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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD06P004NATMA1

Name: IPD06P004NATMA1
Brand: Infineon Technologies
SKU: IPD06P004NATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD06P004NATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD06P004NATMA1.pdf

Description:: MOSFET P-CH 60V 16.4A TO252-3

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Product details

Overview

IPD06P004NATMA1 from Infineon Technologies is a P-channel enhancement-mode MOSFET rated for -60 V drain-source voltage, 90 mΩ maximum R_DS(on) at V_GS = -10 V and I_D = -16.4 A, and qualified for industrial applications. It features 100% avalanche testing, halogen-free construction per IEC61249-2-21, and Pb-free RoHS-compliant plating. It serves as a high-efficiency power switch in DC-DC converters and motor control H-bridge high-side configurations.

For engineers reviewing the IPD06P004NATMA1 datasheet, IPD06P004NATMA1 pinout, IPD06P004NATMA1 application, or IPD06P004NATMA1 equivalent, key selection criteria include verified -60 V blocking capability, low gate charge (Q_g = 27 nC), fast switching (t_d(off) = 25 ns), and thermal resistance R_thJC = 2.4 °C/W for PCB-mounted thermal management.

Technical Context

This OptiMOSTM device operates in enhancement mode with a gate threshold voltage of -2.1 to -4 V and exhibits stable R_DS(on) over temperature (normalized to 25 °C up to 175 °C). Its reverse diode supports -16 A continuous forward current with V_SD = -0.9 to -1.2 V at -16.4 A and T_j = 25 °C.

The MOSFET delivers 209 mJ single-pulse avalanche energy at I_D = -16.4 A and R_GS = 25 Ω, and its dynamic parameters-C_iss = 1100 pF, C_oss = 160 pF, C_rss = 39 pF-are optimized for high-frequency switching in synchronous rectification and load-switching topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-60 V - Maximum drain-source blocking voltage under reverse bias, enabling use in 48 V industrial bus systems.
R_DS(on), max	90 mΩ at V_GS = -10 V, I_D = -16.4 A - Low conduction loss for <1.5 W dissipation at full rated current.
I_D, cont	-16.4 A at T_C = 25 °C - Continuous drain current rating defining safe steady-state operation on adequately cooled PCBs.
E_AS	209 mJ - Single-pulse avalanche energy capacity supporting robustness against inductive switching transients.
Q_g	27 nC - Total gate charge determining drive strength requirement and switching loss in PWM circuits.
R_thJC	2.4 °C/W - Junction-to-case thermal resistance measured on 6 cm² copper area, critical for heatsink interface design.
t_d(off)	25 ns - Turn-off delay time at V_DD = -30 V, defining minimum dead-time setting in half-bridge drivers.

Pinout & Package

IPD06P004NATMA1 uses the PG-TO252-3 (D-PAK) package with exposed drain tab for thermal and electrical connection. The drain tab is soldered directly to PCB copper for low-inductance, high-current paths and enhanced thermal transfer.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Receives negative gate drive voltage (-10 V typical) to fully enhance channel; requires low-impedance driver due to Q_g = 27 nC.
Pin 2 (Drain tab)	Main current path output	Exposed metal tab electrically and thermally connected to drain; must be soldered to ≥6 cm² copper pour for rated power dissipation.
Pin 3 (Source)	Reference node	Common return for gate drive and load current; defines local ground reference for high-side switching configuration.

Key Features

Feature	Design Value
P-Channel enhancement mode	Enables high-side switching without level-shifting circuitry in 12–48 V systems.
100% avalanche tested	Guarantees ruggedness against unclamped inductive turn-off events in motor drives and solenoid controls.
Halogen-free & RoHS compliant	Meets IEC61249-2-21 and EU RoHS Directive 2011/65/EU for environmentally regulated industrial deployments.
Optimized gate charge profile	Q_gd/Q_g ratio of ~41% reduces Miller-induced shoot-through risk in bridge configurations.
Low R_DS(on) temperature coefficient	R_DS(on) increases only ~1.8× from 25 °C to 175 °C, supporting stable current sharing in parallel operation.

Applications

Industrial DC-DC Converters

Automotive Body Control Modules

Use Scenario: Synchronous buck converter in 24 V industrial power supply delivering 15 A output.

IC Role / Device Role / Timing Role: High-side P-channel MOSFET operating at 250 kHz with gate driven by integrated controller.

Use Value: 90 mΩ R_DS(on) limits conduction loss to ≤2.2 W at full load, improving efficiency over 95% at mid-load.

Use Scenario: Reverse polarity protection and load switching in vehicle door module power distribution.

IC Role / Device Role / Timing Role: Always-on high-side switch controlling 12 V supply to window lift motors and mirror actuators.

Use Value: -60 V V_DS withstands load-dump transients up to +35 V and negative spikes to -60 V per ISO 7637-2.

Motor Drive H-Bridge Legs

Hot-Swap Power Controllers

Use Scenario: Upper quadrant switch in brushed DC motor H-bridge driving 24 V, 10 A loads.

IC Role / Device Role / Timing Role: High-side P-MOSFET commutated with complementary N-MOSFET using bootstrap or isolated gate drive.

Use Value: 209 mJ E_AS absorbs flyback energy during rapid direction reversal without external snubbers.

Use Scenario: Inrush-limited hot-swap controller for redundant 48 V telecom power feeds.

IC Role / Device Role / Timing Role: Main pass element controlled by dedicated hot-swap IC to limit dI/dt during insertion.

Use Value: Low Q_g (27 nC) enables precise gate slew-rate control, limiting peak inrush to <30 A with <500 µs rise time.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF4905PBF	R_DS(on) = 20 mΩ higher (110 mΩ), Q_g = 71 nC - 2.6× larger gate drive demand	Lower switching frequency ceiling due to higher C_iss (1800 pF) and slower t_d(off) (60 ns)	Preferable only where cost sensitivity outweighs efficiency and thermal constraints.
STP60P06	V_DS = -60 V same, but R_DS(on) = 110 mΩ and E_AS not specified in datasheet	Lacks documented avalanche rating; unsuitable for inductive load switching without external clamping	Select only for non-inductive, low-dI/dt applications such as static load switching.

Compared with IRF4905PBF and STP60P06, IPD06P004NATMA1 offers superior switching efficiency (lower Q_g, faster t_d(off)) and guaranteed avalanche ruggedness-critical for motor control and hot-swap designs where transient immunity and thermal headroom are prioritized.

Availability

IPD06P004NATMA1 is available at Aetrix Electronics and suitable for industrial DC-DC converters, automotive body control modules, and motor drive H-bridge legs requiring stable component supply and long-term lifecycle support.

Supply support for IPD06P004NATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

IPD06P004NATMA1 belongs to the OptiMOSTM family-designed specifically for high-efficiency, high-reliability power switching in industrial and automotive environments where low R_DS(on), robust avalanche performance, and thermal stability are essential.

FAQ

What is the maximum junction temperature and how is it validated?

The IPD06P004NATMA1 has a maximum junction temperature of 175 °C, validated per JEDEC JESD22-A108 and qualified for industrial applications under JEDEC47/20/22 test conditions. Thermal derating curves in the datasheet confirm continuous operation up to this limit when R_thJC = 2.4 °C/W is maintained via proper PCB copper layout.

Does this MOSFET require a gate resistor, and if so, what value is recommended?

A gate resistor is required to dampen ringing and control switching speed. For typical 250 kHz operation with a 1 A peak gate driver, a 10 Ω series resistor is recommended-balancing t_d(on)/t_d(off) (≈9 ns / 25 ns) while limiting peak gate current to <1 A during V_GS transitions.

Can IPD06P004NATMA1 be used in parallel configurations?

Yes-its positive R_DS(on) temperature coefficient ensures inherent current sharing. Parallel operation is supported with matched gate drive routing and symmetrical PCB thermal layout; derating to 80% of total rated current per device is advised for reliability at T_C > 100 °C.

Is the drain tab electrically isolated from the package body?

No-the drain tab is electrically connected to the drain terminal (Pin 2) and forms the primary current and thermal path. It must be soldered to a PCB copper plane designated as the drain net; isolation requires insulating thermal pads or dielectric substrates if mounting to a heatsink.

IPD06P004NATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Discontinued at Digi-Key

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 16.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 90mOhm @ 16.4A, 10V

Vgs(th) (Max) @ Id:: 4V @ 710µA

Gate Charge (Qg) (Max) @ Vgs:: 27 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1100 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 63W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3

IPD06P004NATMA1 FAQ

1.How can I place an order for IPD06P004NATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD06P004NATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD06P004NATMA1 reliable?

The price and inventory of IPD06P004NATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD06P004NATMA1 is usually 5 days.

3.What payment methods are accepted for IPD06P004NATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD06P004NATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD06P004NATMA1?

IPD06P004NATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD06P004NATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD06P004NATMA1?

For technical support, including IPD06P004NATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD06P004NATMA1 requirements.

6.How does Aetrix verify that IPD06P004NATMA1 is sourced from the original manufacturer or authorized distributors?

All IPD06P004NATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD06P004NATMA1 meets industry standards.

7.What is the process for return or replacement of IPD06P004NATMA1?

All IPD06P004NATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD06P004NATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD06P004NATMA1 part is unused and in its original packaging.

Return procedure for IPD06P004NATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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