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Infineon Technologies IPD055N08NF2SATMA1

Part No.:
IPD055N08NF2SATMA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixIPD055N08NF2SATMA1.pdf
Description:
MOSFET
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,240

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Product details

Overview

IPD055N08NF2SATMA1 from Infineon Technologies is an N-channel enhancement-mode power MOSFET in DPAK (PG-TO252-3) package, optimized for high-efficiency DC-DC conversion and motor control. It delivers 80 V VDS, 5.5 mΩ RDS(on) max at VGS = 10 V, 98 A continuous drain current, and 44 nC Qoss, enabling low conduction and switching losses in synchronous buck converters.

For engineers reviewing the IPD055N08NF2SATMA1 datasheet, IPD055N08NF2SATMA1 pinout, IPD055N08NF2SATMA1 application, or IPD055N08NF2SATMA1 equivalent, key selection criteria include its 1.4 °C/W RthJC, 100% avalanche-tested ruggedness, gate plateau voltage of 5 V, and strongIRFET™ 2 architecture for fast turn-on/turn-off with minimal gate drive energy.

Technical Context

This MOSFET employs trench-gate superjunction technology to achieve low RDS(on) × Qg figure-of-merit (219 mΩ·nC), supporting high-frequency operation up to 1 MHz in hard-switched topologies. Its 36 nC total gate charge and 8 nC Qgd ensure controlled dV/dt and reduced Miller-induced shoot-through risk.

The integrated body diode exhibits 154 nC Qrr and 30 ns trr at 500 A/µs diF/dt, making it suitable for freewheeling in synchronous rectification where reverse recovery behavior directly impacts efficiency and EMI.

Key Specifications

ParameterValue and Actual Design Meaning
VDS80 V - supports 48 V bus systems with 20 % safety margin against transients
RDS(on), max5.5 mΩ at VGS = 10 V - enables ≤ 52 W conduction loss at 100 A, critical for thermal management in compact PCB layouts
ID, cont98 A at TC = 25 °C - sustains high-current loads in industrial motor drives without forced cooling
Qg36 nC - reduces gate driver power demand and allows use of low-cost 1-A peak drivers
EAS54 mJ - withstands single-pulse inductive energy in relay/snubber-free solenoid control
RthJC1.4 °C/W - enables direct heatsink mounting for >100 W power dissipation with <140 °C junction rise
Qoss44 nC - lowers capacitive switching loss during hard-commutation in LLC resonant converters

Pinout & Package

IPD055N08NF2SATMA1 uses the PG-TO252-3 (DPAK) package with exposed drain tab for thermal and electrical connection. The plastic body measures 6.7 mm × 6.2 mm × 2.3 mm, and the copper tab occupies the full bottom surface for optimal heat transfer.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Gate)Control inputReceives 10 V logic-level drive; 1.3 Ω internal gate resistance limits ringing and simplifies layout
Pin 2 / Tab (Drain)High-side power nodeExposed metal tab serves as primary drain terminal and thermal path-must be soldered to ≥6 cm² copper pour
Pin 3 (Source)Reference returnProvides Kelvin sense path for accurate current monitoring; ties to power ground plane with low-inductance routing

Key Features

FeatureDesign Value
100 % avalanche testedGuarantees robustness under unclamped inductive switching-no derating needed for flyback or H-bridge regeneration
StrongIRFET™ 2 architectureOptimized cell pitch and trench depth reduce RDS(on) × Qg by 22 % vs. prior generation, improving light-load efficiency
Pb-free, halogen-freeComplies with IEC61249-2-21 and RoHS-supports lead-free reflow profiles up to 260 °C peak
VGS(th) = 2.2–3.8 VEnables reliable turn-on with standard 3.3 V or 5 V microcontroller GPIO, eliminating level-shifter requirement

Applications

Motor Drive InverterSynchronous Buck Converter

Use Scenario: Half-bridge leg in 24–48 V BLDC motor controllers for automated guided vehicles.

IC Role / Device Role / Timing Role: High-side and low-side switching element with fast 7 ns fall time to minimize dead-time losses.

Use Value: 5.5 mΩ RDS(on) cuts conduction loss by 37 % versus 8.5 mΩ alternatives, extending battery runtime by >8 % at 50 A load.

Use Scenario: Main switch in 400 kHz, 12 V → 1.2 V VRM for FPGA power delivery.

IC Role / Device Role / Timing Role: Primary high-side FET synchronized to PWM controller with 14 ns turn-on delay for precise duty-cycle control.

Use Value: 44 nC Qoss reduces output capacitance discharge loss, lowering temperature rise by 12 °C at 80 A output.

Industrial Power SupplySolenoid & Relay Driver

Use Scenario: Primary-side switch in 500 W telecom rectifier with active clamp forward topology.

IC Role / Device Role / Timing Role: Hard-switched main transistor handling 80 V DC link with 54 mJ single-pulse avalanche rating.

Use Value: 1.4 °C/W RthJC allows direct heatsink mounting-eliminates thermal interface material and reduces assembly cost by $0.32/unit.

Use Scenario: Low-side driver for 24 V, 5 A solenoid in factory automation I/O modules.

IC Role / Device Role / Timing Role: Fast-turnoff switch suppressing inductive kickback using integrated body diode with 30 ns trr.

Use Value: 154 nC Qrr minimizes diode reverse recovery loss, reducing EMI filter size by 30 % compared to standard FRD-based solutions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STL110N8F7AGRDS(on) = 5.8 mΩ, Qg = 42 nC, same DPAK packageHigher gate charge increases driver loss by 17 %; slightly lower avalanche rating (45 mJ)Acceptable where gate drive capability exceeds 1.2 A peak and system transient stress is limited
IXTP50N075TRDS(on) = 7.5 mΩ, TO-220 package, no integrated diode optimizationLarger footprint and higher RDS(on) increase board area and conduction loss by 36 %Only suitable when legacy TO-220 mounting is required and thermal budget permits 20 °C higher junction temp

Compared with STL110N8F7AG and IXTP50N075T, IPD055N08NF2SATMA1 offers the lowest RDS(on) × Qg product and best thermal resistance in DPAK, making it optimal for space-constrained, high-efficiency 48 V systems requiring minimal heatsinking.

Availability

IPD055N08NF2SATMA1 is available at Aetrix Electronics and suitable for motor drive inverters, synchronous buck converters, industrial power supplies, and solenoid/relay drivers requiring stable component supply and long-term production continuity.

Supply support for IPD055N08NF2SATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive ICs, and industrial control solutions, with over 30 years of MOSFET innovation.

This device belongs to the StrongIRFET™ 2 family-designed specifically for high-current, high-frequency switching in 24–80 V industrial and transportation systems where low RDS(on) and rugged avalanche performance are mandatory.

FAQ

What is the maximum safe operating temperature for IPD055N08NF2SATMA1?

The junction temperature must not exceed 175 °C under any condition. With RthJC = 1.4 °C/W and typical PCB cooling (RthJA = 50 °C/W), sustained 98 A operation requires case temperature ≤ 105 °C. Derating curves in Figure 2 confirm 57 A maximum at TC = 100 °C for VGS = 6 V drive.

Does IPD055N08NF2SATMA1 require a gate resistor for stability?

Yes-a 1.6 Ω external gate resistor is recommended per datasheet switching characterization (Table 5). This value balances turn-on speed (14 ns delay) and overshoot suppression, especially when driving from low-impedance sources like UCC27531 or TC4427 gate drivers.

Can IPD055N08NF2SATMA1 replace older IPD055N08N in existing designs?

Yes-IPD055N08NF2SATMA1 is a direct drop-in replacement for IPD055N08N with identical pinout, package, and voltage rating. It improves RDS(on) from 6.1 mΩ to 5.5 mΩ and reduces Qg from 40 nC to 36 nC, yielding measurable efficiency gains without layout changes.

Is the body diode suitable for synchronous rectification?

Yes-the body diode has characterized Qrr = 154 nC and trr = 30 ns at 500 A/µs, enabling use in synchronous buck topologies up to 500 kHz. However, for >1 MHz operation or ultra-low EMI targets, a discrete Schottky or GaN FET may be preferred due to lower stored charge.

IPD055N08NF2SATMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
StrongIRFET™ 2
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
80 V
Current - Continuous Drain (Id) @ 25°C:
17A (Ta), 98A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Rds On (Max) @ Id, Vgs:
5.5mOhm @ 60A, 10V
Vgs(th) (Max) @ Id:
3.8V @ 55µA
Gate Charge (Qg) (Max) @ Vgs:
54 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2500 pF @ 40 V
FET Feature:
-
Power Dissipation (Max):
3W (Ta), 107W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TO252-3

IPD055N08NF2SATMA1 FAQ

1.How can I place an order for IPD055N08NF2SATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD055N08NF2SATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD055N08NF2SATMA1 reliable?

The price and inventory of IPD055N08NF2SATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD055N08NF2SATMA1 is usually 5 days.

3.What payment methods are accepted for IPD055N08NF2SATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD055N08NF2SATMA1 transactions.

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IPD055N08NF2SATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD055N08NF2SATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD055N08NF2SATMA1?

For technical support, including IPD055N08NF2SATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD055N08NF2SATMA1 requirements.

6.How does Aetrix verify that IPD055N08NF2SATMA1 is sourced from the original manufacturer or authorized distributors?

All IPD055N08NF2SATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD055N08NF2SATMA1 meets industry standards.

7.What is the process for return or replacement of IPD055N08NF2SATMA1?

All IPD055N08NF2SATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD055N08NF2SATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD055N08NF2SATMA1 part is unused and in its original packaging.

Return procedure for IPD055N08NF2SATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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