Infineon Technologies IPD130N10NF2SATMA1

Overview

IPD130N10NF2SATMA1 from Infineon Technologies is an N-channel enhancement-mode MOSFET in DPAK (PG-TO252-3) package, rated for 100 V drain-source voltage, 13.0 mΩ max R_DS(on) at V_GS = 10 V, and 52 A continuous drain current at T_C = 25 °C. It serves as a high-efficiency power switch in DC-DC converters, motor drives, and industrial power supplies.

For engineers reviewing the IPD130N10NF2SATMA1 datasheet, IPD130N10NF2SATMA1 pinout, IPD130N10NF2SATMA1 application, or IPD130N10NF2SATMA1 equivalent, key selection criteria include its 18.6 nC total gate charge, 26 nC output charge, 100% avalanche-tested ruggedness, RoHS-compliant Pb-free plating, and thermal resistance of 2.1 °C/W (junction-to-case).

Technical Context

This StrongIRFET™ 2 device uses trench-gate silicon technology optimized for low conduction and switching losses in hard-switched topologies. Its gate threshold voltage (2.2–3.8 V) enables robust drive with standard 5 V or 10 V logic-level controllers, while its 4.9 V gate plateau supports stable Miller region control during turn-on.

The integrated body diode exhibits 0.92–1.2 V forward voltage at 30 A and 26 ns reverse recovery time under 500 A/µs di/dt - enabling use in synchronous rectification and freewheeling paths without external diodes in many medium-frequency applications.

Key Specifications

Pinout & Package

IPD130N10NF2SATMA1 is housed in PG-TO252-3 (DPAK) package with exposed drain tab for thermal performance. Pin 1 = Gate, Pin 2 = Drain (tab-connected), Pin 3 = Source.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP130N10F7 and IRF130N10L, IPD130N10NF2SATMA1 delivers optimal balance of low R_DS(on), moderate Q_G, and guaranteed avalanche ruggedness in surface-mount DPAK - making it preferred for space-constrained, reliability-critical industrial and automotive power stages.

Availability

IPD130N10NF2SATMA1 is available at Aetrix Electronics and suitable for motor drives, industrial DC-DC converters, and automotive body control modules requiring stable component supply and long-term lifecycle support.

Supply support for IPD130N10NF2SATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q101 standards.

This device belongs to the StrongIRFET™ 2 family - engineered specifically for high-current, medium-voltage switching in industrial motor control, server power supplies, and EV auxiliary systems where thermal robustness and avalanche tolerance are mandatory.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The maximum continuous drain current is 37 A at T_C = 100 °C and V_GS = 10 V, as specified in Table 2 of the datasheet. This reflects thermal de-rating due to reduced channel mobility and increased R_DS(on) at elevated temperatures - design must ensure heatsinking maintains T_C ≤ 100 °C for sustained 37 A operation.

Is IPD130N10NF2SATMA1 suitable for synchronous rectification?

Yes - its integrated body diode has 0.92 V forward voltage at 30 A and 26 ns reverse recovery time, validated for synchronous rectification in 100–300 kHz DC-DC converters. However, external gate control is required to actively commutate the body diode; the device itself does not include integrated driver or control logic.

Does this MOSFET require a gate resistor for stability?

A gate resistor (typically 1.6 Ω, per datasheet switching characterization) is recommended to dampen ringing caused by gate loop inductance and prevent spurious turn-on from dv/dt coupling. The 0.9 Ω typical gate resistance (R_G) means external series resistance directly controls turn-on/turn-off speed and EMI profile.

What is the thermal resistance from junction to ambient under standard PCB conditions?

Under JEDEC-standard conditions (40 mm × 40 mm × 1.5 mm FR4 PCB with 6 cm² copper area for drain), R_thJA is 50 °C/W. With minimal footprint (no added copper), it rises to 75 °C/W - so thermal design must specify copper area and airflow to achieve target T_J < 175 °C at full load.