, features 100% avalanche-tested ruggedness, and supports fast switching with 68 nC total gate charge and 1.0 °C/W junction-to-case thermal resistance.

For engineers reviewing the IPD028N06NF2SATMA1 datasheet, IPD028N06NF2SATMA1 pinout, IPD028N06NF2SATMA1 application, or IPD028N06NF2SATMA1 equivalent, key selection criteria include R_DS(on) at 10 V drive, pulsed current capability (556 A), thermal performance under PCB-constrained cooling, and integrated body diode recovery characteristics (t_rr = 41 ns @ 100 A/μs).

Technical Context

This StrongIRFET™2 device uses trench-gate superjunction technology to achieve low conduction loss while maintaining robust switching behavior. Its 60 V V_(BR)DSS rating and 2.85 mΩ R_DS(on) are specified at V_GS = 10 V and I_D = 70 A, with gate threshold voltage tightly distributed between 2.1–3.3 V.

The MOSFET integrates a fast-recovery body diode with 106 A continuous forward current capability and reverse recovery charge Q_rr of 44 nC (100 A/μs) or 120 nC (500 A/μs), enabling synchronous rectification in high-frequency buck converters without external diode supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	60 V - Maximum blocking voltage before avalanche onset; defines upper limit for input rail in 48 V systems.
R_DS(on), max	2.85 mΩ - Measured at V_GS = 10 V, I_D = 70 A; determines conduction loss in high-current power stages.
I_D, cont	139 A - Continuous drain current at T_C = 25 °C with 50 °C/W thermal resistance; sets PCB copper area requirement.
Q_g, total	68 nC - Gate charge from 0 to 10 V at V_DS = 30 V, I_D = 70 A; directly impacts driver IC sizing and switching loss.
t_rr	41 ns - Reverse recovery time at dI/dt = 100 A/μs; enables <1 MHz operation in hard-switched topologies.
R_thJC	1.0 °C/W - Junction-to-case thermal resistance; allows direct heatsink mounting via drain tab for thermal management.
V_GS(th)	2.1–3.3 V - Gate threshold range; ensures reliable turn-on with standard 3.3 V or 5 V logic-level drivers.

Pinout & Package

IPD028N06NF2SATMA1 uses the PG-TO252-3 (DPAK) surface-mount package with exposed drain tab for thermal and electrical connection. The drain connects to the metal pad (Tab), enabling low-inductance, high-current paths and efficient heat transfer to PCB copper.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives gate drive signal; requires low-impedance path to minimize ringing during fast switching.
Pin 2 / Tab (Drain)	High-side power terminal	Primary current-carrying node; electrically and thermally connected to PCB copper pour for dissipation.
Pin 3 (Source)	Reference and return path	Serves as local ground reference for gate drive; must be routed with minimal inductance to avoid shoot-through risk.

Key Features

Feature	Design Value
StrongIRFET™2 trench technology	Enables 2.85 mΩ R_DS(on) at 60 V rating-reducing conduction loss by >25% vs. prior-generation DPAK MOSFETs.
100% avalanche tested	Guarantees single-pulse avalanche energy E_AS = 192 mJ at I_D = 70 A-critical for unclamped inductive switching reliability.
Pb-free & halogen-free	Complies with RoHS and IEC61249-2-21; eliminates hazardous substances without compromising solderability or thermal cycling performance.
Optimized gate charge profile	Q_gs = 21 nC and Q_gd = 13 nC enable controlled Miller plateau transition-reducing voltage overshoot and EMI in hard-switched converters.

Applications

Server VRM Power Stage

Industrial BLDC Motor Inverter

Use Scenario: High-density 48 V input buck converter supplying CPU core voltage with <100 ns switching transitions.

IC Role / Device Role / Timing Role: Primary high-side switch in multiphase synchronous buck topology; operates at 500 kHz–1 MHz with 10 V gate drive.

Use Value: 2.85 mΩ R_DS(on) minimizes I²R loss at 100+ A phase current; 1.0 °C/W R_thJC enables direct thermal coupling to VRM heatsink.

Use Scenario: 3-phase inverter driving 1–5 kW permanent-magnet BLDC motors in factory automation equipment.

IC Role / Device Role / Timing Role: Low-side switching element in 60 V-rated half-bridge leg; commutated at ≤20 kHz with active freewheeling.

Use Value: 106 A continuous body diode current supports bidirectional regenerative braking; 41 ns t_rr prevents cross-conduction during PWM dead-time.

Telecom Rectifier Module

EV Onboard Charger (OBC) PFC Stage

Use Scenario: 48 V telecom rectifier with active OR-ing and hot-swap protection across redundant power feeds.

IC Role / Device Role / Timing Role: OR-ing FET in back-to-back configuration; biased in linear region for current limiting and reverse blocking.

Use Value: 60 V V_(BR)DSS withstands transient surges up to 57 V; 2.85 mΩ R_DS(on) limits forward drop to <300 mV at 100 A.

Use Scenario: Boost PFC switch in 3.3 kW single-phase OBC operating at 65–100 kHz with interleaved topology.

IC Role / Device Role / Timing Role: Main switching transistor handling 12–15 A RMS current; driven by dedicated gate driver with adaptive dead-time control.

Use Value: 68 nC Q_g balances switching speed and driver power consumption; 192 mJ E_AS absorbs line-voltage transients during boost diode reverse recovery.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N6F7AG	R_DS(on) = 2.2 mΩ (lower), but V_(BR)DSS = 60 V same; Q_g = 72 nC (higher); TO-263-3 package.	Better conduction efficiency at lower currents; higher gate drive power required; larger footprint than DPAK.	Select when board space permits TO-263 and lowest possible R_DS(on) dominates over gate drive complexity.
IXTP130N065T2	R_DS(on) = 3.3 mΩ (higher), V_(BR)DSS = 65 V; Q_g = 52 nC (lower); TO-220FP package with isolated tab.	Higher voltage margin useful in 60 V industrial rails; lower Q_g eases gate driver design; through-hole mounting only.	Select for legacy through-hole assembly or where 65 V rating provides critical margin against line transients.

Compared with STL220N6F7AG and IXTP130N065T2, IPD028N06NF2SATMA1 offers optimal balance of low R_DS(on), moderate Q_g, DPAK surface-mount compatibility, and proven avalanche ruggedness-making it preferred for space-constrained, high-reliability 48–60 V power stages.

Availability

IPD028N06NF2SATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial BLDC inverters, and telecom rectifier modules requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle support.

Supply support for IPD028N06NF2SATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q101 standards.

This part belongs to the StrongIRFET™2 family-designed specifically for high-efficiency, high-current DC-DC conversion and motor control in datacenter, industrial, and telecom infrastructure where thermal density and reliability are critical.

FAQ

What is the maximum allowable case temperature for continuous operation?

The absolute maximum case temperature is 175 °C per datasheet Table 2. For continuous 139 A operation, the PCB must maintain T_C ≤ 25 °C using ≥6 cm² of 70 μm copper on FR4. At T_C = 100 °C, derated I_D drops to 107 A-verified in Figure 2 of the datasheet.

Does this MOSFET require a negative gate turn-off voltage?

No. The gate threshold voltage range is 2.1–3.3 V, and the device is fully enhanced at V_GS = 0 V. Negative gate bias is not required for safe operation, though −5 V may be used to improve noise immunity in high-dV/dt environments per Infineon's application note AN2015-04.

Can IPD028N06NF2SATMA1 replace IPD038N06N in an existing design?

Yes-with validation. IPD028N06NF2SATMA1 has 26% lower R_DS(on) (2.85 vs. 3.8 mΩ) and identical 60 V rating and PG-TO252-3 package. Layout changes are unnecessary, but gate drive strength must handle +12% higher Q_g (68 vs. 61 nC), and thermal design should account for increased power density.

Is the body diode suitable for synchronous rectification in a 1 MHz buck converter?

Yes-the body diode's 41 ns t_rr and 44 nC Q_rr (at 100 A/μs) meet requirements for 1 MHz operation when paired with precise dead-time control. However, for highest efficiency, external Schottky clamping is recommended above 700 kHz due to diode forward voltage (0.92–1.1 V) and associated conduction loss.

IPD028N06NF2SATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: StrongIRFET™2

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 24A (Ta), 139A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 2.85mOhm @ 70A, 10V

Vgs(th) (Max) @ Id:: 3.3V @ 80µA

Gate Charge (Qg) (Max) @ Vgs:: 102 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4600 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 3W (Ta), 150W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3

IPD028N06NF2SATMA1 FAQ

1.How can I place an order for IPD028N06NF2SATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD028N06NF2SATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD028N06NF2SATMA1 reliable?

The price and inventory of IPD028N06NF2SATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD028N06NF2SATMA1 is usually 5 days.

3.What payment methods are accepted for IPD028N06NF2SATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD028N06NF2SATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD028N06NF2SATMA1?

IPD028N06NF2SATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD028N06NF2SATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD028N06NF2SATMA1?

For technical support, including IPD028N06NF2SATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD028N06NF2SATMA1 requirements.

6.How does Aetrix verify that IPD028N06NF2SATMA1 is sourced from the original manufacturer or authorized distributors?

All IPD028N06NF2SATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD028N06NF2SATMA1 meets industry standards.

7.What is the process for return or replacement of IPD028N06NF2SATMA1?

All IPD028N06NF2SATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD028N06NF2SATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD028N06NF2SATMA1 part is unused and in its original packaging.

Return procedure for IPD028N06NF2SATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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