Infineon Technologies IPD040N03LGATMA1

Overview

IPD040N03LGATMA1 from Infineon Technologies is an N-channel logic-level power MOSFET in PG-TO252-3-11 package, rated for 30 V V_DS, 4.0 mΩ R_DS(on) at V_GS = 10 V, and 90 A continuous drain current at T_C = 25 °C. It is optimized for high-efficiency DC/DC converters and SMPS primary-side switching with avalanche rating and JEDEC-qualified reliability.

For engineers reviewing the IPD040N03LGATMA1 datasheet, IPD040N03LGATMA1 pinout, IPD040N03LGATMA1 application, or IPD040N03LGATMA1 equivalent, key selection criteria include its low gate charge × R_DS(on) figure of merit (FOM), 38 nC total gate charge at 10 V, 66 A diode forward current capability, and thermal resistance of 1.9 K/W junction-to-case - critical for thermally constrained board-level designs.

Technical Context

This OptiMOS®3 device uses trench-based silicon technology to achieve ultra-low on-resistance and fast switching performance. Its logic-level gate threshold (1–2.2 V) enables direct drive from 3.3 V or 5 V controllers, while the 3.0 V gate plateau voltage supports stable Miller region control during hard-switching transitions.

The integrated body diode exhibits 0.83–1.1 V forward voltage at 30 A and 25 °C, with 20 nC reverse recovery charge under 400 A/µs di/dt - enabling synchronous rectification and freewheeling in buck, half-bridge, and OR-ing applications without external Schottky supplementation.

Key Specifications

Pinout & Package

IPD040N03LGATMA1 is housed in a surface-mount PG-TO252-3-11 (D-Pak) package with exposed drain tab for thermal and electrical connection. The package features gull-wing leads and is RoHS-compliant with Pb-free plating.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with IRL3803PBF and BSC040N03LS, IPD040N03LGATMA1 uniquely combines TO252's robust thermal interface, JEDEC qualification, and 60 mJ avalanche rating - making it optimal for industrial and automotive DC/DC where reliability under transient stress is non-negotiable.

Availability

IPD040N03LGATMA1 is available at Aetrix Electronics and suitable for server VRMs, automotive camera power supplies, industrial PLC I/O modules, and USB-C PD adapters requiring stable component supply across extended production lifecycles.

Supply support for IPD040N03LGATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to the OptiMOS®3 product line, engineered specifically for high-efficiency, high-current DC/DC conversion in computing, automotive, and industrial power systems where low R_DS(on) and fast switching are critical.

FAQ

Is IPD040N03LGATMA1 suitable for synchronous rectification in flyback converters?

Yes. Its 0.83–1.1 V body diode forward voltage at 30 A and 25 °C, combined with 20 nC reverse recovery charge and 66 A continuous diode current rating, enables efficient synchronous rectification in 65 W USB-C PD adapters. Gate drive timing must account for its 3.0 V plateau voltage to avoid shoot-through.

What is the maximum PCB copper area required for thermal performance at full 90 A current?

At T_C = 25 °C, full 90 A rating assumes a 6 cm² copper area (single-layer, 70 µm thick) connected to the drain tab on FR4. For sustained 90 A operation, a vertical PCB orientation in still air and additional heatsinking are recommended to maintain T_j ≤ 175 °C given its 1.9 K/W R_thJC.

Does IPD040N03LGATMA1 require a gate resistor for EMI suppression in 500 kHz buck converters?

Yes. A 1.6 Ω gate resistor is specified in the datasheet for switching characterization at 500 kHz. This value damps gate ringing, controls di/dt, and reduces EMI without significantly increasing switching loss - especially important given its 38 nC Q_g and fast 6.8 ns rise time.

Can this MOSFET replace older OptiMOS®2 devices like IPD050N03LG?

Yes, with design verification. IPD040N03LGATMA1 offers 20% lower R_DS(on) (4.0 vs. 5.0 mΩ), identical 30 V rating and PG-TO252-3-11 package, and improved FOM. Layout remains compatible, but gate drive timing and thermal margins should be rechecked due to higher peak currents enabled by lower on-resistance.