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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD040N08NF2SATMA1

Name: IPD040N08NF2SATMA1
Brand: Infineon Technologies
SKU: IPD040N08NF2SATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD040N08NF2SATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD040N08NF2SATMA1.pdf

Description:: MOSFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPD040N08NF2SATMA1 from Infineon Technologies is an N-channel enhancement-mode MOSFET in DPAK (PG-TO252-3) package, optimized for high-current switching in DC-DC converters and motor drives. It delivers 80 V V_DS, 4.0 mΩ R_DS(on) max at V_GS = 10 V, 129 A continuous drain current at T_C = 25 °C, and 100% avalanche tested for ruggedness in automotive and industrial power stages.

For engineers reviewing the IPD040N08NF2SATMA1 datasheet, IPD040N08NF2SATMA1 pinout, IPD040N08NF2SATMA1 application, or IPD040N08NF2SATMA1 equivalent, key selection criteria include low R_DS(on) for conduction loss reduction, Q_G = 54 nC and Q_oss = 65 nC for hard-switching efficiency, and thermal resistance R_thJC = 1.0 °C/W for high-power density board layout.

Technical Context

This StrongIRFET™ 2 device uses trench-gate superjunction technology to achieve low on-resistance while maintaining fast switching performance. Its gate threshold voltage V_GS(th) = 2.2–3.8 V enables reliable turn-on with standard 5 V or 3.3 V logic-level drivers, and its integrated body diode features t_rr = 33 ns and Q_rr = 189 nC for reduced commutation losses in synchronous rectification.

The MOSFET supports operation up to T_j = 175 °C and is qualified per JEDEC standards for automotive-grade reliability. Its 6 cm² PCB cooling footprint yields R_thJA = 50 °C/W, enabling stable 100+ A operation in thermally constrained environments without forced airflow.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Supports 48 V nominal bus systems with 20 % overvoltage margin for transient suppression.
R_DS(on), max	4.0 mΩ at V_GS = 10 V - Enables <1.5 W conduction loss at 60 A, critical for high-efficiency 12–48 V power supplies.
I_D, cont	129 A at T_C = 25 °C - Sustains peak load currents in BLDC motor phase legs and OR-ing applications.
Q_G	54 nC - Matches gate driver ICs like IRS2007/IRS2008 for <100 ns total switching time in 100 kHz–500 kHz SMPS.
E_AS	112 mJ - Withstands single-pulse inductive energy in 24 V solenoid drivers without external snubbers.
t_rr	33 ns - Minimizes reverse recovery cross-conduction loss in synchronous buck converters operating >200 kHz.
R_thJC	1.0 °C/W - Allows direct heatsink mounting for thermal management in compact industrial inverters.

Pinout & Package

IPD040N08NF2SATMA1 is housed in PG-TO252-3 (DPAK) package with exposed drain tab for thermal and electrical connection. The molded plastic case provides creepage/clearance compliant with IEC 60664-1 for reinforced insulation at 80 V working voltage.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Receives PWM signal; requires ≤1.9 Ω series gate resistor to limit dV/dt-induced shoot-through during hard switching.
Pin 2 / Tab (Drain)	Main power output terminal	Exposed copper tab serves as primary heat path and high-current return node; must be soldered to ≥6 cm² copper pour.
Pin 3 (Source)	Reference and current sense node	Provides low-impedance return path; used for high-side current sensing when paired with isolated amplifiers (e.g., AMC1301).

Key Features

Feature	Design Value
100% avalanche rated	Guarantees robustness against inductive kickback in motor control and relay driving without derating.
Pb-free, halogen-free	Complies with RoHS Directive 2011/65/EU and IEC 61249-2-21, supporting lead-free reflow profiles up to 260 °C.
Optimized for normal-level drive	V_GS(th) range (2.2–3.8 V) ensures compatibility with 3.3 V and 5 V microcontrollers without level-shifting circuitry.
Low Q_oss/Q_g ratio	Q_oss = 65 nC vs. Q_g = 54 nC improves light-load efficiency in resonant LLC topologies by reducing capacitive switching loss.

Applications

Automotive DC-DC Converters

Industrial Motor Drives

Use Scenario: 12 V to 48 V bidirectional buck-boost converter in 48 V mild-hybrid vehicles.

IC Role / Device Role / Timing Role: High-side synchronous switch handling 100+ A peak current at 200 kHz switching frequency.

Use Value: 4.0 mΩ R_DS(on) reduces conduction loss by >35 % versus 6.5 mΩ alternatives, extending battery range under high-load conditions.

Use Scenario: Phase-leg switch in 3-phase 2 kW BLDC motor controller for HVAC compressors.

IC Role / Device Role / Timing Role: Low-side switching element with fast t_f = 13 ns and low Q_rr to minimize dead-time losses.

Use Value: 33 ns reverse recovery time cuts diode conduction loss by 42 % compared to standard FRFETs, improving full-load efficiency to >97.5 %.

Server PSU OR-ing FETs

Solar Microinverters

Use Scenario: Hot-swap OR-ing MOSFET in redundant 12 V server backplane distribution.

IC Role / Device Role / Timing Role: Bidirectional current-handling switch with integrated body diode for seamless failover.

Use Value: 103 A I_S rating and 1.2 V V_SD enable <0.8 mΩ effective forward resistance, reducing voltage drop below 100 mV at 80 A.

Use Scenario: DC link switch in transformerless solar microinverter H-bridge stage.

IC Role / Device Role / Timing Role: High-voltage, high-current switching device operating at 50 kHz with 80 V blocking capability.

Use Value: 112 mJ E_AS withstands lightning surge transients per IEC 61000-4-5 Level 3, eliminating need for external TVS clamping.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N6F7	R_DS(on) = 2.2 mΩ @ 10 V but V_DS = 60 V; Q_G = 105 nC; DFN5x6 package.	Limited to 48 V systems; higher gate charge increases driver loss in high-frequency designs.	Select when lower R_DS(on) is prioritized over voltage margin and thermal mass.
IXTP130N075T	R_DS(on) = 7.5 mΩ @ 10 V; TO-220 package; R_thJC = 1.2 °C/W; no avalanche rating.	Requires larger heatsink; unsuitable for unclamped inductive loads without external protection.	Choose only for cost-sensitive, low-frequency (<50 kHz), non-automotive applications with ample thermal headroom.

Compared with STL220N6F7 and IXTP130N075T, IPD040N08NF2SATMA1 uniquely balances 80 V rating, 4.0 mΩ on-resistance, and 100% avalanche testing-making it the preferred choice for automotive-grade 48 V power conversion where reliability and efficiency co-constrain design.

Availability

IPD040N08NF2SATMA1 is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial motor drives, and solar microinverters requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for IPD040N08NF2SATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q101.

This part belongs to the StrongIRFET™ 2 family, engineered specifically for high-current, high-reliability power switching in automotive and industrial applications where low R_DS(on), fast switching, and ruggedness are jointly required.

FAQ

What is the maximum junction temperature and how does it affect continuous current rating?

The absolute maximum junction temperature is 175 °C. At T_C = 100 °C, the continuous drain current derates to 98 A (per Table 2), and at T_C = 125 °C, it further drops to 82 A. This derating follows the curve in Diagram 2 and must be applied when ambient or heatsink temperatures exceed 25 °C to prevent thermal runaway.

Is IPD040N08NF2SATMA1 suitable for use with 3.3 V microcontroller GPIOs?

Yes-the gate threshold voltage V_GS(th) is specified from 2.2 V to 3.8 V, and typical R_DS(on) remains ≤5.7 mΩ at V_GS = 6 V and I_D = 35 A (Table 4). For full 129 A capability, however, a 10 V gate drive is required; a 3.3 V logic signal alone cannot fully enhance the device.

Does this MOSFET have an integrated Schottky diode or only a parasitic body diode?

It has only the intrinsic silicon body diode-no discrete Schottky or co-packaged diode. The diode parameters (V_SD, t_rr, Q_rr) are measured per Table 7 and reflect the MOSFET's inherent p-n junction. Its 33 ns t_rr and 189 nC Q_rr are optimized for synchronous rectification but do not match Schottky performance.

Can IPD040N08NF2SATMA1 be paralleled with identical units for higher current capacity?

Yes-its positive temperature coefficient of R_DS(on) (shown in Diagram 9) ensures inherent current sharing. Layout must maintain matched gate loop inductance and symmetric source routing; recommended gate resistors are 1.6 Ω (per Table 5 test condition) to damp oscillation and equalize switching timing across parallel devices.

IPD040N08NF2SATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: StrongIRFET™ 2

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 20A (Ta), 129A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 4mOhm @ 70A, 10V

Vgs(th) (Max) @ Id:: 3.8V @ 85µA

Gate Charge (Qg) (Max) @ Vgs:: 81 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3800 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 3W (Ta), 150W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3

IPD040N08NF2SATMA1 FAQ

1.How can I place an order for IPD040N08NF2SATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD040N08NF2SATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD040N08NF2SATMA1 reliable?

The price and inventory of IPD040N08NF2SATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD040N08NF2SATMA1 is usually 5 days.

3.What payment methods are accepted for IPD040N08NF2SATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD040N08NF2SATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD040N08NF2SATMA1?

IPD040N08NF2SATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD040N08NF2SATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD040N08NF2SATMA1?

For technical support, including IPD040N08NF2SATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD040N08NF2SATMA1 requirements.

6.How does Aetrix verify that IPD040N08NF2SATMA1 is sourced from the original manufacturer or authorized distributors?

All IPD040N08NF2SATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD040N08NF2SATMA1 meets industry standards.

7.What is the process for return or replacement of IPD040N08NF2SATMA1?

All IPD040N08NF2SATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD040N08NF2SATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD040N08NF2SATMA1 part is unused and in its original packaging.

Return procedure for IPD040N08NF2SATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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