Infineon Technologies IPD15N06S2L64ATMA2

Overview

IPD15N06S2L64ATMA2 from Infineon Technologies is an N-channel logic-level enhancement-mode MOSFET optimized for automotive and industrial switching applications. It features a 55 V V_DS, 64 mΩ max R_DS(on) at V_GS = 10 V and I_D = 13 A, 175 °C maximum junction temperature, AEC-Q101 qualification, and PG-TO252-3-11 surface-mount package. It delivers high-current capability (19 A continuous at T_C = 25 °C) in compact power conversion stages such as DC-DC converters and motor drivers.

For engineers reviewing the IPD15N06S2L64ATMA2 datasheet, IPD15N06S2L64ATMA2 pinout, IPD15N06S2L64ATMA2 application, or IPD15N06S2L64ATMA2 equivalent, key selection criteria include its logic-level gate drive compatibility (V_GS(th) = 1.2–2.0 V), ultra-low R_DS(on), 100% avalanche-tested ruggedness, and thermal performance with R_thJC = 3.2 K/W - critical for high-reliability 12 V/24 V automotive loads and industrial SMPS designs.

Technical Context

This OptiMOS® device uses trench-gate superjunction technology to achieve low conduction losses while maintaining fast switching characteristics. Its gate threshold voltage range (1.2–2.0 V) ensures reliable turn-on with standard 3.3 V or 5 V logic controllers, and its 38 pF reverse transfer capacitance (C_rss) supports efficient high-frequency operation up to several hundred kHz.

The integrated body diode exhibits low forward voltage (V_SD = 0.93–1.3 V at I_F = 15 A, T_j = 25 °C) and fast recovery (t_rr = 34 ns, Q_rr = 32 nC), enabling use in synchronous rectification and freewheeling paths without external diodes in many topologies.

Key Specifications

Pinout & Package

IPD15N06S2L64ATMA2 is housed in a PG-TO252-3-11 (DPAK) thermally enhanced surface-mount package with exposed drain pad for optimal heat dissipation. The package complies with MSL1 rating (peak reflow ≤ 260 °C) and is lead-free (RoHS-compliant).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Compared with STP16NF06L and IRLR7843, IPD15N06S2L64ATMA2 uniquely combines AEC-Q101 certification, 55 V rating with 64 mΩ R_DS(on), and 175 °C operation - making it the only viable choice for thermally demanding, safety-critical automotive power switching where long-term reliability is mandated.

Availability

IPD15N06S2L64ATMA2 is available at Aetrix Electronics and suitable for automotive body electronics, industrial DC-DC power supplies, and BLDC motor control systems requiring stable component supply across multi-year production lifecycles.

Supply support for IPD15N06S2L64ATMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS® 2nd generation logic-level power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in automotive and industrial 12 V/24 V/48 V power systems.

FAQ

What is the maximum allowable gate-source voltage for IPD15N06S2L64ATMA2?

The absolute maximum gate-source voltage is ±20 V. Operation beyond this risks permanent gate oxide damage. For reliable logic-level drive, keep V_GS between 4.5 V and 10 V - where R_DS(on) is fully specified (61–85 mΩ at 4.5 V; 47–64 mΩ at 10 V) and gate charge remains low (Q_g = 11–13 nC).

Does IPD15N06S2L64ATMA2 require a gate resistor in typical applications?

Yes - a series gate resistor (typically 10–47 Ω) is recommended to dampen ringing caused by gate-drain capacitance (C_rss = 38 pF) and PCB inductance. This prevents false turn-on during fast dV/dt events and controls switching speed to balance EMI and efficiency in PWM applications.

Can IPD15N06S2L64ATMA2 be used in high-side switching configurations?

It can be used in high-side configuration only with a gate driver capable of providing V_GS ≥ 10 V referenced to the source (e.g., bootstrap or isolated driver). Its logic-level threshold does not eliminate the need for level-shifting in high-side topology - the source potential floats above ground, requiring gate voltage > V_DS + V_GS(th) for full enhancement.

Is the body diode suitable for continuous freewheeling in synchronous rectification?

Yes - the integrated body diode is rated for 19 A continuous forward current (I_S) and exhibits low V_SD (0.93–1.3 V) and fast t_rr (34 ns). However, for highest efficiency in high-frequency synchronous rectification, an external Schottky diode or complementary MOSFET is preferred due to lower forward drop and zero reverse recovery charge.