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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD135N08N3GATMA1

Name: IPD135N08N3GATMA1
Brand: Infineon Technologies
SKU: IPD135N08N3GATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD135N08N3GATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD135N08N3GATMA1.pdf

Description:: MOSFET N-CH 80V 45A TO252-3

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Product details

Overview

IPD135N08N3GATMA1 from Infineon Technologies is an N-channel enhancement-mode MOSFET optimized for high-frequency DC/DC converters, featuring 80 V V_DS, 13.5 mΩ R_DS(on) max at V_GS = 10 V and 45 A continuous drain current at T_C = 25 °C; used in synchronous buck stages of server VRMs and telecom POL modules.

For engineers reviewing the IPD135N08N3GATMA1 datasheet, IPD135N08N3GATMA1 pinout, IPD135N08N3GATMA1 application, or IPD135N08N3GATMA1 equivalent, key selection criteria include gate charge (Q_g = 19–25 nC), FOM (Q_g × R_DS(on)), avalanche ruggedness (E_AS = 50 mJ), thermal resistance (R_thJC = 1.9 K/W), and diode recovery performance (Q_rr = 74 nC).

Technical Context

This OptiMOS™3 device employs trench-gate superjunction technology to minimize conduction and switching losses simultaneously. Its low Q_gd/Q_gs ratio (≈0.57) and 5.5 V gate plateau voltage support clean, fast turn-on with reduced Miller-induced shoot-through risk in half-bridge configurations.

The integrated body diode is characterized for hard commutation with t_rr = 50 ns and soft recovery behavior (Q_rr = 74 nC), enabling reliable operation in synchronous rectification without external Schottky supplementation in 48 V input POLs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - supports 48 V nominal bus systems with 20 % overvoltage margin
R_DS(on) max	13.5 mΩ @ V_GS = 10 V - enables ≤1.5 W conduction loss at 45 A in TO-252 footprint
Q_g	19–25 nC - determines gate drive power and switching speed in 300–1000 kHz converters
E_AS	50 mJ - ensures single-pulse avalanche survivability during load dump or inductive turn-off
R_thJC	1.9 K/W - allows 79 W power dissipation with ≤150 K junction-to-case temperature rise
Q_rr	74 nC - quantifies reverse recovery charge affecting cross-conduction loss in synchronous FETs
t_r/t_f	35 ns / 5 ns - enables fast edge control with minimal switching energy penalty

Pinout & Package

IPD135N08N3GATMA1 is housed in PG-TO-252-3 (DPAK) package with exposed drain pad for thermal enhancement. The case outline conforms to JEDEC MO-238, and the lead finish is Pb-free per RoHS.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Power return path for channel current	Connected to low-side switch node or ground plane; carries full load current
Pin 2 (Gate)	Control electrode for channel modulation	High-impedance input requiring <5 V threshold; sensitive to ESD and ringing
Pin 3 (Drain)	Main current-carrying terminal (exposed pad)	Electrically and thermally connected to PCB copper area; handles 80 V blocking and 45 A conduction

Key Features

Feature	Design Value
Optimized Q_g × R_DS(on) FOM	255–340 mΩ·nC - balances switching and conduction loss in 500 kHz+ DC/DC designs
100 % avalanche tested	Guarantees single-pulse ruggedness up to 50 mJ without derating or screening exceptions
Low Q_gd/Q_gs ratio	0.57 - reduces Miller feedback effect and improves gate drive stability in hard-switched bridges
Halogen-free construction	Complies with IEC61249-2-21 - meets environmental requirements for industrial and telecom equipment
JEDEC-qualified reliability	Validated per J-STD-20 and JESD22 - supports long-term deployment in base station and server applications

Applications

Server Voltage Regulator Modules

Telecom Point-of-Load Converters

Use Scenario: High-current, multi-phase buck regulators supplying CPU/GPU core rails in 1U servers.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in interleaved 3–6 phase topology operating at 600–800 kHz.

Use Value: 13.5 mΩ R_DS(on) and 74 nC Q_rr reduce conduction + recovery losses by ≥12 % vs. legacy 20 mΩ MOSFETs at 45 A.

Use Scenario: 48 V to 3.3 V/12 V POL conversion in packet-optical line cards with strict thermal limits.

IC Role / Device Role / Timing Role: Primary switching FET in fixed-frequency synchronous buck with 1.9 K/W R_thJC enabling compact heatsinkless layout.

Use Value: 1.9 K/W thermal resistance allows full 45 A rating on 6 cm² PCB copper, eliminating need for external thermal vias.

Industrial Motor Drive Half-Bridges

Automotive DC/DC Converters

Use Scenario: 24 V input H-bridge inverters for BLDC fan control in HVAC and factory automation.

IC Role / Device Role / Timing Role: High-side and low-side switch in 20–100 kHz PWM-driven half-bridge with bootstrap gate drive.

Use Value: 5.5 V gate plateau and 2.8 V typical V_GS(th) ensure robust turn-on margin under V_BS droop and temperature variation.

Use Scenario: 12 V/24 V bidirectional DC/DC in 48 V mild-hybrid vehicle architectures.

IC Role / Device Role / Timing Role: Isolation-side primary switch in dual-active-bridge topology with 50 ns t_rr enabling ZVS-assisted soft switching.

Use Value: 50 ns reverse recovery time and soft Q_rr profile reduce dead-time sensitivity and improve ZVS window consistency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL135N8LH6AG	R_DS(on) = 12.5 mΩ @ 10 V; Q_g = 27 nC; no avalanche rating published	Lacks guaranteed E_AS spec; requires external clamping in inductive loads	Preferable where lower R_DS(on) dominates and avalanche stress is absent
IXTP135N08X4	R_DS(on) = 13.0 mΩ @ 10 V; Q_g = 32 nC; TO-220 package; higher R_thJC (2.5 K/W)	Larger footprint and inferior thermal performance; unsuitable for space-constrained DPAK layouts	Only suitable when through-hole mounting and higher gate drive capability are available

Compared with STL135N8LH6AG and IXTP135N08X4, IPD135N08N3GATMA1 delivers the best combination of avalanche ruggedness, thermal efficiency in surface-mount form factor, and gate drive efficiency-critical for high-reliability, high-density DC/DC converter designs.

Availability

IPD135N08N3GATMA1 is available at Aetrix Electronics and suitable for server VRMs, telecom POL converters, industrial motor drives, and automotive DC/DC systems requiring stable component supply across extended production lifecycles.

Supply support for IPD135N08N3GATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and industrial sensors, with global manufacturing and qualification infrastructure.

This device belongs to the OptiMOS™3 product line, engineered specifically for high-efficiency, high-frequency power conversion in data center, telecom, and industrial applications where low R_DS(on), fast switching, and ruggedness are co-optimized.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The absolute maximum junction temperature is 175 °C, and the device is rated for continuous operation up to this limit when thermal design maintains T_j ≤ 175 °C under worst-case ambient and power dissipation conditions. Derating curves in the datasheet define safe operating area boundaries at elevated temperatures.

Is IPD135N08N3GATMA1 suitable for linear-mode (saturation) operation?

No-it is optimized for switching-mode operation only. Its Safe Operating Area (SOA) curve shows limited linear-region capability, and sustained operation in the linear region risks thermal runaway due to positive temperature coefficient of R_DS(on) and insufficient SOA margin at high V_DS/I_D combinations.

Does the body diode support synchronous rectification without external components?

Yes-the integrated body diode is fully characterized for synchronous rectification with t_rr = 50 ns and Q_rr = 74 nC, enabling direct use in synchronous buck topologies without external Schottky diodes, provided gate timing accounts for its recovery behavior.

What is the recommended gate resistor value for 600 kHz operation?

A 1.6 Ω external gate resistor is validated in the datasheet for 600 kHz switching with V_DD = 40 V and I_D = 45 A, yielding t_r = 35 ns and t_f = 5 ns. Lower values increase dV/dt stress; higher values raise switching losses and may compromise Miller immunity.

IPD135N08N3GATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 45A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 13.5mOhm @ 45A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 33µA

Gate Charge (Qg) (Max) @ Vgs:: 25 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1730 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 79W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3

IPD135N08N3GATMA1 FAQ

1.How can I place an order for IPD135N08N3GATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD135N08N3GATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD135N08N3GATMA1 reliable?

The price and inventory of IPD135N08N3GATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD135N08N3GATMA1 is usually 5 days.

3.What payment methods are accepted for IPD135N08N3GATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD135N08N3GATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD135N08N3GATMA1?

IPD135N08N3GATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD135N08N3GATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD135N08N3GATMA1?

For technical support, including IPD135N08N3GATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD135N08N3GATMA1 requirements.

6.How does Aetrix verify that IPD135N08N3GATMA1 is sourced from the original manufacturer or authorized distributors?

All IPD135N08N3GATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD135N08N3GATMA1 meets industry standards.

7.What is the process for return or replacement of IPD135N08N3GATMA1?

All IPD135N08N3GATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD135N08N3GATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD135N08N3GATMA1 part is unused and in its original packaging.

Return procedure for IPD135N08N3GATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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