Infineon Technologies IPD096N08N3GATMA1

Overview

IPD096N08N3GATMA1 from Infineon Technologies is an N-channel enhancement-mode MOSFET optimized for high-frequency DC/DC converters, featuring 80 V V_DS, 9.6 mΩ R_DS(on) max at V_GS = 10 V, and 73 A continuous drain current at T_C = 25 °C; used in synchronous buck stages of server VRMs and telecom power supplies.

For engineers reviewing the IPD096N08N3GATMA1 datasheet, IPD096N08N3GATMA1 pinout, IPD096N08N3GATMA1 application, or IPD096N08N3GATMA1 equivalent, key selection criteria include gate charge × R_DS(on) figure-of-merit (FOM), avalanche ruggedness (90 mJ single-pulse), thermal resistance (1.5 K/W j–c), and PG-TO252-3 package compatibility with high-current PCB layouts.

Technical Context

This device implements a trench-based OptiMOS™3 process for low conduction and switching losses. Its gate threshold voltage (2.0–3.5 V) enables standard 5 V or 10 V gate drive, while its 26–35 nC total gate charge supports efficient operation at 300–1000 kHz switching frequencies in hard-switched topologies.

The integrated body diode exhibits 57 ns reverse recovery time and 91 nC Q_rr, enabling use in synchronous rectification without external Schottky replacement in medium-power applications. Thermal design is anchored to a 1.5 K/W junction-to-case resistance under defined PCB mounting conditions.

Key Specifications

Pinout & Package

IPD096N08N3GATMA1 is housed in a PG-TO252-3 (DPAK) surface-mount package with exposed drain pad for thermal and electrical connection. The package complies with RoHS and halogen-free standards per IEC61249-2-21.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRF1404ZPBF and STL110N8F7, IPD096N08N3GATMA1 uniquely balances 80 V rating, 9.6 mΩ on-resistance, and 26–35 nC gate charge in a thermally optimized DPAK package-making it optimal for 48 V intermediate bus converters demanding high efficiency at 500–1000 kHz.

Availability

IPD096N08N3GATMA1 is available at Aetrix Electronics and suitable for server VRMs, telecom DC/DC converters, and industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for IPD096N08N3GATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the OptiMOS™3 power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC/DC conversion in data center, telecom, and industrial power systems.

FAQ

What is the maximum recommended gate drive voltage for IPD096N08N3GATMA1?

The absolute maximum gate-source voltage is ±20 V, but the device is characterized and optimized for 10 V drive. Using 10 V ensures full enhancement with minimal R_DS(on) (7.9 mΩ typ.), while 6 V drive yields higher on-resistance (10.5–17.8 mΩ) and increased conduction loss. Gate drive above 12 V provides diminishing returns and risks accelerated gate oxide stress over lifetime.

Does IPD096N08N3GATMA1 include an integrated Schottky diode?

No. It features a monolithic silicon body diode inherent to the MOSFET structure-not a discrete Schottky. This diode has 57 ns reverse recovery time and 91 nC Q_rr, which is enhanced versus standard planar MOSFETs but not equivalent to a dedicated Schottky. For ultra-low Q_rr, external Schottky placement remains necessary in critical high-frequency synchronous rectification.

Can IPD096N08N3GATMA1 be used in linear mode (as a pass transistor)?

No. It is not rated or characterized for linear (SOA-limited) operation. The Safe Operating Area curve shows significant derating above 10 V V_DS at high currents, and its SOA is defined only for pulsed conditions. Continuous linear operation risks thermal runaway due to positive temperature coefficient of R_DS(on) and insufficient SOA margin at elevated V_DS.

Is the PG-TO252-3 package lead-free and RoHS compliant?

Yes. IPD096N08N3GATMA1 uses Pb-free plating and meets RoHS Directive 2011/65/EU requirements. It is also halogen-free per IEC61249-2-21, with chlorine and bromine content below 900 ppm each. The "ATMA1" suffix confirms tape-and-reel packaging compliant with JEDEC J-STD-020 moisture sensitivity level 1.